Results 31 to 40 of about 17,120 (221)
Reverse-Conducting Insulated Gate Bipolar Transistor: A Review of Current Technologies
IEEE Transactions on Electron Devices, 2019 The reverse-conducting insulated gate bipolar transistor (RC-IGBT) has several benefits over a separate IGBT and diode solution and has the potential to become the dominant device within many power electronic applications; including, but not limited to ...
E. Findlay, F. Udrea
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Scaling Design Effects on Surface Buffer IGBT Characteristics
IEEE Journal of the Electron Devices Society, 2022 Scaling design effects on surface buffer (SB) insulated gate bipolar transistor (IGBT) is analyzed not only for power loss reduction but also for switching controllability and robustness using TCAD simulation.
Wataru Saito, Shin-Ichi Nishizawa
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A Novel Shielded IGBT (SIGBT) With Integrated Diodes
IEEE Journal of the Electron Devices Society, 2020 A novel 3.3 kV Shielded Insulated Gate Bipolar Transistor (SIGBT) is proposed in this paper. Unlike the partly shielded N-injector of the diode-clamped TIGBT, which is the carrier store layer, the SIGBT features a diode-clamped P-layer to completely ...
Rongxin Chen +3 more
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A geophysical pulse voltage generator for seismic and electric exploration of the subsurface [PDF]
Геосистемы переходных зон, 2021 This article describes the process and results of the development and testing of a cost-effective, portable, safe to move by air geophysical pulse voltage generator for seismic exploration of the subsurface.
Ilia P. Dudchenko +3 more
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Insights into radiation displacement defect in an insulated-gate bipolar transistor
AIP Advances, 2021 The effects of the radiation displacement defect on an insulated-gate bipolar transistor are investigated using the computer-aided design simulation technology.
Kihyun Kim, Jungsik Kim
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The use of acoustic emission elastic waves as diagnosis method for insulated-gate bipolar transistor
, 2020 The article describes research into the use of acoustic emission elastic waves (AE) for diagnosing insulated-gated bipolar transistors (IGBTs). Currently used in many modern shipboard power electronic systems, IGBTs are crucial components required to ...
A. Bejger, M. Kozak, Radosław Gordon
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Доклады Белорусского государственного университета информатики и радиоэлектроникиThis work presents the results of computer simulations of the operational characteristics of vertical channel Insulated Gate Bipolar Transistor (IGBT) device structures designed according to the following technologies: Trench-IGBT, Superjunction Trench ...
Trong Thanh Nguyen +3 more
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Evaluation of the turn‐off transient controllability for high‐power IGBT modules
IET Power Electronics, 2022 The efficient and flexible conversion of electrical energy is increasingly accomplished by megawatt insulated gate bipolar transistor (IGBT) modules. Their dynamic performance is influenced by the gate driver control, operating points and the switching ...
Kun Tan +7 more
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IEEE Access, 2021 Insulated gate bipolar transistor (IGBT) is widely used in power equipment, it generally works in complex circuit profiles and it is very difficult to measure or predict the thermal parameters of the module in real-time and evaluate the corresponding ...
Xiangxiang Liu +4 more
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Advanced Functional Materials, EarlyView.Monolithic UV‐ozone oxidation of Ta forms an ultrathin Ta2O5/TaOx bilayer enabling resistive switching with a vertical defect gradient. A stoichiometric surface layer over an oxygen‐deficient sublayer promotes localized filament nucleation near the top interface, enabling low‐voltage operation, and reduced cycle‐to‐cycle variability.
Seunghoon Yang +11 more
wiley +1 more source