Results 61 to 70 of about 621 (173)

A three‐phase three‐level converter with shared flying capacitors

IET Power Electronics, Volume 19, Issue 1, January/December 2026.
Three‐phase multilevel converters use a high number of components which increases their size. As specific weight reduction is a work of interest for embedded system applications, this paper presents a topology aiming to optimize volume and mass for a three‐level three‐phase inverter. The number of passive and active components is reduced thanks to the ‘
Maxime Pain, Guillaume Gateau, Jean‐Marc Blaquiere   +2 more
wiley   +1 more source

A Model of the On-State Voltage across IGBT Modules Based on Physical Structure and Conduction Mechanisms

Energies, 2019
The on-state voltage is an important electrical parameter of insulated gate bipolar transistor (IGBT) modules. Due to limits in instrumentation and methods, it is difficult to ensure accurate measurements of the on-state voltage in practical working ...
Qingyi Kong, Mingxing Du, Ziwei Ouyang, Kexin Wei, William Gerard Hurley   +4 more
doaj   +1 more source

Harmonic elimination of a fifteen‐level inverter with reduced number of switches using genetic algorithm

IET Power Electronics, Volume 19, Issue 1, January/December 2026.
This article presents a Fifteen‐level inverter topology that has a lesser number of switches (12) and can accommodate isolated DC sources. The total harmonic elimination (THD) of the proposed topology using genetic algorithm is within the IEEE 519 standards. Further, the fifteen‐level inverter is implemented in Hardware and firing pulses were generated
Yogesh Joshi, Shimi Sudha Letha, Farhad Ilahi Bakhsh, Gopal Lal Jaat, Suyash Tilak   +4 more
wiley   +1 more source

Analysis of the Usefulness Range of the Averaged Electrothermal Model of a Diode–Transistor Switch to Compute the Characteristics of the Boost Converter

Energies, 2020
In the design of modern power electronics converters, especially DC-DC converters, circuit-level computer simulations play an important role. This article analyses the accuracy of computations of the boost converter characteristics in the steady state ...
Paweł Górecki, Krzysztof Górecki
doaj   +1 more source

Fault diagnosis method of a cascaded H‐bridge inverter based on a multisource adaptive fusion CNN‐transformer

IET Power Electronics, Volume 19, Issue 1, January/December 2026.
The multisource adaptive fusion CNN‐transformer method proposed in this study can provide theoretical and technical support for fault diagnosis of high‐voltage MCHBI. It has a promising potential for engineering applications. Abstract In high‐voltage applications, the number of cascaded H‐bridge inverter units is large, the failure probability ...
Weiman Yang, Weinian Wang, Xinggui Wang, Jianfeng Gu, Zhuoling Wang   +4 more
wiley   +1 more source

Non‐Contact Turn‐Off Time Measurement Method for IGBTs in the Half‐Bridge Submodule Configuration of MMC

IET Power Electronics, Volume 19, Issue 1, January/December 2026.
This paper proposes a non‐contact method for measuring the turn‐off time of insulated‐gate bipolar transistor (IGBT) devices in modular multilevel converters (MMC) submodules, using the decay of load‐side common‐mode current. The technique leverages existing current‐sensing infrastructure and avoids intrusive modifications, enabling real‐time ...
Jiyun Liu, Bowen Gu, Tianqi Li, Jian Luo, Zhonghao Dongye, Yuzheng Huang, Bing Ji, Lei Qi   +7 more
wiley   +1 more source

The Application of Approximate Entropy Theory in Defects Detecting of IGBT Module

Active and Passive Electronic Components, 2012
Defect is one of the key factors in reducing the reliability of the insulated gate bipolar transistor (IGBT) module, so developing the diagnostic method for defects inside the IGBT module is an important measure to avoid catastrophic failure and improves
Shengqi Zhou, Luowei Zhou, Suncheng Liu, Pengju Sun, Quanming Luo, Junke Wu   +5 more
doaj   +1 more source

A 3D Thermal Network Model for Monitoring Imbalanced Thermal Distribution of Press-Pack IGBT Modules in MMC-HVDC Applications

Energies, 2019
In this paper, the impact of a double-sided press-pack insulated-gate-bipolar-transistor (PP IGBT) cooling structure on its thermal impedance distribution is studied and explored. A matrix thermal impedance network model is built by considering the multi-
Yao Chang, Wuhua Li, Haoze Luo, Xiangning He, Francesco Iannuzzo, Frede Blaabjerg, Weixing Lin   +6 more
doaj   +1 more source

Design of IGBT parameter prediction hardware system based on LSTM network

Dianzi Jishu Yingyong, 2019
Parameter prediction of insulated gate bipolar transistor(IGBT) can effectively avoid the economic loss and safety problem caused by its failure. Based on the analysis of IGBT parameters, the paper designs a SoC hardware system of IGBT parameters ...
Li Yuanbo, Yang Yuan, Zhang Xiaotao
doaj   +1 more source

Novel Low Turn-Off Loss Trench-Gate FS-IGBT With a Hybrid $p^{{+}}/{n}$ Collector Structure

IEEE Journal of the Electron Devices Society, 2019
A trench-gate field stop insulated gate bipolar transistor (TFS-IGBT) with a novel hybrid p+/n collector structure is proposed to enhance the trade-off relationship between the on-state voltage drop (Von) and the turn-off energy loss (Eoff). The proposed
Kui Ma, Weijia Zhang, Wai Tung Ng
doaj   +1 more source