Integrated Rogowski Coil Sensor for Press-Pack Insulated Gate Bipolar Transistor Chips [PDF]
Sensors, 2020 Recently, the press-pack insulated gate bipolar transistor (IGBT) has usually been used in direct current (DC) transmission. The press-pack IGBT (PPI) adopts a parallel layout of boss chips, and the currents of each chip will be uneven in the process of ...
Chaoqun Jiao +3 more
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Research Progress on Insulated Gate Bipolar Transistor (IGBT) Modules [PDF]
MicromachinesWith the rapid advancement of social productivity and technological innovation, the insulated gate bipolar transistor (IGBT) has emerged as a cornerstone in modern power electronic devices [...]
Peisheng Liu, Yaohui Deng
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INSULATED-GATE BIPOLAR TRANSISTOR
Chronos, 2022 Insulated-gate bipolar transistor is a cunningly composed hybrid of field-effect and bipolar transistors. At the same time, it has adopted the main advantages of the two main types of transistors and has found wide application in high-power and high-voltage devices.
Tilegen Abaiuly Kapen
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Digital-Twin-Driven Intelligent Insulated-Gate Bipolar Transistor Production Lines [PDF]
SensorsWith the rapid development of novel energy vehicles, power generation, photovoltaics, and other industries, power electronic devices have gained considerable attention.
Xiao Zhang +6 more
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Simulation Study on 6.5 kV SiC Trench Gate p-Channel Superjunction Insulated Gate Bipolar Transistor [PDF]
MicromachinesThis paper investigates 6.5 kV SiC trench gate p-channel IGBTs using Sentaurus TCAD simulations. The proposed superjunction structure is compared to conventional designs to highlight its advantages.
Kuan-Min Kang +2 more
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Investigation of the Dual Implant Reverse-Conducting SuperJunction Insulated-Gate Bipolar Transistor
IEEE Electron Device Letters, 2019 This letter presents the dual implant superjunction (SJ) trench reverse-conducting (RC) insulated-gate bipolar transistor (IGBT) concept with two implanted SJ pillars in the drift region: one from the cathode side and another from the anode side.
Emma Findlay +2 more
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Development of 8-inch Key Processes for Insulated-Gate Bipolar Transistor
Engineering, 2015 Based on the construction of the 8-inch fabrication line, advanced process technology of 8-inch wafer, as well as the fourth-generation high-voltage double-diffused metal-oxide semiconductor (DMOS+) insulated-gate bipolar transistor (IGBT) technology and
Guoyou Liu, Rongjun Ding, Haihui Luo
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IGBT Overcurrent Capabilities in Resonant Circuits [PDF]
SensorsThe control of IGBT (insulated gate bipolar transistor) and MOSFET (metal oxide semiconductor field effect transistor) is of great interest nowadays as they are widely used in electric vehicles, photovoltaic applications, and a multitude of systems.
Basil Mohammed Al-Hadithi +1 more
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A Feedforward Active Gate Voltage Control Method for SiC MOSFET Driving [PDF]
Journal of Applied Research in Electrical Engineering, 2023 A new active gate drive for Silicon carbide (SiC) metal–oxide–semiconductor field-effect transistor (MOSFET) is proposed in this paper. The SiC MOSFET as an attractive replacement for insulated gate bipolar transistor (IGBT) has been regarded in many ...
Hamidreza Ghorbani +1 more
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Analysis of base characteristics of trench gate field termination IGBT [PDF]
E3S Web of Conferences, 2021 Trench gate structure represents the latest structure of Insulated Gate Bipolar Transistor(IGBT). Because there are great differences in model analysis coordinate system and carrier transport between trench gate structure and planar gate structure, the ...
Wang Bo
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