Results 21 to 30 of about 7,414 (228)

Time-Variant Reliability Optimization for Stress Balance in Press-Pack Insulated Gate Bipolar Transistors

open access: yesIEEE Access, 2023
Stress imbalance significantly affects the performance of a press-pack insulated gate bipolar transistor (IGBT). Time-variant loads and conditions lead to the stress fluctuations, exacerbating the impacts.
Hangyang Li   +6 more
doaj   +1 more source

Probabilistic Monte-Carlo method for modelling and prediction of electronics component life [PDF]

open access: yes, 2014
Power electronics are widely used in electric vehicles, railway locomotive and new generation aircrafts. Reliability of these components directly affect the reliability and performance of these vehicular platforms.
Alghassi, Ali   +3 more
core   +1 more source

Multi-mode kernel principal component analysis–based incipient fault detection for pulse width modulated inverter of China Railway High-speed 5

open access: yesAdvances in Mechanical Engineering, 2017
This article deals with incipient fault of insulated-gate bipolar transistors to improve the safety of traction systems of China Railway High-speed 5. Combining with the pulse width modulated strategy which makes signals variate periodically, the multi ...
Hongtian Chen   +3 more
doaj   +1 more source

Nonparametric Model-Based Online Junction Temperature and State-of-Health Estimation for Insulated Gate Bipolar Transistors

open access: yesIEEE Access, 2021
Insulated gate bipolar transistor (IGBT) is widely used in power equipment, it generally works in complex circuit profiles and it is very difficult to measure or predict the thermal parameters of the module in real-time and evaluate the corresponding ...
Xiangxiang Liu   +4 more
doaj   +1 more source

Current sharing control strategy for IGBTs connected in parallel [PDF]

open access: yes, 2016
This work focuses on current sharing between punch-through insulated gate bipolar transistors (IGBTs) connected in parallel and evaluates the mechanisms that allow overall current balancing. Two different control strategies are presented.
Pérez Delgado, Raul   +2 more
core   +2 more sources

A predictive control with flying capacitor balancing of a multicell active power filter [PDF]

open access: yes, 2008
Unlike traditional inverters, multicell inverters have the following advantages: lower switching frequency, high number of output levels, and less voltage constraints on the insulated-gate bipolar transistors.
Defaÿ, François   +2 more
core   +1 more source

Marx-Type solid-state bipolar modulator topologies: Performance comparison [PDF]

open access: yes, 2012
The operation of generalized Marx-type solid-state bipolar modulators is discussed and compared with simplified Marx-derived circuits, to evaluate their capability to deal with various load conditions. A comparative analysis on the number of switches per
Canacsinh, Hiren   +2 more
core   +1 more source

Design and implementation of 30kW 200/900V LCL modular multilevel based DC/DC converter for high power applications [PDF]

open access: yes, 2016
This paper presents the design, development and testing of a 30kW, 200V/900V modular multilevel converter (MMC) based DC/DC converter prototype. An internal LCL circuit is used to provide voltage stepping and fault tolerance property.
Aboushady, A.   +3 more
core   +2 more sources

Junction Temperature Optical Sensing Techniques for Power Switching Semiconductors: A Review

open access: yesMicromachines, 2023
Recent advancements in power electronic switches provide effective control and operational stability of power grid systems. Junction temperature is a crucial parameter of power-switching semiconductor devices, which needs monitoring to facilitate ...
Ridwanullahi Isa   +4 more
doaj   +1 more source

STRUCTURAL AND TECHNOLOGICAL PARAMETERS AFFECTING THE BIPOLAR STATIC INDUCTION TRANSISTOR (BSIT ) RESISTANCE

open access: yesВестник Дагестанского государственного технического университета: Технические науки, 2016
Aim. The aim of the study is to determine the impact of structural and technological parameters on the resistance of the bipolar static induction transistor.Methods.
T. A. Ismailov   +2 more
doaj   +1 more source

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