HVDC Transmission Systems based Multi-level Voltage Source Converters for Iraqi Super Grid [PDF]
Engineering and Technology Journal, 2014 High Voltage Direct Current Transmission (HVDC) with Voltage Source Converter (VSC) technology provides substantial technical and economical advantages for different applications compared to conventional HVDC transmission systems based on thyristor ...
Adil Hameed Ahmed +1 more
doaj +1 more source
Thermo-mechanical stress of bonded wires used in high power modules with alternating and direct current modes [PDF]
, 2012 Today, power electronic reliability is a main subject of interest for many companies and laboratories. The main process leading to the IGBT failure is the cycling thermal stress.
Medjahed, Hassen +2 more
core +1 more source
Rückwärts leitfähiger IGBT mit nahezu von der Gate-Emitter-Spannung unabhängiger Diodencharakteristik [PDF]
, 2020 In dieser Dissertation wird ein neuartiges RC-IGBT-Konzept, bezeichnet als RC-GID-IGBT, vorgeschlagen. Diese neue RC-IGBT-Struktur ermöglicht den Betrieb mit einem konventionellen IGBT-Gate-Treiber und hat im Diodenmodus eine so geringe Reverse-Recovery ...
Tran, Quang Tien (gnd: 1231574690)
core +1 more source
A Temperature Dependent Lumped-charge Model for Trench FS-IGBT [PDF]
, 2018 This paper proposes a temperature dependent lumped-charge model for FS-IGBT. Due to the evolution of the IGBT structure, the existing lumped-charge IGBT model established for NPT-IGBT is not suitable for the simulation of FS-IGBT.
Francesco Iannuzzo +9 more
core +1 more source
Influence of Package Parasitic Parameters on Transient Current Distribution of Paralleled IGBT Chips
Zhongguo dianli, 2019 High power IGBT usually use multiple chips in parallel to achieve large current. The consistency of the dynamic and static current distribution of parallel chips is essential to improve the current level and reliability of devices.At first, the ...
Hao SHI +5 more
doaj +1 more source
Доклады Белорусского государственного университета информатики и радиоэлектроникиThis work presents the results of computer simulations of the operational characteristics of vertical channel Insulated Gate Bipolar Transistor (IGBT) device structures designed according to the following technologies: Trench-IGBT, Superjunction Trench ...
Trong Thanh Nguyen +3 more
doaj +1 more source
Comparative Study on Application of Hybrid SiC IGBT Device and Si IGBT Device in Rail Transit
机车电传动, 2020 Hybrid SiC IGBT uses SiC Schottky diode to replace the anti-parallel diode in traditional IGBT devices, which can reduce the diode reverse recovery loss and IGBT turn-on loss.
Wei TIAN +6 more
doaj
Coordinated optimization method for IGBT peak voltage suppression of mine-used inverter
Gong-kuang zidonghua, 2022 At present, the methods of optimizing busbar structure parameters, changing gate drive resistance and designing absorption circuit are commonly used to suppress the peak voltage of insulated gate bipolar transistor (IGBT) in mine-used inverter caused by ...
WANG Yue +3 more
doaj +1 more source
A Novel Discrete Branch Bidirectional Solid-State Circuit Breaker Based on Mixture Device
CES Transactions on Electrical Machines and SystemsSolid state circuit breakers (SSCBs) based on full-controlled devices such as IGBT and based on half-controlled devices such as thyristor have their respective advantages.
Qingpeng Zeng +4 more
doaj +1 more source
A Snapback-Free and Low Turn-Off Loss 15 kV 4H–SiC IGBT with Multifunctional P-Floating Layer
Micromachines, 2022 In this paper, a 4H–SiC IGBT with a multifunctional P-floating layer (MP-IGBT) is proposed and investigated by Silvaco TCAD simulations. Compared with the conventional 4H–SiC field stop IGBT (FS-IGBT), the MP-IGBT structure features a P-floating layer ...
Xiaodong Zhang +4 more
doaj +1 more source