Four Hybrid Gates SOI Lateral Insulated Gate Bipolar Transistor With Improved Carrier Controllability [PDF]
IEEE Journal of the Electron Devices Society, 2023 Easy inter-connection is a crucial advantage of the single-chip power ICs, which makes power devices with multiple ports easy to improve carrier controllability without increasing process difficulty.
Jie Ma +8 more
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A novel trench clustered insulated gate bipolar transistor (TCIGBT) [PDF]
IEEE Electron Device Letters, 2000 A new trench clustered insulated gate bipolar transistor (TCIGBT) is reported. In this device, a multitude of UMOS cathode cells is enclosed within a common n-well and p-well. The TCIGBT provides a unique "self-clamping" feature to protect the trenches from high electric fields. The simulation results based on 1.2 kV nonpunchthrough technology indicate
O. Spulber +7 more
openaire +3 more sources
Low Loss Insulated Gate Bipolar Transistor With Electron Injection (EI-IGBT)
IEEE Journal of the Electron Devices Society, 2017 A new type insulated gate bipolar transistor (IGBT) with electron injection (EI-IGBT) is proposed in which an N+-buried layer is implemented in P-base region.
Wanjun Chen +10 more
doaj +2 more sources
Simulation Study of 4H-SiC Trench Insulated Gate Bipolar Transistor with Low Turn-Off Loss. [PDF]
Micromachines (Basel), 2019 Mao HK, Wang Y, Wu X, Su FW.
europepmc +3 more sources
Analysis of base characteristics of trench gate field termination IGBT [PDF]
E3S Web of Conferences, 2021 Trench gate structure represents the latest structure of Insulated Gate Bipolar Transistor(IGBT). Because there are great differences in model analysis coordinate system and carrier transport between trench gate structure and planar gate structure, the ...
Wang Bo
doaj +1 more source
Analysis of junction capacitance characteristics of trench gate IGBT [PDF]
E3S Web of Conferences, 2021 Trench gate field termination IGBT represents the latest structure of insulated gate bipolar transistor (IGBT). Because the internal current of IGBT includes the charging and discharging current of gate capacitance and internal junction capacitance ...
Wang Bo
doaj +1 more source
Numerical Simulation Analysis on a Composite Edge Terminal Reverse Blocking IGBT
Zhongguo dianli, 2022 Insulated gate bipolar transistor (IGBT) is usually used in combination with power diode in power electric circuit because it has no reverse blocking ability.
Lei CUI +4 more
doaj +1 more source
Improving reliability in electric drive systems during IGBT short‐circuit fault
IET Power Electronics, 2021 To improve the reliability of electric drive systems during the insulated‐gate bipolar transistor short‐circuit fault, a control method is proposed for Y‐connected 3‐phase induction motors.
Maryam Naghavi +3 more
doaj +1 more source
Insulated Gate Bipolar Transistor Solder Layer Defect Detection Research Based on Improved YOLOv5
Applied Sciences, 2022 The expanding market scale of the insulated gate bipolar transistor as a new type of power semiconductor device has higher insulated gate bipolar transistor soldering requirements. However, there are some small bubbles difficult to detect.
Qiying Ling +3 more
doaj +1 more source
Comparative study of electro‐thermal characteristics of 4500 V diffusion‐CS IGBT and buried‐CS IGBT
IET Circuits, Devices and Systems, 2021 This article compares the major characteristics of the Insulated Gate Bipolar Transistor with Diffusion Carrier Stored (CS) layer (DCS‐IGBT) and the Insulated Gate Bipolar Transistor with the Buried CS layer (BCS‐IGBT).
Rui Jin +6 more
doaj +1 more source