Results 31 to 40 of about 2,204 (218)

Hardware design of magnetically isolated gate driver using insulated gate bipolar transistor (IGBT) [PDF]

, 2017
This paper presents the hardware design of compact H-bridge magnetically isolated gate driver using Insulated Gate Bipolar Transistor (IGBT) as power device.
Mohd Radzi, Mohd Amran, Abdul Harris, Faranadia, Mohammad Noor, Siti Zaliha, Yusof, Mohd Firdaus, Omar, Ahmad Maliki   +4 more
core   +1 more source

STRUCTURAL AND TECHNOLOGICAL PARAMETERS AFFECTING THE BIPOLAR STATIC INDUCTION TRANSISTOR (BSIT ) RESISTANCE

Вестник Дагестанского государственного технического университета: Технические науки, 2016
Aim. The aim of the study is to determine the impact of structural and technological parameters on the resistance of the bipolar static induction transistor.Methods.
T. A. Ismailov, A. R. Shakhmaeva, B. A. Shangereeva   +2 more
doaj   +1 more source

4H-SiC-Based ESD Protection Design With Optimization of Segmented LIGBT for High-Voltage Applications

IEEE Journal of the Electron Devices Society, 2021
4H-SiC is a wide-bandgap material that exhibits excellent high-temperature conductivity and high operating voltage. These characteristics can provide high electrostatic discharge (ESD) robustness in high voltage applications. However, a considerably wide
Kyoung-Il Do, Seung-Hoo Jin, Byung-Seok Lee, Yong-Seo Koo   +3 more
doaj   +1 more source

Novel approach toward plasma enhancement in trench-insulated gate bipolar transistors [PDF]

, 2015
In this letter, a trench-insulated gate bipolar transistor (IGBT) design with local charge compensating layers featured at the cathode of the device is presented and analyzed.
Amaratunga, G., Udrea, F., Lophitis, Neophytis, Nistor, I., Rahimo, M., Bauer, F., Bellini, M., Lophitis, N., Antoniou, M., Lophitis, Neophytos   +9 more
core   +1 more source

A new trench gate field stop insulated gate bipolar transistor (IGBT) with a significant reduction in Miller capacitance

Micro & Nano Letters, 2021
In this paper, a new trench‐gate field‐stop insulated gate bipolar transistor (IGBT) structure having improved performances is proposed, investigated and compared with the properties of the conventional trench‐gate field‐stop IGBT.
Yan‐juan Liu, Liang Zhao, Lening Wang, Yupeng Wang   +3 more
doaj   +1 more source

On-Line Measurement of Chip Temperature Based on Blocking Leakage Current of the Insulated-Gate Bipolar Transistor Module in the High-Temperature Reverse-Bias Test

IEEE Access, 2021
In high-temperature reverse-bias test of an insulated-gate bipolar transistor module, the problem of self-heating in chip resulting from power loss arises with high frequency.
Jinyuan Li, Yunong Liu, Yaosheng Li, Zhongyuan Chen, Chunsheng Guo, Hao Li   +5 more
doaj   +1 more source

Research on Single-Phase PWM Converter with Reverse Conducting IGBT Based on Loss Threshold Desaturation Control

Energies, 2017
In the application of vehicle power supply and distributed power generation, there are strict requirements for the pulse width modulation (PWM) converter regarding power density and reliability.
Xianjin Huang, Dengwei Chang, Chao Ling, Trillion Q. Zheng   +3 more
doaj   +1 more source

Failure precursors for insulated gate bipolar transistors (IGBTs) [PDF]

9th International Seminar on Power Semiconductors (ISPS 2008), 2008
Failure precursors indicate changes in a measured variable that can be associated with impending failure. By identifying precursors to failure and by monitoring them, system failures can be predicted and actions can be taken to mitigate their effects. In this study, three potential failure precursor candidates, threshold voltage, transconductance, and ...
N. Patil, D. Das, K. Goebel, M. Pecht
openaire   +1 more source

Effect of solder layer crack on the thermal reliability of Insulated Gate Bipolar Transistors

Case Studies in Thermal Engineering, 2019
In order to study the thermal reliability of solder layer fatigue damage in Insulated Gate Bipolar Transistors (IGBT), the Finite Element Analysis (FEA) of the crack damage of the solder layer is described.
Mingxing Du, Qiuya Guo, Ziwei Ouyang, Kexin Wei, William Gerard Hurley   +4 more
doaj   +1 more source

Scaling Design Effects on Surface Buffer IGBT Characteristics

IEEE Journal of the Electron Devices Society, 2022
Scaling design effects on surface buffer (SB) insulated gate bipolar transistor (IGBT) is analyzed not only for power loss reduction but also for switching controllability and robustness using TCAD simulation.
Wataru Saito, Shin-Ichi Nishizawa
doaj   +1 more source