Results 21 to 30 of about 2,204 (218)
Investigation of the Dual Implant Reverse-Conducting SuperJunction Insulated-Gate Bipolar Transistor
IEEE Electron Device Letters, 2019 This letter presents the dual implant superjunction (SJ) trench reverse-conducting (RC) insulated-gate bipolar transistor (IGBT) concept with two implanted SJ pillars in the drift region: one from the cathode side and another from the anode side.
Antoniou, M, Udrea, F, ,, Findlay, EM
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Numerical Simulation Analysis on a Composite Edge Terminal Reverse Blocking IGBT
Zhongguo dianli, 2022 Insulated gate bipolar transistor (IGBT) is usually used in combination with power diode in power electric circuit because it has no reverse blocking ability.
Lei CUI +4 more
doaj +1 more source
Simulation Study on 6.5 kV SiC Trench Gate p-Channel Superjunction Insulated Gate Bipolar Transistor. [PDF]
Micromachines (Basel)This paper investigates 6.5 kV SiC trench gate p-channel IGBTs using Sentaurus TCAD simulations. The proposed superjunction structure is compared to conventional designs to highlight its advantages.
Kang KM, Hu JW, Huang CF.
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Improving reliability in electric drive systems during IGBT short‐circuit fault
IET Power Electronics, 2021 To improve the reliability of electric drive systems during the insulated‐gate bipolar transistor short‐circuit fault, a control method is proposed for Y‐connected 3‐phase induction motors.
Maryam Naghavi +3 more
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INSULATED-GATE BIPOLAR TRANSISTOR
Chronos, 2022 Insulated-gate bipolar transistor is a cunningly composed hybrid of field-effect and bipolar transistors. At the same time, it has adopted the main advantages of the two main types of transistors and has found wide application in high-power and high-voltage devices.
openaire +1 more source
Comparative study of electro‐thermal characteristics of 4500 V diffusion‐CS IGBT and buried‐CS IGBT
IET Circuits, Devices and Systems, 2021 This article compares the major characteristics of the Insulated Gate Bipolar Transistor with Diffusion Carrier Stored (CS) layer (DCS‐IGBT) and the Insulated Gate Bipolar Transistor with the Buried CS layer (BCS‐IGBT).
Rui Jin +6 more
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Experimental investigation on the single event gate rupture and hardening of the 600 V trench IGBT
AIP Advances, 2021 In this paper, a single particle irradiation experiment is performed on the 600 V trench insulated gate bipolar transistor for the first time. The experimental results show that, at the collector voltages of 100 V and 300 V, single event gate rupture ...
Zhichao Wei +6 more
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Transient electrothermal simulation of power semiconductor devices [PDF]
, 2010 In this paper, a new thermal model based on the Fourier series solution of heat conduction equation has been introduced in detail. 1-D and 2-D Fourier series thermal models have been programmed in MATLAB/Simulink.
Bryant, Angus T. +12 more
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IEEE Journal of the Electron Devices Society, 2020 In this article, a novel bipolar-field-effect composite power transistor, called SiC GCBT (Silicon Carbide Gate-Controlled Bipolar-field-effect Composite Transistor) is presented and studied.
Yipan Zhang, Baoxing Duan, Yintang Yang
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IGBT Overcurrent Capabilities in Resonant Circuits. [PDF]
Sensors (Basel)The control of IGBT (insulated gate bipolar transistor) and MOSFET (metal oxide semiconductor field effect transistor) is of great interest nowadays as they are widely used in electric vehicles, photovoltaic applications, and a multitude of systems.
Al-Hadithi BM, Jimenez M.
europepmc +2 more sources