Results 41 to 50 of about 621 (172)

Beyond Conventional Cooling: Advanced Micro/Nanostructures for Managing Extreme Heat Flux

Advanced Materials, Volume 38, Issue 5, 22 January 2026.
This review examines the design, application, and manufacturing of biomimetic or engineered micro/nanostructures for managing high heat‐flux in multi‐level electronics by enhancing conductive, convective, phase‐changing, and radiative heat transfer mechanisms, highlighting their potential for efficient, targeted thermal management, and future prospects.
Yuankun Zhang, Huajie Li, Yuhang Zhou, Jun Ma, Keng‐Te Lin, Han Lin, Chunsheng Guo, Baohua Jia   +7 more
wiley   +1 more source

An Aging-Degree Evaluation Method for IGBT Bond Wire with Online Multivariate Monitoring

Energies, 2019
The aging fracture of bonding wire is one of the main reasons for failure of insulated gate bipolar transistor (IGBT). This paper proposes an online monitoring method for IGBT bonding wire aging that does not interfere with the normal operation of the ...
Zilang Hu, Xinglai Ge, Dong Xie, Yichi Zhang, Bo Yao, Jian Dai, Fengbo Yang   +6 more
doaj   +1 more source

A Hybrid Ultra‐High Voltage DC Transformer With Digital Twin‐Driven Operation and Control

Digital Twins and Applications, Volume 3, Issue 1, January/December 2026.
This study introduces a digital twin‐driven hybrid ultra‐high‐voltage DC transformer (UHVDCT) that combines high‐capacity LCCs with low‐capacity MMCs at the UHV side. This innovative topology reduces MMC requirements by 32.9% while ensuring stable power flow and dynamic reactive balance through real‐time virtual‐physical synchronization.
Ling Xu, Le Zhao, Xiaohu Zhang, Hanlin Guo, Jie Fang, Zheren Zhang, Zheng Xu   +6 more
wiley   +1 more source

Recent Advances in Hybrid, Plug‐In, Battery, and Fuel Cell EVs: Control Schemes, Modes, Converter Topologies, and Pros and Cons

IET Electrical Systems in Transportation, Volume 2026, Issue 1, 2026.
Direct current (DC)–DC converters are the backbone of electric vehicle (EV) power trains, enabling efficient and bidirectional energy flow between the battery, high‐voltage (HV) DC link, and auxiliary rails under tight isolation, gain, ripple, and electromagnetic interference (EMI) constraints.
Abhilash Sakhare, Suresh Mikkili, Praveen Kumar Bonthagorla, Fabio Crescimbini   +3 more
wiley   +1 more source

Least Squares Method for Identification of IGBT Thermal Impedance Networks Using Direct Temperature Measurements

Energies, 2020
State-of-the-art methods for determining thermal impedance networks for IGBT (Insulated Gate Bipolar Transistor) modules usually involves the establishment of the relationship between the measured transistor or diode voltage and temperature under ...
Humphrey Mokom Njawah Achiri, Vaclav Smidl, Zdenek Peroutka, Lubos Streit   +3 more
doaj   +1 more source

A four‐step control for IGBT switching improvement using an active voltage gate driver

IET Power Electronics, 2022
Gate drivers form an essential interface between the high power transistors and low voltage control circuits in power converters to govern the transistor switching operations and maintain other ancillary functions.
Chen Li, Kun Tan, Bing Ji, Zhiqiang Wang, Shuai Ding, Paul Lefley   +5 more
doaj   +1 more source

A new symmetric modular eleven‐level inverter using single and double source unit for low voltage applications with reduced number of switches

IET Power Electronics, Volume 19, Issue 1, January/December 2026.
This study introduces a new modular multilevel inverter that can produce five levels of positive voltage using only six power switches and five DC voltage sources. The basic unit is composed of a single‐ and double‐source (SDS) unit. SDS reduces the number of power electronic components, such as the insulated gate bipolar transistors, freewheeling ...
Naser Fakhri, Sara Laali, Mohammad Salay Naderi, Hossein Rahimi, Saeid Gholami Farkoush   +4 more
wiley   +1 more source

A nine‐level T‐type inverter (9L‐TTI) with voltage boost capability

IET Power Electronics, Volume 19, Issue 1, January/December 2026.
A new multi‐level inverter topology with boosting feature considering the reduced switch count has been presented, compared and validated. Abstract This paper introduces a 9L T‐type boost inverter (9L‐TTI) based multilevel topology, which generates a nine‐level output voltage in the boost mode.
Zarren Firdous, Saad Mekhilef, Nidhi Mishra, Asif Mustafa, Mehdi Seyedmahmoudian, Alex Stojcevski   +5 more
wiley   +1 more source

INSULATED-GATE BIPOLAR TRANSISTOR FORMED IN THE BULK SILICON AND USING «SILICON ON INSULATOR» TECHNOLOGY

Доклады Белорусского государственного университета информатики и радиоэлектроники, 2019
The results of the optimization of design and technological parameters device structures insulated-gate bipolar transistor (IGBT), formed in bulk silicon and using «Silicon on Insulator» (SOI) technology are presented.
S. Ibrahim, I. Yu. Lovshenko, V. R. Stempitsky   +2 more
doaj  

Numerical analysis and thermal fatigue life prediction of solder layer in a SiC-IGBT power module

Fracture and Structural Integrity, 2020
Limited by the mechanical properties of materials, silicon (Si) carbide insulated gate bipolar transistor (IGBT) can no longer meet the requirements of high power and high frequency electronic devices.
Dianhao Zhang, Xiao-guang Huang, Bin-liang Cheng, Neng Zhang   +3 more
doaj   +1 more source