Prognostics for electronics components of avionics - NASA IGBT accelerated ageing case study [PDF]
, 2013 Insulate gate bipolar transistors (IGBTs) are widely used in electric vehicles, railway locomotive and new generation aircrafts, due to the IGBTs have advantages in small conduction resistance and small drive current.
Xie, Yuan'an
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Power Cycling Capability and Reliability Test of IGBT Modules
机车电传动, 2015 In order to examine the reliability of IGBT modules , IGBT package structure was analyzed and a new model of powercycling was proposed based on the traditional method.
LI Shiping +4 more
doaj +2 more sources
1.7 kV IGBT Driver Based on Electromagnetism Isolation
Kongzhi Yu Xinxi Jishu, 2015 The basic characteristics of IGBT driver were analyzed and an IGBT driver based on electromagnetism isolation was designed. Chopping and short-circuit test researches on the driver were executed.
XIE Shunmeng +4 more
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A retrospective study of locally advanced cervical cancer cases treated with CT-based 3D-IGBT compared with 2D-IGBT [PDF]
, 2023 香川大学Kagawa University博士（医学）Purpose: To retrospectively review locally advanced cervical cancer (CC) cases treated with three-dimensional image-guided brachytherapy (3D-IGBT) and two-dimensional (2D)-IGBT.Materials and methods: Patients with Stage IB-IVa ...
木下, 敏史 +2 more
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Известия высших учебных заведений: Проблемы энергетики, 2017 Improving the energy efficiency of vehicles is an essential feature of scientific and technical progress. One means of increasing the energy efficiency of transport is the introduction of electric drive with multiphase induction motors.
A. G. Logacheva +2 more
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Experimental Modeling of Forward Recovery Characteristics of IGBT for DC Circuit Breaker
Zhongguo dianli, 2021 DC circuit breaker is the main means to clear the faults in VSC-HVDC power grid. Before action of the hybrid DC circuit breaker, the IGBT in the transfer branch is in a state of zero voltage and zero current.
Hong SHEN +4 more
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A New SiC Planar-Gate IGBT for Injection Enhancement Effect and Low Oxide Field
Energies, 2020 A new silicon carbide (SiC) planar-gate insulated-gate bipolar transistor (IGBT) is proposed and comprehensively investigated in this paper. Compared to the traditional SiC planar-gate IGBT, the new IGBT boasts a much stronger injection enhancement ...
Meng Zhang +4 more
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FUTURE TRENDS IN POWER ELECTRONIC DEVICES [PDF]
Journal of Engineering Science (Chişinău), 2019 The recent technological progress of semiconductors and increasing demand for power electronic devices in the different domains of electric energy particularly for applications in aeronautics and networks of transport and distribution impose new ...
Băjenescu, Titu-Marius I.
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A method for predicting IGBT junction temperature under transient condition [PDF]
, 2008 In this paper, a method to predict junction temperature of the solid-state switch under transient condition is presented. The method is based on the thermal model of the switch and instantaneous measurement of the energy loss in the device.
Putrus, G. A. +6 more
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Thermo-mechanical stress of bonded wires used in high power modules with alternating and direct current modes [PDF]
, 2012 Today, power electronic reliability is a main subject of interest for many companies and laboratories. The main process leading to the IGBT failure is the cycling thermal stress.
Medjahed, Hassen +2 more
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