Results 61 to 70 of about 621 (172)
Energies, 2019 The on-state voltage is an important electrical parameter of insulated gate bipolar transistor (IGBT) modules. Due to limits in instrumentation and methods, it is difficult to ensure accurate measurements of the on-state voltage in practical working ...
Qingyi Kong +4 more
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Energies, 2020 In the design of modern power electronics converters, especially DC-DC converters, circuit-level computer simulations play an important role. This article analyses the accuracy of computations of the boost converter characteristics in the steady state ...
Paweł Górecki, Krzysztof Górecki
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Power Converter's IGBT Multi‐State Reliability Analysis for Low Failure Rate Operation
IET Power Electronics, Volume 19, Issue 1, January/December 2026.This paper proposes a multi‐state reliability analysis for IGBTs in power converters, moving beyond the conventional two‐stage model with a constant failure rate and introduces a multi‐state Markov chain model for voltage source converters under different modulation scenarios.
Qiaohan Su +3 more
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The Application of Approximate Entropy Theory in Defects Detecting of IGBT Module
Active and Passive Electronic Components, 2012 Defect is one of the key factors in reducing the reliability of the insulated gate bipolar transistor (IGBT) module, so developing the diagnostic method for defects inside the IGBT module is an important measure to avoid catastrophic failure and improves
Shengqi Zhou +5 more
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IET Power Electronics, Volume 19, Issue 1, January/December 2026.This work investigates the displacement amplitude of the contact surfaces between the Si chip and the Mo emitter plate of a PP‐IGBT module during power cycling on the basis of experimental measurements, as well as the effects of loading conditions such as the load current, switching time and normal load on the displacement amplitude.
Tong An +5 more
wiley +1 more source
Energies, 2019 In this paper, the impact of a double-sided press-pack insulated-gate-bipolar-transistor (PP IGBT) cooling structure on its thermal impedance distribution is studied and explored. A matrix thermal impedance network model is built by considering the multi-
Yao Chang +6 more
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Design of IGBT parameter prediction hardware system based on LSTM network
Dianzi Jishu Yingyong, 2019 Parameter prediction of insulated gate bipolar transistor(IGBT) can effectively avoid the economic loss and safety problem caused by its failure. Based on the analysis of IGBT parameters, the paper designs a SoC hardware system of IGBT parameters ...
Li Yuanbo, Yang Yuan, Zhang Xiaotao
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Analytical modeling of device-circuit interactions for the power insulated gate bipolar transistor (IGBT) [PDF]
IEEE Transactions on Industry Applications, 1990 The device-circuit interactions of the power insulated gate bipolar transistor (IGBT) for a series resistor-inductor load, both with and without a snubber, are simulated. An analytical model for the transient operation of the IGBT, previously developed, is used in conjunction with the load circuit state equations for the simulations.
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STUDY ON THE OPTIMIZATION OF IGBT THERMAL MANAGEMENT FOR PTC HEATER [PDF]
Journal of Engineering Science and Technology, 2015 It is essential to optimize HVAC (Heating, Ventilation and Air-Conditioning) system for a thermal plant or an electric vehicle since it has a significant effect on the thermal efficiency.
J. W. JEONG, Y. L. LEE
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Novel Low Turn-Off Loss Trench-Gate FS-IGBT With a Hybrid
IEEE Journal of the Electron Devices Society, 2019 A trench-gate field stop insulated gate bipolar transistor (TFS-IGBT) with a novel hybrid p+/n collector structure is proposed to enhance the trade-off relationship between the on-state voltage drop (Von) and the turn-off energy loss (Eoff). The proposed
Kui Ma, Weijia Zhang, Wai Tung Ng
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