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Research Progress on Insulated Gate Bipolar Transistor (IGBT) Modules [PDF]
MicromachinesWith the rapid advancement of social productivity and technological innovation, the insulated gate bipolar transistor (IGBT) has emerged as a cornerstone in modern power electronic devices [...]
Peisheng Liu, Yaohui Deng
doaj +4 more sources
Hardware design of magnetically isolated gate driver using Insulated Gate Bipolar Transistor (IGBT) [PDF]
2017 IEEE 8th Control and System Graduate Research Colloquium (ICSGRC), 2017 This paper presents the hardware design of compact H-bridge magnetically isolated gate driver using Insulated Gate Bipolar Transistor (IGBT) as power device.
Siti Zaliha Mohammad Noor +1 more
exaly +5 more sources
Insulated gate bipolar transistor (IGBT) modeling using IG-SPICE
IEEE Transactions on Industry Applications, 1994 A physics-based model for the insulated gate bipolar transistor (IGBT) is implemented into the widely available circuit simulation package IG-SPICE. Based on analytical equations describing the semiconductor-physics, the model accurately describes the nonlinear junction capacitances, moving boundaries, recombination, and carrier scattering, and ...
A R Hefner, D Y Chen
exaly +3 more sources
Low Loss Insulated Gate Bipolar Transistor With Electron Injection (EI-IGBT)
IEEE Journal of the Electron Devices Society, 2017 A new type insulated gate bipolar transistor (IGBT) with electron injection (EI-IGBT) is proposed in which an N+-buried layer is implemented in P-base region.
Wanjun Chen +10 more
doaj +4 more sources
A new trench gate field stop insulated gate bipolar transistor (IGBT) with a significant reduction in Miller capacitance [PDF]
Micro & Nano Letters, 2021 In this paper, a new trench‐gate field‐stop insulated gate bipolar transistor (IGBT) structure having improved performances is proposed, investigated and compared with the properties of the conventional trench‐gate field‐stop IGBT.
Yan‐juan Liu +3 more
doaj +2 more sources
IGBT Overcurrent Capabilities in Resonant Circuits [PDF]
SensorsThe control of IGBT (insulated gate bipolar transistor) and MOSFET (metal oxide semiconductor field effect transistor) is of great interest nowadays as they are widely used in electric vehicles, photovoltaic applications, and a multitude of systems.
Basil Mohammed Al-Hadithi +1 more
doaj +2 more sources
Development of 8-inch Key Processes for Insulated-Gate Bipolar Transistor
Engineering, 2015 Based on the construction of the 8-inch fabrication line, advanced process technology of 8-inch wafer, as well as the fourth-generation high-voltage double-diffused metal-oxide semiconductor (DMOS+) insulated-gate bipolar transistor (IGBT) technology and
Guoyou Liu, Rongjun Ding, Haihui Luo
doaj +3 more sources
Low Switching Loss Built-In Diode of High-Voltage RC-IGBT with Shortened P+ Emitter [PDF]
Micromachines, 2023 In this paper, a low switching loss built-in diode of a high-voltage reverse-conducting insulated gate bipolar transistor (RC-IGBT) is proposed without deteriorating IGBT characteristics.
Wei Wu +5 more
doaj +2 more sources
IEEE Journal of the Electron Devices Society, 2019 A new thyristor injection concept is proposed to decrease conductivity modulation effects in an Insulated Gate Bipolar Transistor (TI-IGBT), which adds a floating p-type layer and an n-type layer at the collector side.
Mengxuan Jiang, Yulei Wang
doaj +3 more sources
A Novel IGBT with SIPOS Pillars Achieving Ultralow Power Loss in TCAD Simulation Study [PDF]
MicromachinesA novel insulated gate bipolar transistor with Semi-Insulated POly Silicon (SIPOS) is presented in this paper and analyzed through TCAD simulation. In the off state, the SIPOS-IGBT can obtain a uniform electric field distribution, which enables a thinner
Song Yuan +8 more
doaj +2 more sources