Results 1 to 10 of about 252,126 (263)
Compared with Si devices, GaN HEMT has lower on-resistance, lower junction capacitance, higher switching frequency, higher switching speed and higher junction temperature capability. It is widely used in automotive, aerospace and other fields.
Haihong Qin +5 more
doaj +3 more sources
A Junction Temperature Prediction Method Based on Multivariate Linear Regression Using Current Fall Characteristics of SiC MOSFETs [PDF]
The junction temperature (Tj) is a key parameter reflecting the thermal behavior of Silicon carbide (SiC) MOSFETs and is essential for condition monitoring and reliability assessment in power electronic systems.
Haihong Qin +5 more
doaj +2 more sources
Machine Learning to Predict Junction Temperature Based on Optical Characteristics in Solid-State Lighting Devices: A Test on WLEDs [PDF]
While junction temperature control is an indispensable part of having reliable solid-state lighting, there is no direct method to measure its quantity. Among various methods, temperature-sensitive optical parameter-based junction temperature measurement ...
Mohammad Azarifar +4 more
doaj +2 more sources
LED Junction Temperature Measurement: From Steady State to Transient State [PDF]
In this review, we meticulously analyze and consolidate various techniques used for measuring the junction temperature of light-emitting diodes (LEDs) by examining recent advancements in the field as reported in the literature.
Xinyu Zhao +4 more
doaj +2 more sources
A Technique for Improving the Precision of the Direct Measurement of Junction Temperature in Power Light-Emitting Diodes [PDF]
Extending the lifetime of power light-emitting diodes (LEDs) is achievable if proper control methods are implemented to reduce the side effects of an excessive junction temperature, TJ. The accuracy of state-of-the-art LED junction temperature monitoring
Demetrio Iero +6 more
doaj +2 more sources
As an important part of photovoltaic (PV) system, the reliability of PV inverter is the key to ensure the safe and reliable operation of PV power generation system.
Bo Zhang +4 more
doaj +3 more sources
Room-temperature single-electron junction. [PDF]
The design, realization, and test performances of an electronic junction based on single-electron phenomena that works in the air at room temperature are hereby reported. The element consists of an electrochemically etched sharp tungsten stylus over whose tip a nanometer-size crystal was synthesized.
Facci P +3 more
openaire +4 more sources
This article concerns the indirect thermographic measurement of the junction temperature of a D00-250-10 semiconductor diode. Herein, we show how the temperature of the semiconductor junction was estimated on the basis of the heat sink temperature.
Krzysztof Dziarski +3 more
doaj +1 more source
The temperature-sensitive electrical parameter (TSEP) method is widely used in the extraction and prediction of junction temperature (Tj) of power semiconductor devices.
Lingfeng Shao +6 more
doaj +1 more source
The insulated gate bipolar transistor (IGBT), one of the most vulnerable component, is one of the most precious central component in the converter interior.
Lingfeng Shao, Yi Hu, Guoqing Xu
doaj +1 more source

