Results 1 to 10 of about 2,236 (166)
Simulation Study on 6.5 kV SiC Trench Gate p-Channel Superjunction Insulated Gate Bipolar Transistor [PDF]
This paper investigates 6.5 kV SiC trench gate p-channel IGBTs using Sentaurus TCAD simulations. The proposed superjunction structure is compared to conventional designs to highlight its advantages.
Kuan-Min Kang +2 more
doaj +2 more sources
Recent progress in insulated gate bipolar transistor (IGBT) development is reviewed. Highlighted issues range from technological aspects such as special processes suitable for thin‐wafer‐processing, through the advanced cell and vertical concepts to approaches for improved IGBT ruggedness.
Franz‐Josef Niedernostheide +3 more
exaly +2 more sources
Optimalization of IGBT Communication
The paper presents IGBT switch off process in order to reduce power loss in the structure. The soft switching method using switch-off after current reduction is used.
Pavol Spanik +2 more
doaj +1 more source
Research on Residual Life of IGBT Module on EMU in Advanced Repair Based on Power Cycles
The insulated gate bipolar transistor (IGBT) module is one of the weakest links in the traction converter system. Accurate life and reliability assessment of the IGBT module is particularly important for safe operation of the traction converter system ...
JIANG Jie, LI Nan
doaj +3 more sources
The thermal management problem of IGBT is becoming more and more prominent, and it is urgent to develop a new cooling technology with high efficiency, stability and flexibility.
WU Xilei +6 more
doaj +1 more source
Comparative study of electro‐thermal characteristics of 4500 V diffusion‐CS IGBT and buried‐CS IGBT
This article compares the major characteristics of the Insulated Gate Bipolar Transistor with Diffusion Carrier Stored (CS) layer (DCS‐IGBT) and the Insulated Gate Bipolar Transistor with the Buried CS layer (BCS‐IGBT).
Rui Jin +6 more
doaj +1 more source
Deep learning network based lifetime analysis of energy - fed traction power supply converter [PDF]
This paper presents a life prediction method based on the parameters of the actual operation history data collected by the existing converter power unit sensors.
Li Zeshu, Xia Mingchao, Chen Qifang
doaj +1 more source
Introduction. Static converters are among the most widely used equipment in several applications, for example, electric power transmission, motor speed variation, photovoltaic panels, which constitute the electronic components.
S. Bechekir +5 more
doaj +1 more source
Experimental Modeling of Forward Recovery Characteristics of IGBT for DC Circuit Breaker
DC circuit breaker is the main means to clear the faults in VSC-HVDC power grid. Before action of the hybrid DC circuit breaker, the IGBT in the transfer branch is in a state of zero voltage and zero current.
Hong SHEN +4 more
doaj +1 more source
A novel snapback-free superjunction reverse-conducting insulated gate bipolar transistor (SJ-RC-IGBT) is proposed and verified by simulation. In the SJ-RC-IGBT, the parasitic P/N/P/N structure as thyristor or Shockley diode demonstrates large ...
Zhigang Wang, Chong Yang, Xiaobing Huang
doaj +1 more source

