Results 31 to 40 of about 575,300 (214)

A Novel Shielded IGBT (SIGBT) With Integrated Diodes

IEEE Journal of the Electron Devices Society, 2020
A novel 3.3 kV Shielded Insulated Gate Bipolar Transistor (SIGBT) is proposed in this paper. Unlike the partly shielded N-injector of the diode-clamped TIGBT, which is the carrier store layer, the SIGBT features a diode-clamped P-layer to completely ...
Rongxin Chen, Hao Hu, Yuan Lin, Xing Bi Chen   +3 more
doaj   +1 more source

A geophysical pulse voltage generator for seismic and electric exploration of the subsurface [PDF]

Геосистемы переходных зон, 2021
This article describes the process and results of the development and testing of a cost-effective, portable, safe to move by air geophysical pulse voltage generator for seismic exploration of the subsurface.
Ilia P. Dudchenko, Dmitry V. Kostylev, Sergey A. Gulyakov, Nikolay S. Stovbun   +3 more
doaj   +1 more source

Switching characteristic and analysis of insulated-gate bipolar transistor (IGBT) [PDF]

, 2009
Test circuit of Insulated-gate Bipolar Transistor (IGBT-type IRGPC50F); standard ultra fast speed IGBT will be operated when gate voltage, Vg is applied to the Gate-terminal.
Bakhtiar, Ahmad
core   +2 more sources

Insights into radiation displacement defect in an insulated-gate bipolar transistor

AIP Advances, 2021
The effects of the radiation displacement defect on an insulated-gate bipolar transistor are investigated using the computer-aided design simulation technology.
Kihyun Kim, Jungsik Kim
doaj   +1 more source

Design Solutions for Device Structures of Bipolar Transistors with an Insulated Gate and a Vertical Channel Arrangement

Доклады Белорусского государственного университета информатики и радиоэлектроники
This work presents the results of computer simulations of the operational characteristics of vertical channel Insulated Gate Bipolar Transistor (IGBT) device structures designed according to the following technologies: Trench-IGBT, Superjunction Trench ...
Trong Thanh Nguyen, Dao Dinh Ha, I. Yu. Lovshenko, V. R. Stempitsky   +3 more
doaj   +1 more source

INSULATED-GATE BIPOLAR TRANSISTOR

Chronos, 2022
Insulated-gate bipolar transistor is a cunningly composed hybrid of field-effect and bipolar transistors. At the same time, it has adopted the main advantages of the two main types of transistors and has found wide application in high-power and high-voltage devices.
openaire   +1 more source

Low Loss Insulated Gate Bipolar Transistor With Electron Injection (EI-IGBT)

IEEE Journal of the Electron Devices Society, 2017
A new type insulated gate bipolar transistor (IGBT) with electron injection (EI-IGBT) is proposed in which an N+-buried layer is implemented in P-base region.
Wanjun Chen, Hong Tao, Lunfei Lou, Chao Liu, Wu Cheng, Xuefeng Tang, Hongquan Liu, Qi Zhou, Xiaochuan Deng, Zhaoji Li, Bo Zhang   +10 more
doaj   +1 more source

Evaluation of the turn‐off transient controllability for high‐power IGBT modules

IET Power Electronics, 2022
The efficient and flexible conversion of electrical energy is increasingly accomplished by megawatt insulated gate bipolar transistor (IGBT) modules. Their dynamic performance is influenced by the gate driver control, operating points and the switching ...
Kun Tan, Bing Ji, Jun Wang, Wenjuan Deng, Daohui Li, Zhiqiang Wang, Zheng Liu, Wenping Cao   +7 more
doaj   +1 more source

Nonparametric Model-Based Online Junction Temperature and State-of-Health Estimation for Insulated Gate Bipolar Transistors

IEEE Access, 2021
Insulated gate bipolar transistor (IGBT) is widely used in power equipment, it generally works in complex circuit profiles and it is very difficult to measure or predict the thermal parameters of the module in real-time and evaluate the corresponding ...
Xiangxiang Liu, Tianlei Jiao, Diganta Das, Ijaz Haider Naqvi, Michael Pecht   +4 more
doaj   +1 more source

Light‐Induced Field‐Tunneling Synapses in Solution‐Processed Van Der Waals Heterostructures for Scalable, Retina‐Inspired Optical Sensing

Advanced Functional Materials, EarlyView.
A scalable, solution‐processed WSe2/ZrO2‐x van der Waals heterostructure realizes a light‐induced field‐tunneling synapse (LIFTS) that activates exclusively under bright illumination, emulating the photopic adaptation of the human retina at the device level.
Kijeong Nam, Jihyun Kim, Soobeen Ji, In Soo Kim, Sejin Kim, Eungseon Yeon, Do Kyung Hwang, Iva Plutnarová, Zdeněk Sofer, Sang Min Won, Joohoon Kang   +10 more
wiley   +1 more source