Results 61 to 70 of about 582,766 (203)
Numerical analysis and thermal fatigue life prediction of solder layer in a SiC-IGBT power module
Fracture and Structural Integrity, 2020 Limited by the mechanical properties of materials, silicon (Si) carbide insulated gate bipolar transistor (IGBT) can no longer meet the requirements of high power and high frequency electronic devices.
Dianhao Zhang +3 more
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Screening study on high power IGBT [PDF]
International Journal for Simulation and Multidisciplinary Design Optimization, 2010 This paper presents the modelling of some high power IGBT (Insulated Gate Bipolar Transistor) performances. These IGBT are essential components of the power converter in railway applications.
Karama M., Rabier F.
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IGBTs: Concept, Development and New Structures
Kongzhi Yu Xinxi Jishu, 2017 The insulated gate bipolar transistor (IGBT) is arguably the most innovative power device today. It is the only device concept known today that incorporates in a single cell a MOSFET with a bipolar junction transistor, whereby both devices are active in ...
Florin Udrea
doaj
Eletrônica de PotênciaThe application of hybrid semiconductor switches (HyS) emerges as a solution to the increasing demand for higher switching frequency and power density at a competitive cost.
Pedro H. G. Vilela +4 more
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SIMSCAPE Electrical Modelling of the IGBT with Parameter Optimization Using Genetic Algorithm
Journal of Electrical and Computer Engineering, 2021 The concept introduced by MathWorks in the Simscape product is the link representation between the SIMSCAPE library components that correspond to physical connections transmitting power.
Mohamed Baghdadi +3 more
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A Hybrid Ultra‐High Voltage DC Transformer With Digital Twin‐Driven Operation and Control
Digital Twins and Applications, Volume 3, Issue 1, January/December 2026.This study introduces a digital twin‐driven hybrid ultra‐high‐voltage DC transformer (UHVDCT) that combines high‐capacity LCCs with low‐capacity MMCs at the UHV side. This innovative topology reduces MMC requirements by 32.9% while ensuring stable power flow and dynamic reactive balance through real‐time virtual‐physical synchronization.
Ling Xu +6 more
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Loss Characteristics of 6.5 kV RC-IGBT Applied to a Traction Converter
Energies, 2017 6.5 kV level IGBT (Insulated Gate Bipolar Transistor) modules are widely applied in megawatt locomotive (MCUs) traction converters, to achieve an upper 3.5 kV DC link, which is beneficial for decreasing power losses and increasing the power density ...
Xianjin Huang +4 more
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Electronics Letters, Volume 62, Issue 1, January/December 2026.The increase of the drop coefficient and the virtual inertia coefficient will aggravate the junction temperature fluctuation, and the drop coefficient has a greater influence than the virtual inertia coefficient. ABSTRACT In this letter, we investigate the influence of virtual inertia frequency regulation control on the junction temperature of a ...
Zhou Zhiting, Li Hui, Zhen‐nan Fan
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Energies, 2019 The on-state voltage is an important electrical parameter of insulated gate bipolar transistor (IGBT) modules. Due to limits in instrumentation and methods, it is difficult to ensure accurate measurements of the on-state voltage in practical working ...
Qingyi Kong +4 more
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IET Electric Power Applications, Volume 20, Issue 1, January/December 2026.This study introduces an adaptive speed control strategy for fast mechanical switches using an IGBT fully controlled driving circuit. The approach combines PWM‐based current shaping with an intelligent secant algorithm to regulate opening speed in real time without hardware changes.
Wei Li +4 more
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