Results 21 to 30 of about 2,255 (184)
A New SiC Planar-Gate IGBT for Injection Enhancement Effect and Low Oxide Field
Energies, 2020 A new silicon carbide (SiC) planar-gate insulated-gate bipolar transistor (IGBT) is proposed and comprehensively investigated in this paper. Compared to the traditional SiC planar-gate IGBT, the new IGBT boasts a much stronger injection enhancement ...
Meng Zhang +4 more
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Доклады Белорусского государственного университета информатики и радиоэлектроникиThis work presents the results of computer simulations of the operational characteristics of vertical channel Insulated Gate Bipolar Transistor (IGBT) device structures designed according to the following technologies: Trench-IGBT, Superjunction Trench ...
Trong Thanh Nguyen +3 more
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Coordinated optimization method for IGBT peak voltage suppression of mine-used inverter
Gong-kuang zidonghua, 2022 At present, the methods of optimizing busbar structure parameters, changing gate drive resistance and designing absorption circuit are commonly used to suppress the peak voltage of insulated gate bipolar transistor (IGBT) in mine-used inverter caused by ...
WANG Yue +3 more
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Comparative Study on Application of Hybrid SiC IGBT Device and Si IGBT Device in Rail Transit
机车电传动, 2020 Hybrid SiC IGBT uses SiC Schottky diode to replace the anti-parallel diode in traditional IGBT devices, which can reduce the diode reverse recovery loss and IGBT turn-on loss.
Wei TIAN +6 more
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Review on Failure Mode and Mechanism of Press-Pack IGBT and Thyristor Devices
Zhongguo dianli, 2023 High voltage and large capacity press-pack insulated gate bipolar transistor (IGBT) devices and thyristor devices are the core devices in high-voltage DC transmission projects, which are of great significance for the efficient use of energy.
Haoze LUO +5 more
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Design of IGBT gate drive circuit based on ACPL-332J
Meikuang Anquan, 2023 The main circuit and related principles of inverter are briefly described in this paper, and then the IGBT driver and its fault protection circuit are designed in detail based on ACPL-332J chip.
WU Shitao +3 more
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A Novel Discrete Branch Bidirectional Solid-State Circuit Breaker Based on Mixture Device
CES Transactions on Electrical Machines and SystemsSolid state circuit breakers (SSCBs) based on full-controlled devices such as IGBT and based on half-controlled devices such as thyristor have their respective advantages.
Qingpeng Zeng +4 more
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Lifetime Analysis of Grid‐Tied Photovoltaic System Considering DC–DC Converter Ripple and Efficiency
Energy Science &Engineering, EarlyView.This work presents a comprehensive lifetime analysis of a two‐stage grid‐tied photovoltaic (PV) system by incorporating critical factors such as input current ripple and operating voltage variations, which are often neglected in conventional studies.
Surla Vishnu Kanchana Naresh +2 more
wiley +1 more source
Loss Characteristics of 6.5 kV RC-IGBT Applied to a Traction Converter
Energies, 2017 6.5 kV level IGBT (Insulated Gate Bipolar Transistor) modules are widely applied in megawatt locomotive (MCUs) traction converters, to achieve an upper 3.5 kV DC link, which is beneficial for decreasing power losses and increasing the power density ...
Xianjin Huang +4 more
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Variance‐Empirical Mode Decomposition Method for Fault Detection in MMC‐HVDC Transmission Lines
Energy Science &Engineering, EarlyView.A variance‐embedded empirical mode decomposition (VEMD) method is proposed for fast and accurate fault detection in MMC‐HVDC transmission lines. By combining variance analysis with EMD, the method reliably detects various faults without communication links and remains robust to noise and non‐fault transients.
Seyed Amir Hosseini, Behrooz Taheri
wiley +1 more source