Investigation of impact of the gate circuitry on IGBT transistor dynamic parameters
Mokslas: Lietuvos Ateitis, 2010 The impact of Insulated Gate Bipolar Transistor driver circuit parameters on the rise and fall time of the collector current and voltage collector-emitter was investigated.
Vytautas Bleizgys +3 more
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Beitrag zur Analyse des elektrischen Verhaltens von hoch-sperrenden rückwärts leitfähigen Insulated Gate Bipolar Transistoren [PDF]
, 2015 Rückwärts leitfähige IGBTs bilden einen neuen Typ von Leistungshalbleitern, welche die Funktionalität von IGBT und antiparallelen Dioden in einem Chip integrieren.
Wigger, Daniel (gnd: 1079691545)
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Design of insulated gate bipolar transistor using novel structure
, 2002 In this work, Lateral Insulated Gate Bipolar Transistor (LIGBT) based on a novel structure of partial Silicon On Insulator (partial SOI) has been designed. The position of the silicon window has been determined by comparing the simulation results of full
Zhang, Guowei
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, 2020 International audienceWith the continuous miniaturization and rapid increase in the power ratings of an insulated-gate bipolar transistor (IGBT), the exact junction temperature becomes one of the critical performance parameters in evaluating the ...
Ren, Zhuoxiang +2 more
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Physics‐based insulated‐gate bipolar transistor model with input capacitance correction
, 2018 Insulated‐gate bipolar transistor (IGBT) terminal capacitances play an important role in IGBT switching transients. The terminal capacitance modelling is a difficult task because of their operating‐point‐dependent characteristics.
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Lateral Insulated-Gate Bipolar Transistor (LIGBT) with a Segmented Anode Structure
, 1991 A new lateral insulated-gate bipolar transistor (LIGBT) structure, called the segmented anode LIGBT, is presented. In this structure, the anode, which is responsible for the injection of minority carriers for conductivity modulation, is implemented using
Mukherjee, Satyen, Sin, Johnny K.O.
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A Novel Concept of Electron-Hole Enhancement for Superjunction Reverse-Conducting Insulated Gate Bipolar Transistor with Electron-Blocking Layer. [PDF]
Micromachines (Basel), 2023 Wang Z, Yang C, Huang X.
europepmc +1 more source
Prediction of Static Characteristic Parameters of an Insulated Gate Bipolar Transistor Using Artificial Neural Network. [PDF]
Micromachines (Basel), 2021 Yao Q +9 more
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Steady-state analytical model for the trench insulated gate bipolar transistor
, 1995 A steady-state, physically-based analytical model for the Trench Insulated Gate Bipolar Transistor which accounts for a combined PIN diode - PNP transistor carrier dynamics is proposed. Previous models (i.e.
Udrea, F, Amaratunga, GAJ, ,
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, 2019 We studied the effects of gamma-ray irradiation on the static and dynamic electrical characteristics of a trench-gate non-punch-through insulated gate bipolar transistor (IGBT) device.
Sun, Gwang Min +3 more
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