Results 1 to 10 of about 1,395 (225)
Adjoint method for the optimization of insulated gate bipolar transistors [PDF]
AIP Advances, 2019 A mathematical algorithm is presented for the computation of optimum doping profiles that maximize the breakdown voltage and on-state current in insulated gate bipolar transistors (IGBT).
C. Zhu, P. Andrei
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Insulated Gate Bipolar Transistor Solder Layer Defect Detection Research Based on Improved YOLOv5 [PDF]
Applied Sciences, 2022 The expanding market scale of the insulated gate bipolar transistor as a new type of power semiconductor device has higher insulated gate bipolar transistor soldering requirements. However, there are some small bubbles difficult to detect.
Qiying Ling +3 more
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Effect of solder layer crack on the thermal reliability of Insulated Gate Bipolar Transistors
Case Studies in Thermal Engineering, 2019 In order to study the thermal reliability of solder layer fatigue damage in Insulated Gate Bipolar Transistors (IGBT), the Finite Element Analysis (FEA) of the crack damage of the solder layer is described.
Mingxing Du +4 more
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IGBT Overcurrent Capabilities in Resonant Circuits [PDF]
SensorsThe control of IGBT (insulated gate bipolar transistor) and MOSFET (metal oxide semiconductor field effect transistor) is of great interest nowadays as they are widely used in electric vehicles, photovoltaic applications, and a multitude of systems.
Basil Mohammed Al-Hadithi +1 more
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Influence of Thermal Phenomena on the Characteristics of Selected Electronics Networks
Energies, 2021 This paper presents the results of investigations on the influence of thermal phenomena—self-heating in semiconductor devices and mutual thermal couplings between them—on the characteristics of selected electronics networks containing bipolar transistors
Krzysztof Górecki +2 more
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Failure analysis and lifetime assessment of IGBT power modules at low temperature stress cycles
IET Power Electronics, 2021 Lifetime models of high‐power Insulated Gate Bipolar Transistors modules express the number of cycles to end of life as a function of stress parameters.
Magnar Hernes +3 more
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A four‐step control for IGBT switching improvement using an active voltage gate driver
IET Power Electronics, 2022 Gate drivers form an essential interface between the high power transistors and low voltage control circuits in power converters to govern the transistor switching operations and maintain other ancillary functions.
Chen Li +5 more
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IEEE Access, 2022 The main obstacle for the further development and commercialization of solid-state DC circuit breakers is the high ON-state power losses caused by the active power semiconductor devices. This paper presents an experimental evaluation of the electrical ON-
Andreas Giannakis, Dimosthenis Peftitsis
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INSULATED-GATE BIPOLAR TRANSISTOR
Chronos, 2022 Insulated-gate bipolar transistor is a cunningly composed hybrid of field-effect and bipolar transistors. At the same time, it has adopted the main advantages of the two main types of transistors and has found wide application in high-power and high-voltage devices.
openaire +1 more source
IET Power Electronics, 2023 Capacitance and Insulated gate bipolar transistor (IGBT) junction temperature are two critical healthy parameters for modular multilevel converters (MMC) sub‐modules (SMs) condition monitoring.
Wuyu Zhang +4 more
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