Results 31 to 40 of about 16,299 (241)
Energies, 2020 This study proposes an electrothermal averaged model of the diode–transistor switch including insulated gate bipolar transistor (IGBT) and a rapid switching diode.
Paweł Górecki, Krzysztof Górecki
doaj +1 more source
Numerical Analysis of 3-Dimensional Scaling Rules on a 1.2-kV Trench Clustered IGBT [PDF]
, 2018 3-dimensional scaling rules for the cathode cells and threshold voltages of a 1.2-kV Trench Clustered IGBT (TCIGBT) are investigated using calibrated models in Synopsys Sentaurus TCAD tools.
De Souza, M. +4 more
core +1 more source
Energies, 2017 In the application of vehicle power supply and distributed power generation, there are strict requirements for the pulse width modulation (PWM) converter regarding power density and reliability.
Xianjin Huang +3 more
doaj +1 more source
Interconnect materials enabling IGBT modules to achieve stable short circuit failure behavior [PDF]
, 2017 Insulated gate bipolar transistor (IGBT) modules, which can fail to stable short-circuit mode, have major applications in electricity network-related fields.
Corfield, Martin +3 more
core +1 more source
Simulation Study of an Insulated Gate Bipolar Transistor With Pinched-Off N-Type Pillar
IEEE Journal of the Electron Devices Society, 2016 This paper proposes a novel field-stop insulated gate bipolar transistor with an N-type pillar (NP-IGBT) formed on the silicon backside, which acts as a field-stop layer to pinch off electric field in the n-drift region under forward-blocking mode.
Mengxuan Jiang +4 more
doaj +1 more source
Current sharing control strategy for IGBTs connected in parallel [PDF]
, 2016 This work focuses on current sharing between punch-through insulated gate bipolar transistors (IGBTs) connected in parallel and evaluates the mechanisms that allow overall current balancing. Two different control strategies are presented.
Pérez Delgado, Raul +2 more
core +2 more sources
Novel Approach Toward Plasma Enhancement in Trench-Insulated Gate Bipolar Transistors [PDF]
, 2015 In this letter, a trench-insulated gate bipolar transistor (IGBT) design with local charge compensating layers featured at the cathode of the device is presented and analyzed.
Amaratunga, G. +7 more
core +1 more source
, 2018 Reliability is one of the critical issues for a modular multilevel converter (MMC) since it consists of a large number of series-connected power electronics submodules (SMs).
Wei Li +5 more
semanticscholar +1 more source
A New Switching Impulse Generator Based on Transformer Boosting and Insulated Gate Bipolar Transistor Trigger Control [PDF]
, 2016 To make the switching impulse (SI) generator more compact, portable and feasible in field tests, a new approach based on transformer boosting was developed.
Albarracín Sánchez, Ricardo +4 more
core +3 more sources
Вестник Дагестанского государственного технического университета: Технические науки, 2016 Aim. The aim of the study is to determine the impact of structural and technological parameters on the resistance of the bipolar static induction transistor.Methods.
T. A. Ismailov +2 more
doaj +1 more source