Low Switching Loss Built-In Diode of High-Voltage RC-IGBT with Shortened P+ Emitter
Micromachines, 2023 In this paper, a low switching loss built-in diode of a high-voltage reverse-conducting insulated gate bipolar transistor (RC-IGBT) is proposed without deteriorating IGBT characteristics.
Wei Wu +5 more
doaj +2 more sources
A New SiC Planar-Gate IGBT for Injection Enhancement Effect and Low Oxide Field
Energies, 2020 A new silicon carbide (SiC) planar-gate insulated-gate bipolar transistor (IGBT) is proposed and comprehensively investigated in this paper. Compared to the traditional SiC planar-gate IGBT, the new IGBT boasts a much stronger injection enhancement ...
Meng Zhang +4 more
doaj +2 more sources
Prognostics for electronics components of avionics - NASA IGBT accelerated ageing case study [PDF]
, 2013 Insulate gate bipolar transistors (IGBTs) are widely used in electric vehicles, railway locomotive and new generation aircrafts, due to the IGBTs have advantages in small conduction resistance and small drive current.
Xie, Yuan'an
core +7 more sources
Loss Characteristics of 6.5 kV RC-IGBT Applied to a Traction Converter
Energies, 2017 6.5 kV level IGBT (Insulated Gate Bipolar Transistor) modules are widely applied in megawatt locomotive (MCUs) traction converters, to achieve an upper 3.5 kV DC link, which is beneficial for decreasing power losses and increasing the power density ...
Xianjin Huang +4 more
doaj +2 more sources
Power Cycling Capability and Reliability Test of IGBT Modules
机车电传动, 2015 In order to examine the reliability of IGBT modules , IGBT package structure was analyzed and a new model of powercycling was proposed based on the traditional method.
LI Shiping +4 more
doaj +2 more sources
Power Performance Comparison of SiC-IGBT and Si-IGBT Switches in a Three-Phase Inverter for Aircraft Applications [PDF]
, 2022 The converters used to integrate the ground power station of planes with the utility grid are generally created with silicon-insulated gate bipolar transistor (Si-IGBT)-based semiconductor technologies. The Si-IGBT switch-based converters are inefficient,
Ibrahim A. S. Abdalgader +5 more
core +1 more source
A method for predicting IGBT junction temperature under transient condition [PDF]
, 2008 In this paper, a method to predict junction temperature of the solid-state switch under transient condition is presented. The method is based on the thermal model of the switch and instantaneous measurement of the energy loss in the device.
Putrus, G. A. +6 more
core +1 more source
A Control Strategy of IGBT Junction Temperature for Electric Vehicle during Start-up Process
Kongzhi Yu Xinxi Jishu, 2023 In the start-up process of electric vehicles, due to low output current frequency of controller, junction temperature fluctuates seriously when output torque is full, which is easy to cause the IGBT chip to have too high junction temperature, and will ...
LIU Peng +5 more
doaj +1 more source
Transient electrothermal simulation of power semiconductor devices [PDF]
, 2010 In this paper, a new thermal model based on the Fourier series solution of heat conduction equation has been introduced in detail. 1-D and 2-D Fourier series thermal models have been programmed in MATLAB/Simulink.
Bryant, Angus T. +12 more
core +1 more source
Mechanical Stress Analysis in High Power Press Pack IGBT
Zhongguo dianli, 2020 Mechanical stress is one of the key factors affecting the electrical characteristics, thermal characteristics and reliability of high-voltage high-power press-pack IGBT devices.
Xinling TANG +7 more
doaj +1 more source