Results 41 to 50 of about 10,668 (228)
Comparative Study on Application of Hybrid SiC IGBT Device and Si IGBT Device in Rail Transit
Hybrid SiC IGBT uses SiC Schottky diode to replace the anti-parallel diode in traditional IGBT devices, which can reduce the diode reverse recovery loss and IGBT turn-on loss.
Wei TIAN +6 more
doaj
Influence of Package Parasitic Parameters on Transient Current Distribution of Paralleled IGBT Chips
High power IGBT usually use multiple chips in parallel to achieve large current. The consistency of the dynamic and static current distribution of parallel chips is essential to improve the current level and reliability of devices.At first, the ...
Hao SHI +5 more
doaj +1 more source
A New SiC Planar-Gate IGBT for Injection Enhancement Effect and Low Oxide Field
A new silicon carbide (SiC) planar-gate insulated-gate bipolar transistor (IGBT) is proposed and comprehensively investigated in this paper. Compared to the traditional SiC planar-gate IGBT, the new IGBT boasts a much stronger injection enhancement ...
Meng Zhang +4 more
doaj +1 more source
Probabilistic approaches and reliability design of power modules [PDF]
The weak point for the standard power IGBT modules in terms of reliability is thermal fatigue in solder joints due to the thermal stress induced by constitutive materials with different coefficients of thermal expansion (CTE). So far, many researches are
Micol A. +4 more
doaj +1 more source
Parametric Modeling and Analysis of High Power IGBT Device
In the high-power IGBT module commutation circuit, under the combined impact of stray inductance and di/dt, the IGBT is under significant voltage and current stresses during the processes of switching on and off, which increases system losses and ...
LIU Fei, MAO Kaixiang
doaj +1 more source
ABSTRACT To effectively suppress transient overvoltages in HVDC systems, the design and experimental validation of a multi‐module series controllable arrester are presented. The voltage‐limiting performance, series voltage equalisation capability, and robustness under fault conditions in high‐voltage scenarios require further research.
Tai Yang +4 more
wiley +1 more source
Application Status and Development Trends of DC Ice‐Melting Devices in China's Power Grid
This paper summarises the development history and engineering application status of DC ice‐melting devices (DCIMD) in China, analyses the principles, advantages, disadvantages and adaptability of mainstream topologies and discusses the key problems and corresponding improvement directions.
Ming Lei +6 more
wiley +1 more source
Study on the IGBT Overcurrent Failure of VSC-HVDC Converter Valve
IGBT overcurrent failure, which is one of the important factors harming VSC-HVDC safe operation, can easily lead to module explosion, water cooling system leakage and even the converter valve shutdown.
Jingbo FENG +4 more
doaj +1 more source
Integral Sliding Mode Controller for Modular Multilevel Inverter‐Based PMSM Drives
The primary contribution of this work is the development of an integral sliding mode controller (ISMC) designed for motor speed and current regulation, optimized to enhance control performance with the unique MMLI structure. The proposed MMLI architecture offers a reduced number of switching components and passive elements, thereby minimizing system ...
Taiea A. Ahmed +6 more
wiley +1 more source
A Hybrid EV Charging Architecture Integrating DC Fast Charging and Wireless Power Transfer
A hybrid EV charging architecture combining DC fast charging and wireless power transfer is proposed. The system achieves high efficiency, grid compliance, and reliable bidirectional operation, offering a scalable solution that enhances user convenience while paving the way for smarter, future‐ready EV charging infrastructure.
Ali Almaktoof +3 more
wiley +1 more source

