Results 11 to 20 of about 621 (173)
IGBT Overcurrent Capabilities in Resonant Circuits [PDF]
SensorsThe control of IGBT (insulated gate bipolar transistor) and MOSFET (metal oxide semiconductor field effect transistor) is of great interest nowadays as they are widely used in electric vehicles, photovoltaic applications, and a multitude of systems.
Basil Mohammed Al-Hadithi +1 more
doaj +2 more sources
Low Switching Loss Built-In Diode of High-Voltage RC-IGBT with Shortened P+ Emitter [PDF]
Micromachines, 2023 In this paper, a low switching loss built-in diode of a high-voltage reverse-conducting insulated gate bipolar transistor (RC-IGBT) is proposed without deteriorating IGBT characteristics.
Wei Wu +5 more
doaj +2 more sources
A Novel IGBT with SIPOS Pillars Achieving Ultralow Power Loss in TCAD Simulation Study [PDF]
MicromachinesA novel insulated gate bipolar transistor with Semi-Insulated POly Silicon (SIPOS) is presented in this paper and analyzed through TCAD simulation. In the off state, the SIPOS-IGBT can obtain a uniform electric field distribution, which enables a thinner
Song Yuan +8 more
doaj +2 more sources
Failure precursors for insulated gate bipolar transistors (IGBTs) [PDF]
9th International Seminar on Power Semiconductors (ISPS 2008), 2008 Failure precursors indicate changes in a measured variable that can be associated with impending failure. By identifying precursors to failure and by monitoring them, system failures can be predicted and actions can be taken to mitigate their effects. In this study, three potential failure precursor candidates, threshold voltage, transconductance, and ...
N. Patil, D. Das, K. Goebel, M. Pecht
openaire +1 more source
IEEE Journal of the Electron Devices Society, 2020 In this article, a novel bipolar-field-effect composite power transistor, called SiC GCBT (Silicon Carbide Gate-Controlled Bipolar-field-effect Composite Transistor) is presented and studied.
Yipan Zhang, Baoxing Duan, Yintang Yang
doaj +1 more source
The Effect of Neutrons on the Characteristics of the Insulated Gate Bipolar Transistor (IGBT) [PDF]
IEEE Transactions on Nuclear Science, 1986 The effects of neutrons on the operating characteristics of Insulated Gate Bipolar Transistors (IGBT) are described. Experimental results are presented for devices that have been irradiated up to a fluence of 1013 neutrons/cm2, and an analytical model is presented which explains the observed effects. It is found that the on-state voltage increases, the
Hefner, A. R. +2 more
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Investigation of impact of the gate circuitry on IGBT transistor dynamic parameters
Mokslas: Lietuvos Ateitis, 2010 The impact of Insulated Gate Bipolar Transistor driver circuit parameters on the rise and fall time of the collector current and voltage collector-emitter was investigated.
Vytautas Bleizgys, Andrius Platakis
doaj +1 more source
Micro & Nano Letters, 2021 In this paper, a new trench‐gate field‐stop insulated gate bipolar transistor (IGBT) structure having improved performances is proposed, investigated and compared with the properties of the conventional trench‐gate field‐stop IGBT.
Yan‐juan Liu +3 more
doaj +1 more source
Effect of solder layer crack on the thermal reliability of Insulated Gate Bipolar Transistors
Case Studies in Thermal Engineering, 2019 In order to study the thermal reliability of solder layer fatigue damage in Insulated Gate Bipolar Transistors (IGBT), the Finite Element Analysis (FEA) of the crack damage of the solder layer is described.
Mingxing Du +4 more
doaj +1 more source
The Influence of Soldering Profile on the Thermal Parameters of Insulated Gate Bipolar Transistors (IGBTs) [PDF]
Applied Sciences, 2021 The effect of solder joint fabrication on the thermal properties of IGBTs soldered onto glass-epoxy substrate (FR4) was investigated. Glass-epoxy substrates with a thickness of 1.50 mm, covered with a 35 μm thick Cu layer, were used. A surface finish was prepared from a hot air leveling (HAL) Sn99Cu0.7Ag0.3 layer with a thickness of 1 ÷ 40 μm.
Adrian Pietruszka +4 more
openaire +3 more sources