Results 1 to 10 of about 13,106 (216)
Comparative study of electro‐thermal characteristics of 4500 V diffusion‐CS IGBT and buried‐CS IGBT
IET Circuits, Devices and Systems, 2021 This article compares the major characteristics of the Insulated Gate Bipolar Transistor with Diffusion Carrier Stored (CS) layer (DCS‐IGBT) and the Insulated Gate Bipolar Transistor with the Buried CS layer (BCS‐IGBT).
Rui Jin +6 more
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Simulation Study on 6.5 kV SiC Trench Gate p-Channel Superjunction Insulated Gate Bipolar Transistor [PDF]
MicromachinesThis paper investigates 6.5 kV SiC trench gate p-channel IGBTs using Sentaurus TCAD simulations. The proposed superjunction structure is compared to conventional designs to highlight its advantages.
Kuan-Min Kang +2 more
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IET Power Electronics, 2018 Recent progress in insulated gate bipolar transistor (IGBT) development is reviewed. Highlighted issues range from technological aspects such as special processes suitable for thin‐wafer‐processing, through the advanced cell and vertical concepts to approaches for improved IGBT ruggedness.
Franz‐Josef Niedernostheide +3 more
exaly +2 more sources
Research on Residual Life of IGBT Module on EMU in Advanced Repair Based on Power Cycles
Kongzhi Yu Xinxi Jishu, 2023 The insulated gate bipolar transistor (IGBT) module is one of the weakest links in the traction converter system. Accurate life and reliability assessment of the IGBT module is particularly important for safe operation of the traction converter system ...
JIANG Jie, LI Nan
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Xi'an Gongcheng Daxue xuebao, 2023 The thermal management problem of IGBT is becoming more and more prominent, and it is urgent to develop a new cooling technology with high efficiency, stability and flexibility.
WU Xilei +6 more
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Micromachines, 2023 A novel snapback-free superjunction reverse-conducting insulated gate bipolar transistor (SJ-RC-IGBT) is proposed and verified by simulation. In the SJ-RC-IGBT, the parasitic P/N/P/N structure as thyristor or Shockley diode demonstrates large ...
Zhigang Wang, Chong Yang, Xiaobing Huang
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Deep learning network based lifetime analysis of energy - fed traction power supply converter [PDF]
MATEC Web of Conferences, 2022 This paper presents a life prediction method based on the parameters of the actual operation history data collected by the existing converter power unit sensors.
Li Zeshu, Xia Mingchao, Chen Qifang
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Research on the Gate Oxide Layer Aging Trend of Power Electronic Device
IEEE Access, 2021 The introduction of fully electric vehicles (FEVs) into the mainstream has raised concerns about the reliability of their electronic components such as Insulated Gate Bipolar Translator (IGBT).
Guoqing Xu +4 more
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Low Switching Loss Built-In Diode of High-Voltage RC-IGBT with Shortened P+ Emitter
Micromachines, 2023 In this paper, a low switching loss built-in diode of a high-voltage reverse-conducting insulated gate bipolar transistor (RC-IGBT) is proposed without deteriorating IGBT characteristics.
Wei Wu +5 more
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Electrical engineering & Electromechanics, 2023 Introduction. Static converters are among the most widely used equipment in several applications, for example, electric power transmission, motor speed variation, photovoltaic panels, which constitute the electronic components.
S. Bechekir +5 more
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