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A Junction Temperature Prediction Method Based on Multivariate Linear Regression Using Current Fall Characteristics of SiC MOSFETs [PDF]
SensorsThe junction temperature (Tj) is a key parameter reflecting the thermal behavior of Silicon carbide (SiC) MOSFETs and is essential for condition monitoring and reliability assessment in power electronic systems.
Haihong Qin +5 more
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Machine Learning to Predict Junction Temperature Based on Optical Characteristics in Solid-State Lighting Devices: A Test on WLEDs [PDF]
Micromachines, 2022 While junction temperature control is an indispensable part of having reliable solid-state lighting, there is no direct method to measure its quantity. Among various methods, temperature-sensitive optical parameter-based junction temperature measurement ...
Mohammad Azarifar +4 more
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LED Junction Temperature Measurement: From Steady State to Transient State [PDF]
SensorsIn this review, we meticulously analyze and consolidate various techniques used for measuring the junction temperature of light-emitting diodes (LEDs) by examining recent advancements in the field as reported in the literature.
Xinyu Zhao +4 more
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Non-Contact Measurement of LED Junction Temperature Based on Normalized Integral Width (NIW) of the Emission Spectrum [PDF]
SensorsJunction temperature (Tj) is a key parameter that directly governs the optical performance and operational reliability of light-emitting diodes (LEDs), which have become indispensable in modern illumination and display systems.
Fuchun Jiang, Yunming Qiu
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Energy Reports, 2023 Compared with Si devices, GaN HEMT has lower on-resistance, lower junction capacitance, higher switching frequency, higher switching speed and higher junction temperature capability. It is widely used in automotive, aerospace and other fields.
Haihong Qin +5 more
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Room-temperature single-electron junction. [PDF]
Proceedings of the National Academy of Sciences, 1996 The design, realization, and test performances of an electronic junction based on single-electron phenomena that works in the air at room temperature are hereby reported. The element consists of an electrochemically etched sharp tungsten stylus over whose tip a nanometer-size crystal was synthesized.
Facci P +3 more
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Energies, 2022 This article concerns the indirect thermographic measurement of the junction temperature of a D00-250-10 semiconductor diode. Herein, we show how the temperature of the semiconductor junction was estimated on the basis of the heat sink temperature.
Krzysztof Dziarski +3 more
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Energy Reports, 2022 As an important part of photovoltaic (PV) system, the reliability of PV inverter is the key to ensure the safe and reliable operation of PV power generation system.
Bo Zhang +4 more
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Energy Reports, 2022 The temperature-sensitive electrical parameter (TSEP) method is widely used in the extraction and prediction of junction temperature (Tj) of power semiconductor devices.
Lingfeng Shao +6 more
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A Hybrid Model of Turn-Off Loss and Turn-Off Time for Junction Temperature Extraction
IEEE Journal of the Electron Devices Society, 2022 Temperature-sensitive electrical parameter (TSEP) approaches are widely employed in the junction temperature (Tj) extraction and prediction of power semiconductor devices.
Lingfeng Shao, Guoqing Xu, Pengbo Li
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