Results 31 to 40 of about 12,603 (120)

A Comprehensive Review of Fault‐Current Limiter Technologies for Smart and Resilient Power Systems

Energy Science &Engineering, EarlyView.
This review compares superconducting, solid‐state, and hybrid fault‐current limiters (FCLs) for modern alternating current, direct current, and hybrid grids. It shows that optimal FCL selection depends on fault characteristics, network configuration, voltage level, protection coordination, and resilience requirements rather than on a universally ...
Abdelrahman Farghly, Eslam Essam, Hilmy Awad, Samia Abdelfatah, Walid Issa, Abdallah M. Hamada   +5 more
wiley   +1 more source

Zero‐Current Switching Based Model Predictive Control of a Double‐Extended Overlapped Alternate Arm Converter Used in the VSC–HVDC System

High Voltage, EarlyView.
ABSTRACT The alternate arm converter (AAC) is one of the most efficient multilevel topologies based on voltage source converters (VSCs), which has recently gained attention in various applications, particularly in high voltage direct current (HVDC) systems.
Ehsan Akbari, Milad Samady Shadlu
wiley   +1 more source

Comprehensive Design and Experimental Validation of 30 kV Ultra‐Fast Flexible Controllable Arresters for HVDC Systems

High Voltage, EarlyView.
ABSTRACT To effectively suppress transient overvoltages in HVDC systems, the design and experimental validation of a multi‐module series controllable arrester are presented. The voltage‐limiting performance, series voltage equalisation capability, and robustness under fault conditions in high‐voltage scenarios require further research.
Tai Yang, Xiangyu Zhang, Sihang Wu, Lei Qi, Xiang Cui   +4 more
wiley   +1 more source

Review on Failure Mode and Mechanism of Press-Pack IGBT and Thyristor Devices

Zhongguo dianli, 2023
High voltage and large capacity press-pack insulated gate bipolar transistor (IGBT) devices and thyristor devices are the core devices in high-voltage DC transmission projects, which are of great significance for the efficient use of energy.
Haoze LUO, Zhong CHEN, Wei YANG, Jia XIE, Di HU, Weiping GUAN   +5 more
doaj   +1 more source

Design of IGBT gate drive circuit based on ACPL-332J

Meikuang Anquan, 2023
The main circuit and related principles of inverter are briefly described in this paper, and then the IGBT driver and its fault protection circuit are designed in detail based on ACPL-332J chip.
WU Shitao, XU Jiacheng, SHEN Chuanzhang, ZHAO Yubin   +3 more
doaj   +1 more source

Endurance of Epoxy Resin Cast Insulation With Interfacial Micro‐Crack Defect Under 50 Hz Sine and Kilohertz Square Voltages

High Voltage, EarlyView.
ABSTRACT Crack‐type defects are commonly found in epoxy composite cast insulation due to residual, thermal and external stresses. When combined with inverter‐type voltage stress, as in epoxy cast high‐frequency transformers (HFTs), the likelihood of insulation failure increases significantly. In this study, a method setting microcracks perpendicular to
Xingyu Shang, Lei Pang, Ziyan Yu, Wanlin Tang, Xiang Cai   +4 more
wiley   +1 more source

Switching characteristic and analysis of insulated-gate bipolar transistor (IGBT) [PDF]

, 2009
Test circuit of Insulated-gate Bipolar Transistor (IGBT-type IRGPC50F); standard ultra fast speed IGBT will be operated when gate voltage, Vg is applied to the Gate-terminal.
Bakhtiar, Ahmad
core   +2 more sources

A Review of Transient Support and Security‐Stability Enhancement Control Strategies for Grid‐Forming Voltage Source Converter‐Based High Voltage Direct Current Transmission

High Voltage, EarlyView.
ABSTRACT Amid the ongoing global energy transition, the short‐circuit ratios of AC power grids are continuously decreasing. Grid‐forming voltage source converter‐based high voltage direct current transmission (GFM VSC‐HVDC) systems have therefore come to the forefront of attention.
Cheng Peng, Guangfu Tang, Yuexi Yang, Xiao Zhou, Chong Gao, Zhiyuan He, Xinying Wang, Hui Pang   +7 more
wiley   +1 more source

Моделирование технологии формирования структуры IGBT транзистора [PDF]

, 2010
IGBT-транзистор (англ. Insulated Gate Bipolar Transistor — биполярный транзистор с изолированным затвором) представляет собой силовой электронный прибор, предназначенный в основном, для управления электрическими приводами. Выпускаются как отдельные IGBT,
Шелибак, И. М.
core   +1 more source

Simulation Study on 6.5 kV SiC Trench Gate p-Channel Superjunction Insulated Gate Bipolar Transistor

Micromachines
This paper investigates 6.5 kV SiC trench gate p-channel IGBTs using Sentaurus TCAD simulations. The proposed superjunction structure is compared to conventional designs to highlight its advantages.
Kuan-Min Kang, Jia-Wei Hu, Chih-Fang Huang   +2 more
doaj   +1 more source