Results 21 to 30 of about 545,104 (231)

Hardware design of magnetically isolated gate driver using insulated gate bipolar transistor (IGBT) [PDF]

, 2017
This paper presents the hardware design of compact H-bridge magnetically isolated gate driver using Insulated Gate Bipolar Transistor (IGBT) as power device.
Mohd Radzi, Mohd Amran, Abdul Harris, Faranadia, Mohammad Noor, Siti Zaliha, Yusof, Mohd Firdaus, Omar, Ahmad Maliki   +4 more
core   +1 more source

4H-SiC-Based ESD Protection Design With Optimization of Segmented LIGBT for High-Voltage Applications

IEEE Journal of the Electron Devices Society, 2021
4H-SiC is a wide-bandgap material that exhibits excellent high-temperature conductivity and high operating voltage. These characteristics can provide high electrostatic discharge (ESD) robustness in high voltage applications. However, a considerably wide
Kyoung-Il Do, Seung-Hoo Jin, Byung-Seok Lee, Yong-Seo Koo   +3 more
doaj   +1 more source

High-frequency performance of Schottky source/drain silicon pMOS devices [PDF]

, 2008
A radio-frequency performance of 85-nm gate-length p-type Schottky barrier (SB) with PtSi source/drain materials is investigated. The impact of silicidation annealing temperature on the high-frequency behavior of SB MOSFETs is analyzed using an extrinsic
Snyder, J., Leadley, D. R. (David R.), Raskin, J.-P., Larson, J. M., Whall, Terry E., Pailloncy, G., Pearman, D. J.   +6 more
core   +1 more source

Switching characteristic and analysis of insulated-gate bipolar transistor (IGBT) [PDF]

, 2009
Test circuit of Insulated-gate Bipolar Transistor (IGBT-type IRGPC50F); standard ultra fast speed IGBT will be operated when gate voltage, Vg is applied to the Gate-terminal.
Bakhtiar, Ahmad
core   +2 more sources

A new trench gate field stop insulated gate bipolar transistor (IGBT) with a significant reduction in Miller capacitance

Micro & Nano Letters, 2021
In this paper, a new trench‐gate field‐stop insulated gate bipolar transistor (IGBT) structure having improved performances is proposed, investigated and compared with the properties of the conventional trench‐gate field‐stop IGBT.
Yan‐juan Liu, Liang Zhao, Lening Wang, Yupeng Wang   +3 more
doaj   +1 more source

On-Line Measurement of Chip Temperature Based on Blocking Leakage Current of the Insulated-Gate Bipolar Transistor Module in the High-Temperature Reverse-Bias Test

IEEE Access, 2021
In high-temperature reverse-bias test of an insulated-gate bipolar transistor module, the problem of self-heating in chip resulting from power loss arises with high frequency.
Jinyuan Li, Yunong Liu, Yaosheng Li, Zhongyuan Chen, Chunsheng Guo, Hao Li   +5 more
doaj   +1 more source

INSULATED-GATE BIPOLAR TRANSISTOR

Chronos, 2022
Insulated-gate bipolar transistor is a cunningly composed hybrid of field-effect and bipolar transistors. At the same time, it has adopted the main advantages of the two main types of transistors and has found wide application in high-power and high-voltage devices.
openaire   +1 more source

Research on Single-Phase PWM Converter with Reverse Conducting IGBT Based on Loss Threshold Desaturation Control

Energies, 2017
In the application of vehicle power supply and distributed power generation, there are strict requirements for the pulse width modulation (PWM) converter regarding power density and reliability.
Xianjin Huang, Dengwei Chang, Chao Ling, Trillion Q. Zheng   +3 more
doaj   +1 more source

Effect of solder layer crack on the thermal reliability of Insulated Gate Bipolar Transistors

Case Studies in Thermal Engineering, 2019
In order to study the thermal reliability of solder layer fatigue damage in Insulated Gate Bipolar Transistors (IGBT), the Finite Element Analysis (FEA) of the crack damage of the solder layer is described.
Mingxing Du, Qiuya Guo, Ziwei Ouyang, Kexin Wei, William Gerard Hurley   +4 more
doaj   +1 more source

Novel approach toward plasma enhancement in trench-insulated gate bipolar transistors [PDF]

, 2015
In this letter, a trench-insulated gate bipolar transistor (IGBT) design with local charge compensating layers featured at the cathode of the device is presented and analyzed.
Amaratunga, G., Udrea, F., Lophitis, Neophytis, Nistor, I., Rahimo, M., Bauer, F., Bellini, M., Lophitis, N., Antoniou, M., Lophitis, Neophytos   +9 more
core   +1 more source