Simulation Study on 6.5 kV SiC Trench Gate p-Channel Superjunction Insulated Gate Bipolar Transistor [PDF]
MicromachinesThis paper investigates 6.5 kV SiC trench gate p-channel IGBTs using Sentaurus TCAD simulations. The proposed superjunction structure is compared to conventional designs to highlight its advantages.
Kuan-Min Kang +2 more
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Optimalization of IGBT Communication
Advances in Electrical and Electronic Engineering, 2002 The paper presents IGBT switch off process in order to reduce power loss in the structure. The soft switching method using switch-off after current reduction is used.
Pavol Spanik +2 more
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Modelling and simulation of sinusoidal pulse width modulation controller for solar photovoltaic inverter to minimize the switching losses and improving the system efficiency [PDF]
Archives of Electrical Engineering, 2022 With the extinction of fossil fuels and high increase in power demand, the necessity for renewable energy power generation has increased globally. Solar PV is one such renewable energy power generation, widely used these days in the power sector.
Sivaraj Panneerselvam +2 more
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Deep learning network based lifetime analysis of energy - fed traction power supply converter [PDF]
MATEC Web of Conferences, 2022 This paper presents a life prediction method based on the parameters of the actual operation history data collected by the existing converter power unit sensors.
Li Zeshu, Xia Mingchao, Chen Qifang
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Research on Residual Life of IGBT Module on EMU in Advanced Repair Based on Power Cycles
Kongzhi Yu Xinxi Jishu, 2023 The insulated gate bipolar transistor (IGBT) module is one of the weakest links in the traction converter system. Accurate life and reliability assessment of the IGBT module is particularly important for safe operation of the traction converter system ...
JIANG Jie, LI Nan
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Xi'an Gongcheng Daxue xuebao, 2023 The thermal management problem of IGBT is becoming more and more prominent, and it is urgent to develop a new cooling technology with high efficiency, stability and flexibility.
WU Xilei +6 more
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Comparative study of electro‐thermal characteristics of 4500 V diffusion‐CS IGBT and buried‐CS IGBT
IET Circuits, Devices and Systems, 2021 This article compares the major characteristics of the Insulated Gate Bipolar Transistor with Diffusion Carrier Stored (CS) layer (DCS‐IGBT) and the Insulated Gate Bipolar Transistor with the Buried CS layer (BCS‐IGBT).
Rui Jin +6 more
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Application of the Averaged Model of the Diode transistorSwitch for Modelling Characteristics of a Boost Converter with an IGBT [PDF]
International Journal of Electronics and Telecommunications, 2020 DC-DC converters are popular switch-mode electronic circuits used in power supply systems of many electronic devices. Designing such converters requires reliable computation methods and models of components contained in these converters, allowing for ...
Paweł Górecki
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A Control Strategy of IGBT Junction Temperature for Electric Vehicle during Start-up Process
Kongzhi Yu Xinxi Jishu, 2023 In the start-up process of electric vehicles, due to low output current frequency of controller, junction temperature fluctuates seriously when output torque is full, which is easy to cause the IGBT chip to have too high junction temperature, and will ...
LIU Peng +5 more
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HVDC Transmission Systems based Multi-level Voltage Source Converters for Iraqi Super Grid [PDF]
Engineering and Technology Journal, 2014 High Voltage Direct Current Transmission (HVDC) with Voltage Source Converter (VSC) technology provides substantial technical and economical advantages for different applications compared to conventional HVDC transmission systems based on thyristor ...
Adil Hameed Ahmed +1 more
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