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Electrical engineering & Electromechanics, 2023 Introduction. Recently, the number of high and medium voltage applications has increased dramatically. The connection between these different applications requires series-parallel combinations of power semiconductors.
A. Abdellah, M. Larbi, D. Toumi
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IEEE Access, 2023 Stress imbalance significantly affects the performance of a press-pack insulated gate bipolar transistor (IGBT). Time-variant loads and conditions lead to the stress fluctuations, exacerbating the impacts.
Hangyang Li +6 more
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Advances in Mechanical Engineering, 2017 This article deals with incipient fault of insulated-gate bipolar transistors to improve the safety of traction systems of China Railway High-speed 5. Combining with the pulse width modulated strategy which makes signals variate periodically, the multi ...
Hongtian Chen +3 more
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IEEE Access, 2021 Insulated gate bipolar transistor (IGBT) is widely used in power equipment, it generally works in complex circuit profiles and it is very difficult to measure or predict the thermal parameters of the module in real-time and evaluate the corresponding ...
Xiangxiang Liu +4 more
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Failure precursors for insulated gate bipolar transistors (IGBTs) [PDF]
9th International Seminar on Power Semiconductors (ISPS 2008), 2008 Failure precursors indicate changes in a measured variable that can be associated with impending failure. By identifying precursors to failure and by monitoring them, system failures can be predicted and actions can be taken to mitigate their effects. In this study, three potential failure precursor candidates, threshold voltage, transconductance, and ...
N. Patil, D. Das, K. Goebel, M. Pecht
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Identification of the degradation state for condition-based maintenance of insulated gate bipolar transistors: A self-organizing map approach [PDF]
, 2016 This paper presents an approach for the detection of the degradation onset and the identification of the degradation state of industrial components with inhomogeneous degradation behaviors due to the effects of multiple, possibly competing, degradation ...
BARALDI, PIERO +6 more
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Вестник Дагестанского государственного технического университета: Технические науки, 2016 Aim. The aim of the study is to determine the impact of structural and technological parameters on the resistance of the bipolar static induction transistor.Methods.
T. A. Ismailov +2 more
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Analysis of Trench Insulated Gate Bipolar Transistors [PDF]
, 2016 This thesis is focused on the selection and optimalization of suitable analytical methods for study of TIGBT (Trench Insulated Gate Bipolar Transistor) structures with a use of methods, that depict material composition of the studied sample.
Karlovský, Juraj
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Junction Temperature Optical Sensing Techniques for Power Switching Semiconductors: A Review
Micromachines, 2023 Recent advancements in power electronic switches provide effective control and operational stability of power grid systems. Junction temperature is a crucial parameter of power-switching semiconductor devices, which needs monitoring to facilitate ...
Ridwanullahi Isa +4 more
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GA-LSTM-Based Degradation Prediction for IGBTs in Power Electronic Systems
EnergiesThe reliability and lifetime of insulated gate bipolar transistors (IGBTs) are critical to ensuring the stability and safety of power electronic systems.
Yunfeng Qiu, Zehong Li, Shan Tian
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