Results 21 to 30 of about 251,703 (265)
Thermoelectricity in atom-sized junctions at room temperatures [PDF]
Atomic and molecular junctions are an emerging class of thermoelectric materials that exploit quantum confinement effects to obtain an enhanced figure of merit. An important feature in such nanoscale systems is that the electron and heat transport become highly sensitive to the atomic configurations.
Makusu Tsutsui +3 more
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Enhanced Cooling of LED Filament Bulbs Using an Embedded Tri-Needle/Ring Ionic Wind Device
Improving the heat dissipation ability for light-emitting diode (LED) filament bulb is very difficult. A tri-needle/ring ionic wind generator was developed to improve the heat dissipation condition of bulbs.
Chunlin Xu +6 more
doaj +1 more source
The temperature-sensitive electrical parameter (TSEP) method is widely used in the extraction and prediction of junction temperature (Tj) of power semiconductor devices.
Lingfeng Shao +6 more
doaj +1 more source
A Hybrid Model of Turn-Off Loss and Turn-Off Time for Junction Temperature Extraction
Temperature-sensitive electrical parameter (TSEP) approaches are widely employed in the junction temperature (Tj) extraction and prediction of power semiconductor devices.
Lingfeng Shao, Guoqing Xu, Pengbo Li
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High-temperature anomaly of the conductance of a tunnel junction
4 pages, 2 ...
Göppert, Georg +2 more
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C-type thermocouples are widely used to measure rich combustions; however, the measured temperature, i.e., the thermocouple junction temperature, is not equal to the gas temperature.
Linqing Zhang +4 more
doaj +1 more source
Optical determination of the junction temperature of OLEDs [PDF]
Abstract This paper describes a novel optical measurement technique for the in situ determination of the spatial temperature distribution at the organic layer level in large-area organic light-emitting diodes (OLEDs). The local junction temperature of OLEDs is a very important factor with respect to the luminance uniformity. Moreover the variation of
Buytaert, Jan +3 more
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In a converter of actual working condition, the change in the current and voltage of the power device will cause the junction temperature to fluctuate greatly. This device is subjected to high thermal stress due to the change in the junction temperature.
Junke Wu +5 more
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ВИЗНАЧЕННЯ ДОДАТКУ ДО ЗНАЧЕННЯ ТЕПЛОВОГО ОПОРУ СИЛОВИХ НАПІВПРОВІДНИКОВИХ ПРИЛАДІВ
Ця стаття присвячена обгрунтуванню методики визначення додатку до значення теплового опору напівпровідникового приладу для постійного струму, який дає можливість визначити максимальну температуру напівпровідникової структури приладу при навантажені ...
V. S. Ostrenko
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Research on IGBT junction temperature model based on united-parameters
The insulated gate bipolar transistor (IGBT) is the most expensive central component in the converter interior, but it is also one of the most vulnerable to failure. The failure of power electronic system is mainly due to temperature change.
Lingfeng Shao +3 more
doaj +1 more source

