Intrinsic fluctuations in sub 10-nm double-gate MOSFETs introduced by discreteness of charge and matter [PDF]
, 2002 We study, using numerical simulation, the intrinsic parameter fluctuations in sub 10 nm gate length double gate MOSFETs introduced by discreteness of charge and atomicity of matter.
Asenov, A., Brown, A.R., Watling, J.R.
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IGBTs: Concept, Development and New Structures
Kongzhi Yu Xinxi Jishu, 2017 The insulated gate bipolar transistor (IGBT) is arguably the most innovative power device today. It is the only device concept known today that incorporates in a single cell a MOSFET with a bipolar junction transistor, whereby both devices are active in ...
Florin Udrea
doaj
Study on the IGBT Using a Deep Trench Filled With SiO2 and High-k Dielectric Film
IEEE Journal of the Electron Devices Society, 2020 A novel insulated gate bipolar transistor (IGBT) using a deep trench filled with SiO2 and high-k dielectric film (HKF) is presented. The deep trench with the HKF can provide rapid depletion of the drift region during the turn-off transient, eliminating ...
Weizhen Chen, Junji Cheng
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Adaptive Residual Useful Life Prediction for the Insulated-Gate Bipolar Transistors with Pulse-Width Modulation Based on Multiple Modes and Transfer Learning [PDF]
, 2023 Wujin Deng +6 more
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Field-effect transistors as dc amplifiers [PDF]
Field effect transistors as direct current ...
Gardner, F. M.
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Structural Features and Recent Progress of Super Junction IGBT
机车电传动, 2021 With the development of insulated gate bipolar transistor (IGBT) technology, the field stop structure is getting closer to its theoretical limit. Super junction (SJ) is known as "milestone in power MOSFET" and has been introduced in IGBT to further ...
Jinping ZHANG, Xiang XIAO, Bo ZHANG
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An introduction to the BANNING design automation system for shuttle microelectronic hardware development [PDF]
The BANNING MOS design system is presented. It complements rather than supplant the normal design activities associated with the design and fabrication of low-power digital electronic equipment.
Mcgrady, W. J.
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Self-powered bipolar gate-driver power supply circuit for neutral-point-clamped converters [PDF]
, 2018 © 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting /republishing this material for advertising or promotional purposes, creating new ...
Bordonau Farrerons, José +3 more
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Доклады Белорусского государственного университета информатики и радиоэлектроники, 2019 The results of the optimization of design and technological parameters device structures insulated-gate bipolar transistor (IGBT), formed in bulk silicon and using «Silicon on Insulator» (SOI) technology are presented.
S. Ibrahim +2 more
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Creation of the Insulated Gate Bipolar Transistor [PDF]
, 2023 B. Jayant Baliga
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