A Control Strategy of IGBT Junction Temperature for Electric Vehicle during Start-up Process
Kongzhi Yu Xinxi Jishu, 2023 In the start-up process of electric vehicles, due to low output current frequency of controller, junction temperature fluctuates seriously when output torque is full, which is easy to cause the IGBT chip to have too high junction temperature, and will ...
LIU Peng +5 more
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HVDC Transmission Systems based Multi-level Voltage Source Converters for Iraqi Super Grid [PDF]
Engineering and Technology Journal, 2014 High Voltage Direct Current Transmission (HVDC) with Voltage Source Converter (VSC) technology provides substantial technical and economical advantages for different applications compared to conventional HVDC transmission systems based on thyristor ...
Adil Hameed Ahmed +1 more
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Transient electrothermal simulation of power semiconductor devices [PDF]
, 2010 In this paper, a new thermal model based on the Fourier series solution of heat conduction equation has been introduced in detail. 1-D and 2-D Fourier series thermal models have been programmed in MATLAB/Simulink.
Bryant, Angus T. +12 more
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Loss Characteristics of 6.5 kV RC-IGBT Applied to a Traction Converter
Energies, 2017 6.5 kV level IGBT (Insulated Gate Bipolar Transistor) modules are widely applied in megawatt locomotive (MCUs) traction converters, to achieve an upper 3.5 kV DC link, which is beneficial for decreasing power losses and increasing the power density ...
Xianjin Huang +4 more
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Mechanical Stress Analysis in High Power Press Pack IGBT
Zhongguo dianli, 2020 Mechanical stress is one of the key factors affecting the electrical characteristics, thermal characteristics and reliability of high-voltage high-power press-pack IGBT devices.
Xinling TANG +7 more
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Доклады Белорусского государственного университета информатики и радиоэлектроникиThis work presents the results of computer simulations of the operational characteristics of vertical channel Insulated Gate Bipolar Transistor (IGBT) device structures designed according to the following technologies: Trench-IGBT, Superjunction Trench ...
Trong Thanh Nguyen +3 more
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Comparative Study on Application of Hybrid SiC IGBT Device and Si IGBT Device in Rail Transit
机车电传动, 2020 Hybrid SiC IGBT uses SiC Schottky diode to replace the anti-parallel diode in traditional IGBT devices, which can reduce the diode reverse recovery loss and IGBT turn-on loss.
Wei TIAN +6 more
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Coordinated optimization method for IGBT peak voltage suppression of mine-used inverter
Gong-kuang zidonghua, 2022 At present, the methods of optimizing busbar structure parameters, changing gate drive resistance and designing absorption circuit are commonly used to suppress the peak voltage of insulated gate bipolar transistor (IGBT) in mine-used inverter caused by ...
WANG Yue +3 more
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Influence of Package Parasitic Parameters on Transient Current Distribution of Paralleled IGBT Chips
Zhongguo dianli, 2019 High power IGBT usually use multiple chips in parallel to achieve large current. The consistency of the dynamic and static current distribution of parallel chips is essential to improve the current level and reliability of devices.At first, the ...
Hao SHI +5 more
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A Novel Discrete Branch Bidirectional Solid-State Circuit Breaker Based on Mixture Device
CES Transactions on Electrical Machines and SystemsSolid state circuit breakers (SSCBs) based on full-controlled devices such as IGBT and based on half-controlled devices such as thyristor have their respective advantages.
Qingpeng Zeng +4 more
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