Results 31 to 40 of about 582,766 (203)

Simulation Study of an Insulated Gate Bipolar Transistor With Pinched-Off N-Type Pillar

IEEE Journal of the Electron Devices Society, 2016
This paper proposes a novel field-stop insulated gate bipolar transistor with an N-type pillar (NP-IGBT) formed on the silicon backside, which acts as a field-stop layer to pinch off electric field in the n-drift region under forward-blocking mode.
Mengxuan Jiang, Zheng John Shen, Jun Wang, Zhikang Shuai, Xin Yin   +4 more
doaj   +1 more source

STRUCTURAL AND TECHNOLOGICAL PARAMETERS AFFECTING THE BIPOLAR STATIC INDUCTION TRANSISTOR (BSIT ) RESISTANCE

Вестник Дагестанского государственного технического университета: Технические науки, 2016
Aim. The aim of the study is to determine the impact of structural and technological parameters on the resistance of the bipolar static induction transistor.Methods.
T. A. Ismailov, A. R. Shakhmaeva, B. A. Shangereeva   +2 more
doaj   +1 more source

Design Solutions for Device Structures of Bipolar Transistors with an Insulated Gate and a Vertical Channel Arrangement

Доклады Белорусского государственного университета информатики и радиоэлектроники
This work presents the results of computer simulations of the operational characteristics of vertical channel Insulated Gate Bipolar Transistor (IGBT) device structures designed according to the following technologies: Trench-IGBT, Superjunction Trench ...
Trong Thanh Nguyen, Dao Dinh Ha, I. Yu. Lovshenko, V. R. Stempitsky   +3 more
doaj   +1 more source

Structural Features and Recent Progress of Super Junction IGBT

机车电传动, 2021
With the development of insulated gate bipolar transistor (IGBT) technology, the field stop structure is getting closer to its theoretical limit. Super junction (SJ) is known as "milestone in power MOSFET" and has been introduced in IGBT to further ...
Jinping ZHANG, Xiang XIAO, Bo ZHANG
doaj  

A Simplified Spice Model for IGBT

Active and Passive Electronic Components, 1998
A simplified IGBT (Insulated Gate Bipolar Transistor) SPICE macromodel, based on its equivalent circuit, is proposed. This macromodel is provided to simulate various mechanisms governing the behavior of the IGBT, and it takes into account specific ...
A. Haddi, A. Maouad, O. Elmazria, A. Hoffmann, J. P. Charles   +4 more
doaj   +1 more source

Hybrid Inverters With Dual Switching Frequencies for Switched Reluctance Motors

Energy Science &Engineering, Volume 14, Issue 10, Page 4856-4865, October 2026.
A hybrid dual‐switching‐frequency inverter for SRMs is proposed, combining SiC and IGBT devices based on rotor inductance. The method enables accurate current tracking with simple hysteresis control, significantly reducing torque ripple, vibration, and acoustic noise while cutting inverter cost compared to full‐SiC solutions.
Fares S. El‐Faouri, Majd G. Batarseh, Hamzeh J. Jaber, Ayman Faza, Wejdan Abu Elhaija   +4 more
wiley   +1 more source

A Review of Transient Support and Security‐Stability Enhancement Control Strategies for Grid‐Forming Voltage Source Converter‐Based High Voltage Direct Current Transmission

High Voltage, Volume 11, Issue 5, Page 1192-1212, October 2026.
ABSTRACT Amid the ongoing global energy transition, the short‐circuit ratios of AC power grids are continuously decreasing. Grid‐forming voltage source converter‐based high voltage direct current transmission (GFM VSC‐HVDC) systems have therefore come to the forefront of attention.
Cheng Peng, Guangfu Tang, Yuexi Yang, Xiao Zhou, Chong Gao, Zhiyuan He, Xinying Wang, Hui Pang   +7 more
wiley   +1 more source

Study on the IGBT Using a Deep Trench Filled With SiO₂ and High-k Dielectric Film

IEEE Journal of the Electron Devices Society, 2020
A novel insulated gate bipolar transistor (IGBT) using a deep trench filled with SiO2 and high-k dielectric film (HKF) is presented. The deep trench with the HKF can provide rapid depletion of the drift region during the turn-off transient, eliminating ...
Weizhen Chen, Junji Cheng
doaj   +1 more source

Thermal Load Application Method for Temperature Cycle Test of Power Module PP-IGBT

Zhongguo dianli, 2023
Temperature cycling test is an important test method to study the thermal fatigue aging characteristics of power module press pack insulated gate bipolar transistor (PP-IGBT) devices. Therefore, taking the PP-IGBT of flexible direct converter valve power
Biaojun LI, Mei LENG, Jiashui DAI, Ning WANG   +3 more
doaj   +1 more source

Developments and Prospects of Voltage Source Converter‐High‐Voltage Direct Current Transmission Technology

High Voltage, Volume 11, Issue 5, Page 1174-1191, October 2026.
ABSTRACT Voltage source converter‐high‐voltage direct current (VSC‐HVDC) transmission is a key technology for renewable‐energy integration, regional grid interconnection and passive‐network power supply. This review summarises the development history of VSC‐HVDC, the evolution of converter topologies, its technical advantages and representative ...
Licheng Li, Yongxia Han, Yuebin Zhou, Huangqing Xiao, Yang Dong, Weisheng Zhang, Yanan Ye, Yichang Li   +7 more
wiley   +1 more source