Results 51 to 60 of about 16,299 (241)
Single-phase T-type inverter performance benchmark using Si IGBTs, SiC MOSFETs and GaN HEMTs [PDF]
, 2015 In this paper, benchmark of Si IGBT, SiC MOSFET and GaN HEMT power switches at 600V class is conducted in single-phase T-type inverter. Gate driver requirements, switching performance, inverter efficiency performance, heat sink volume, output filter ...
Castellazzi, Alberto, Gurpinar, Emre
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Weibull‐Neural Network Framework for Wind Turbine Lifetime Monitoring and Disturbance Identification
Wind Energy, Volume 29, Issue 4, April 2026.ABSTRACT Wind turbines are vital for sustainable energy, yet their reliability under diverse operational and environmental conditions remains a challenge, often leading to costly failures. This study presents a novel Weibull‐Neural Network Framework to enhance wind turbine lifetime monitoring by estimating reliability (R(t)) and mean residual life (MRL)
Fatemeh Kiadaliry +2 more
wiley +1 more source
Multiterminal High‐Voltage Direct Current Projects: A Comprehensive Assessment and Future Prospects
High Voltage, Volume 11, Issue 2, Page 317-344, April 2026.ABSTRACT Multiterminal high‐voltage direct current (MT‐HVDC) systems are an important part of modern power systems, addressing the need for bulk power delivery and efficient renewable energy integration. This paper provides a comprehensive overview of recent advances in MT‐HVDC technology, including launched projects and ongoing initiatives.
Mohammad Hossein Mousavi +3 more
wiley +1 more source
Thermal Load Application Method for Temperature Cycle Test of Power Module PP-IGBT
Zhongguo dianli, 2023 Temperature cycling test is an important test method to study the thermal fatigue aging characteristics of power module press pack insulated gate bipolar transistor (PP-IGBT) devices. Therefore, taking the PP-IGBT of flexible direct converter valve power
Biaojun LI +3 more
doaj +1 more source
High Voltage, Volume 11, Issue 2, Page 522-533, April 2026.ABSTRACT Because of the harsh serving conditions of insulated gate bipolar transistor (IGBT) packaged by silicone gel with high voltage and high frequency, it is crucial to reveal the developing characteristics and inhibiting method of discharged degradation at the interface of silicone gel/ceramic substrates.
Chuang Zhang +7 more
wiley +1 more source
A New SiC Planar-Gate IGBT for Injection Enhancement Effect and Low Oxide Field
Energies, 2020 A new silicon carbide (SiC) planar-gate insulated-gate bipolar transistor (IGBT) is proposed and comprehensively investigated in this paper. Compared to the traditional SiC planar-gate IGBT, the new IGBT boasts a much stronger injection enhancement ...
Meng Zhang +4 more
doaj +1 more source
Structure Oriented Compact Model for Advanced Trench IGBTs without Fitting Parameters for Extreme Condition: part I [PDF]
, 2011 2011 22nd European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, ESREF 2011, Oct 3-7, 2011, Universit Bordeaux 1, Domaine Haut Carr, Agora Talence, FranceA device structure based compact model for advanced trench gate IGBTs ...
Omura, I., Tanaka, M.
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Beyond Conventional Cooling: Advanced Micro/Nanostructures for Managing Extreme Heat Flux
Advanced Materials, Volume 38, Issue 5, 22 January 2026.This review examines the design, application, and manufacturing of biomimetic or engineered micro/nanostructures for managing high heat‐flux in multi‐level electronics by enhancing conductive, convective, phase‐changing, and radiative heat transfer mechanisms, highlighting their potential for efficient, targeted thermal management, and future prospects.
Yuankun Zhang +7 more
wiley +1 more source
Reliability evaluation of MMC system considering working conditions
The Journal of Engineering, 2018 The reliability is a key issue of the high-voltage high-power modular multilevel converter (MMC) system due to the usage of fragile insulated gate bipolar transistor (IGBT) modules. In this study, it is proposed that the reliability of the MMC system can
Tao Zheng +3 more
doaj +1 more source
Transient electrothermal simulation of power semiconductor devices [PDF]
, 2010 In this paper, a new thermal model based on the Fourier series solution of heat conduction equation has been introduced in detail. 1-D and 2-D Fourier series thermal models have been programmed in MATLAB/Simulink.
, +6 more
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