Доклады Белорусского государственного университета информатики и радиоэлектроникиThis work presents the results of computer simulations of the operational characteristics of vertical channel Insulated Gate Bipolar Transistor (IGBT) device structures designed according to the following technologies: Trench-IGBT, Superjunction Trench ...
Trong Thanh Nguyen +3 more
doaj +1 more source
Influence of Package Parasitic Parameters on Transient Current Distribution of Paralleled IGBT Chips
Zhongguo dianli, 2019 High power IGBT usually use multiple chips in parallel to achieve large current. The consistency of the dynamic and static current distribution of parallel chips is essential to improve the current level and reliability of devices.At first, the ...
Hao SHI +5 more
doaj +1 more source
Hybrid and modular multilevel converter designs for isolated HVDC–DC converters [PDF]
, 2018 Efficient medium and high-voltage dc-dc conversion is critical for future dc grids. This paper proposes a hybrid multilevel dc-ac converter structure that is used as the kernel of dc-dc conversion systems.
Adam, G.P. +4 more
core +1 more source
Review on Failure Mode and Mechanism of Press-Pack IGBT and Thyristor Devices
Zhongguo dianli, 2023 High voltage and large capacity press-pack insulated gate bipolar transistor (IGBT) devices and thyristor devices are the core devices in high-voltage DC transmission projects, which are of great significance for the efficient use of energy.
Haoze LUO +5 more
doaj +1 more source
Less-conventional low-consumption galvanic separated MOSFET-IGBT gate drive supply [PDF]
, 2017 A simple half-bridge, galvanic separated power supply which can be short circuit proof is proposed for gate driver local supplies. The supply is made while hacking a common mode type filter as a transformer, as the transformer shows a good insulation, it
Bikorimana, Jean Marie Vianney +1 more
core +3 more sources
A Novel Discrete Branch Bidirectional Solid-State Circuit Breaker Based on Mixture Device
CES Transactions on Electrical Machines and SystemsSolid state circuit breakers (SSCBs) based on full-controlled devices such as IGBT and based on half-controlled devices such as thyristor have their respective advantages.
Qingpeng Zeng +4 more
doaj +1 more source
Design of IGBT gate drive circuit based on ACPL-332J
Meikuang Anquan, 2023 The main circuit and related principles of inverter are briefly described in this paper, and then the IGBT driver and its fault protection circuit are designed in detail based on ACPL-332J chip.
WU Shitao +3 more
doaj +1 more source
Precise modelling of switching and conduction losses in cascaded h-bridge multilevel inverters [PDF]
, 2014 Nowadays, voltage source multilevel inverters are being used extensively in industry due to its many advantages, compared to conventional two level inverters, such as higher output voltage at low switching frequency, low voltage stress(dv/dt), lower ...
Alamri, B, Darwish, M
core +1 more source
Evaluation of a dual-T-type converter supplying an open-end winding induction machine [PDF]
, 2013 The multilevel inverter is a promising technology compared to two-level inverters in the applications of ac-drives and smart-grid applications. In this paper, a dual-T-type three-level inverters is used to drive an open-end winding induction machine. The
Darba, Araz +5 more
core +1 more source
Applications of combined MOSFET-IGBT power leg with reduced switching losses [PDF]
, 2008 This paper discusses power legs built upon the combination of a MOSFET and an IGBT. The suggested combined use of those different switches is intended to be applied in PWM controlled single and three phase inverters.
Marinov, Angel S +2 more
core