Results 51 to 60 of about 621 (173)

INSULATED-GATE BIPOLAR TRANSISTOR FORMED IN THE BULK SILICON AND USING «SILICON ON INSULATOR» TECHNOLOGY

Доклады Белорусского государственного университета информатики и радиоэлектроники, 2019
The results of the optimization of design and technological parameters device structures insulated-gate bipolar transistor (IGBT), formed in bulk silicon and using «Silicon on Insulator» (SOI) technology are presented.
S. Ibrahim, I. Yu. Lovshenko, V. R. Stempitsky   +2 more
doaj  

Recent Advances in Hybrid, Plug‐In, Battery, and Fuel Cell EVs: Control Schemes, Modes, Converter Topologies, and Pros and Cons

IET Electrical Systems in Transportation, Volume 2026, Issue 1, 2026.
Direct current (DC)–DC converters are the backbone of electric vehicle (EV) power trains, enabling efficient and bidirectional energy flow between the battery, high‐voltage (HV) DC link, and auxiliary rails under tight isolation, gain, ripple, and electromagnetic interference (EMI) constraints.
Abhilash Sakhare, Suresh Mikkili, Praveen Kumar Bonthagorla, Fabio Crescimbini   +3 more
wiley   +1 more source

Towards a next-generation hybrid switch: Challenges and insights on the parallelization of SiC-MOSFET and Si-IGBT

Eletrônica de Potência
The application of hybrid semiconductor switches (HyS) emerges as a solution to the increasing demand for higher switching frequency and power density at a competitive cost.
Pedro H. G. Vilela , Edmar F. Cota, Heverton A. Pereira, Tomás P. Corrêa, Allan F. Cupertino   +4 more
doaj   +1 more source

Numerical analysis and thermal fatigue life prediction of solder layer in a SiC-IGBT power module

Fracture and Structural Integrity, 2020
Limited by the mechanical properties of materials, silicon (Si) carbide insulated gate bipolar transistor (IGBT) can no longer meet the requirements of high power and high frequency electronic devices.
Dianhao Zhang, Xiao-guang Huang, Bin-liang Cheng, Neng Zhang   +3 more
doaj   +1 more source

Screening study on high power IGBT [PDF]

International Journal for Simulation and Multidisciplinary Design Optimization, 2010
This paper presents the modelling of some high power IGBT (Insulated Gate Bipolar Transistor) performances. These IGBT are essential components of the power converter in railway applications.
Karama M., Rabier F.
doaj   +1 more source

A new symmetric modular eleven‐level inverter using single and double source unit for low voltage applications with reduced number of switches

IET Power Electronics, Volume 19, Issue 1, January/December 2026.
This study introduces a new modular multilevel inverter that can produce five levels of positive voltage using only six power switches and five DC voltage sources. The basic unit is composed of a single‐ and double‐source (SDS) unit. SDS reduces the number of power electronic components, such as the insulated gate bipolar transistors, freewheeling ...
Naser Fakhri, Sara Laali, Mohammad Salay Naderi, Hossein Rahimi, Saeid Gholami Farkoush   +4 more
wiley   +1 more source

IGBTs: Concept, Development and New Structures

Kongzhi Yu Xinxi Jishu, 2017
The insulated gate bipolar transistor (IGBT) is arguably the most innovative power device today. It is the only device concept known today that incorporates in a single cell a MOSFET with a bipolar junction transistor, whereby both devices are active in ...
Florin Udrea
doaj  

SIMSCAPE Electrical Modelling of the IGBT with Parameter Optimization Using Genetic Algorithm

Journal of Electrical and Computer Engineering, 2021
The concept introduced by MathWorks in the Simscape product is the link representation between the SIMSCAPE library components that correspond to physical connections transmitting power.
Mohamed Baghdadi, Elmostafa Elwarraki, Naoual Mijlad, Imane Ait Ayad   +3 more
doaj   +1 more source

A nine‐level T‐type inverter (9L‐TTI) with voltage boost capability

IET Power Electronics, Volume 19, Issue 1, January/December 2026.
A new multi‐level inverter topology with boosting feature considering the reduced switch count has been presented, compared and validated. Abstract This paper introduces a 9L T‐type boost inverter (9L‐TTI) based multilevel topology, which generates a nine‐level output voltage in the boost mode.
Zarren Firdous, Saad Mekhilef, Nidhi Mishra, Asif Mustafa, Mehdi Seyedmahmoudian, Alex Stojcevski   +5 more
wiley   +1 more source

Loss Characteristics of 6.5 kV RC-IGBT Applied to a Traction Converter

Energies, 2017
6.5 kV level IGBT (Insulated Gate Bipolar Transistor) modules are widely applied in megawatt locomotive (MCUs) traction converters, to achieve an upper 3.5 kV DC link, which is beneficial for decreasing power losses and increasing the power density ...
Xianjin Huang, Chao Ling, Dengwei Chang, Xiaojie You, Trillion Q. Zheng   +4 more
doaj   +1 more source