Results 11 to 20 of about 2,255 (184)
FUTURE TRENDS IN POWER ELECTRONIC DEVICES [PDF]
Journal of Engineering Science (Chişinău), 2019 The recent technological progress of semiconductors and increasing demand for power electronic devices in the different domains of electric energy particularly for applications in aeronautics and networks of transport and distribution impose new ...
Băjenescu, Titu-Marius I.
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Research on the Gate Oxide Layer Aging Trend of Power Electronic Device
IEEE Access, 2021 The introduction of fully electric vehicles (FEVs) into the mainstream has raised concerns about the reliability of their electronic components such as Insulated Gate Bipolar Translator (IGBT).
Guoqing Xu +4 more
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Известия высших учебных заведений: Проблемы энергетики, 2017 Improving the energy efficiency of vehicles is an essential feature of scientific and technical progress. One means of increasing the energy efficiency of transport is the introduction of electric drive with multiphase induction motors.
A. G. Logacheva +2 more
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Low Switching Loss Built-In Diode of High-Voltage RC-IGBT with Shortened P+ Emitter
Micromachines, 2023 In this paper, a low switching loss built-in diode of a high-voltage reverse-conducting insulated gate bipolar transistor (RC-IGBT) is proposed without deteriorating IGBT characteristics.
Wei Wu +5 more
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Deep learning‐based auto‐contouring for organs at risk in three‐dimensional image‐guided brachytherapy for cervical cancer and endometrial cancer [PDF]
J Appl Clin Med PhysAbstract Background Automatic contouring can reduce the time required for delineating organs at risk (OARs) in brachytherapy planning and minimize interobserver variability. Purpose This study aimed to develop and evaluate a deep learning‐based automatic contouring model for OARs in three‐dimensional image‐guided brachytherapy (3D‐IGBT) for cervical ...
Takahashi K +11 more
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Mechanical Stress Analysis in High Power Press Pack IGBT
Zhongguo dianli, 2020 Mechanical stress is one of the key factors affecting the electrical characteristics, thermal characteristics and reliability of high-voltage high-power press-pack IGBT devices.
Xinling TANG +7 more
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A Control Strategy of IGBT Junction Temperature for Electric Vehicle during Start-up Process
Kongzhi Yu Xinxi Jishu, 2023 In the start-up process of electric vehicles, due to low output current frequency of controller, junction temperature fluctuates seriously when output torque is full, which is easy to cause the IGBT chip to have too high junction temperature, and will ...
LIU Peng +5 more
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HVDC Transmission Systems based Multi-level Voltage Source Converters for Iraqi Super Grid [PDF]
Engineering and Technology Journal, 2014 High Voltage Direct Current Transmission (HVDC) with Voltage Source Converter (VSC) technology provides substantial technical and economical advantages for different applications compared to conventional HVDC transmission systems based on thyristor ...
Adil Hameed Ahmed +1 more
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A Method for Thermal Resistance Test of Reverse-Conducting IGBT (RC-IGBT)
IOP Conference Series: Materials Science and Engineering, 2021 Abstract The RC-IGBT is integrated IGBT and fast recovery diode (FRD) on the same chip. RC-IGBT has smaller size, higher power density, lower cost, and higher reliability. However, due to the snap-back effect, the traditional test circuit and method cannot accurately measure the thermal resistance of RC-IGBT.
Y Chen +6 more
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Influence of Package Parasitic Parameters on Transient Current Distribution of Paralleled IGBT Chips
Zhongguo dianli, 2019 High power IGBT usually use multiple chips in parallel to achieve large current. The consistency of the dynamic and static current distribution of parallel chips is essential to improve the current level and reliability of devices.At first, the ...
Hao SHI +5 more
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