Results 21 to 30 of about 10,668 (228)
Experimental Modeling of Forward Recovery Characteristics of IGBT for DC Circuit Breaker
Zhongguo dianli, 2021 DC circuit breaker is the main means to clear the faults in VSC-HVDC power grid. Before action of the hybrid DC circuit breaker, the IGBT in the transfer branch is in a state of zero voltage and zero current.
Hong SHEN +4 more
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Research on the Gate Oxide Layer Aging Trend of Power Electronic Device
IEEE Access, 2021 The introduction of fully electric vehicles (FEVs) into the mainstream has raised concerns about the reliability of their electronic components such as Insulated Gate Bipolar Translator (IGBT).
Guoqing Xu +4 more
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FUTURE TRENDS IN POWER ELECTRONIC DEVICES [PDF]
Journal of Engineering Science (Chişinău), 2019 The recent technological progress of semiconductors and increasing demand for power electronic devices in the different domains of electric energy particularly for applications in aeronautics and networks of transport and distribution impose new ...
Băjenescu, Titu-Marius I.
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Micromachines, 2023 A novel snapback-free superjunction reverse-conducting insulated gate bipolar transistor (SJ-RC-IGBT) is proposed and verified by simulation. In the SJ-RC-IGBT, the parasitic P/N/P/N structure as thyristor or Shockley diode demonstrates large ...
Zhigang Wang, Chong Yang, Xiaobing Huang
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Low Switching Loss Built-In Diode of High-Voltage RC-IGBT with Shortened P+ Emitter
Micromachines, 2023 In this paper, a low switching loss built-in diode of a high-voltage reverse-conducting insulated gate bipolar transistor (RC-IGBT) is proposed without deteriorating IGBT characteristics.
Wei Wu +5 more
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Доклады Белорусского государственного университета информатики и радиоэлектроникиThis work presents the results of computer simulations of the operational characteristics of vertical channel Insulated Gate Bipolar Transistor (IGBT) device structures designed according to the following technologies: Trench-IGBT, Superjunction Trench ...
Trong Thanh Nguyen +3 more
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Statistical analysis and optimization of igbt manufacturing flow
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2015 The use of computer simulation, design and optimization of power electronic devices formation technological processes can significantly reduce development time, improve the accuracy of calculations, choose the best options for implementation based on ...
V. V. Baranov +5 more
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Review on Failure Mode and Mechanism of Press-Pack IGBT and Thyristor Devices
Zhongguo dianli, 2023 High voltage and large capacity press-pack insulated gate bipolar transistor (IGBT) devices and thyristor devices are the core devices in high-voltage DC transmission projects, which are of great significance for the efficient use of energy.
Haoze LUO +5 more
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Design of IGBT parameter prediction hardware system based on LSTM network
Dianzi Jishu Yingyong, 2019 Parameter prediction of insulated gate bipolar transistor(IGBT) can effectively avoid the economic loss and safety problem caused by its failure. Based on the analysis of IGBT parameters, the paper designs a SoC hardware system of IGBT parameters ...
Li Yuanbo, Yang Yuan, Zhang Xiaotao
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Design of IGBT gate drive circuit based on ACPL-332J
Meikuang Anquan, 2023 The main circuit and related principles of inverter are briefly described in this paper, and then the IGBT driver and its fault protection circuit are designed in detail based on ACPL-332J chip.
WU Shitao +3 more
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