Results 21 to 30 of about 575,300 (214)

Transient electrothermal simulation of power semiconductor devices [PDF]

, 2010
In this paper, a new thermal model based on the Fourier series solution of heat conduction equation has been introduced in detail. 1-D and 2-D Fourier series thermal models have been programmed in MATLAB/Simulink.
Bryant, Angus T., Mantooth, HA, Hudgins, Jerry L., Du, Bin, Du, B, Palmer, PR, Mantooth, H. Alan, ,, Palmer, Patrick R., Santi, Enrico, Hudgins, JL, Santi, E, Bryant, AT   +12 more
core   +1 more source

STRUCTURAL AND TECHNOLOGICAL PARAMETERS AFFECTING THE BIPOLAR STATIC INDUCTION TRANSISTOR (BSIT ) RESISTANCE

Вестник Дагестанского государственного технического университета: Технические науки, 2016
Aim. The aim of the study is to determine the impact of structural and technological parameters on the resistance of the bipolar static induction transistor.Methods.
T. A. Ismailov, A. R. Shakhmaeva, B. A. Shangereeva   +2 more
doaj   +1 more source

4H-SiC-Based ESD Protection Design With Optimization of Segmented LIGBT for High-Voltage Applications

IEEE Journal of the Electron Devices Society, 2021
4H-SiC is a wide-bandgap material that exhibits excellent high-temperature conductivity and high operating voltage. These characteristics can provide high electrostatic discharge (ESD) robustness in high voltage applications. However, a considerably wide
Kyoung-Il Do, Seung-Hoo Jin, Byung-Seok Lee, Yong-Seo Koo   +3 more
doaj   +1 more source

A High-Power Current Pulse-Generator Using An Insulated-Gate Bipolar-Transistor [PDF]

, 1995
A simple and reliable high power current pulse generator using a commercially available insulated gate bipolar transistor has been designed and constructed.
Park, Kijun, Kim, Jin J., Jin J. Kim, Kijun Park   +3 more
core   +1 more source

A new trench gate field stop insulated gate bipolar transistor (IGBT) with a significant reduction in Miller capacitance

Micro & Nano Letters, 2021
In this paper, a new trench‐gate field‐stop insulated gate bipolar transistor (IGBT) structure having improved performances is proposed, investigated and compared with the properties of the conventional trench‐gate field‐stop IGBT.
Yan‐juan Liu, Liang Zhao, Lening Wang, Yupeng Wang   +3 more
doaj   +1 more source

On-Line Measurement of Chip Temperature Based on Blocking Leakage Current of the Insulated-Gate Bipolar Transistor Module in the High-Temperature Reverse-Bias Test

IEEE Access, 2021
In high-temperature reverse-bias test of an insulated-gate bipolar transistor module, the problem of self-heating in chip resulting from power loss arises with high frequency.
Jinyuan Li, Yunong Liu, Yaosheng Li, Zhongyuan Chen, Chunsheng Guo, Hao Li   +5 more
doaj   +1 more source

Research on Single-Phase PWM Converter with Reverse Conducting IGBT Based on Loss Threshold Desaturation Control

Energies, 2017
In the application of vehicle power supply and distributed power generation, there are strict requirements for the pulse width modulation (PWM) converter regarding power density and reliability.
Xianjin Huang, Dengwei Chang, Chao Ling, Trillion Q. Zheng   +3 more
doaj   +1 more source

A SIMULATION SYSTEM FOR A POWER INSULATED GATE BIPOLAR TRANSISTOR (IGBT) WITH TSUPREM-4 AND MEDICI SIMULATORS

, 1995
International audienceAn effective simulation system with TSUPREM-4 TM and MEDICI TM simulators has been set up in this paper to simulate structures and electrical characteristics, and further to give an optimum design of a power insulated gate bipolar ...
Planson, Dominique, Chante, Jean-Pierre, Zhao, Shan-Qi   +2 more
core   +4 more sources

Novel approach toward plasma enhancement in trench-insulated gate bipolar transistors [PDF]

, 2015
In this letter, a trench-insulated gate bipolar transistor (IGBT) design with local charge compensating layers featured at the cathode of the device is presented and analyzed.
Amaratunga, G., Udrea, F., Lophitis, Neophytis, Nistor, I., Rahimo, M., Bauer, F., Bellini, M., Lophitis, N., Antoniou, M., Lophitis, Neophytos   +9 more
core   +1 more source

Scaling Design Effects on Surface Buffer IGBT Characteristics

IEEE Journal of the Electron Devices Society, 2022
Scaling design effects on surface buffer (SB) insulated gate bipolar transistor (IGBT) is analyzed not only for power loss reduction but also for switching controllability and robustness using TCAD simulation.
Wataru Saito, Shin-Ichi Nishizawa
doaj   +1 more source