Results 41 to 50 of about 16,299 (241)

Probabilistic Monte-Carlo method for modelling and prediction of electronics component life [PDF]

open access: yes, 2014
Power electronics are widely used in electric vehicles, railway locomotive and new generation aircrafts. Reliability of these components directly affect the reliability and performance of these vehicular platforms.
Alghassi, Ali   +3 more
core   +1 more source

Design Solutions for Device Structures of Bipolar Transistors with an Insulated Gate and a Vertical Channel Arrangement

open access: yesДоклады Белорусского государственного университета информатики и радиоэлектроники
This work presents the results of computer simulations of the operational characteristics of vertical channel Insulated Gate Bipolar Transistor (IGBT) device structures designed according to the following technologies: Trench-IGBT, Superjunction Trench ...
Trong Thanh Nguyen   +3 more
doaj   +1 more source

Prediction of Short-Circuit-Related Thermal Stress in Aged IGBT Modules [PDF]

open access: yes, 2016
In this paper, the thermal stress on bond wires of aged IGBT modules under short-circuit conditions has been studied with respect to different solder delamination levels.
Bahman, Amir Sajjad   +4 more
core   +2 more sources

Structural Features and Recent Progress of Super Junction IGBT

open access: yes机车电传动, 2021
With the development of insulated gate bipolar transistor (IGBT) technology, the field stop structure is getting closer to its theoretical limit. Super junction (SJ) is known as "milestone in power MOSFET" and has been introduced in IGBT to further ...
Jinping ZHANG, Xiang XIAO, Bo ZHANG
doaj  

The Analysis Of Accuracy Of Selected Methods Of Measuring The Thermal Resistance Of IGBTs

open access: yesMetrology and Measurement Systems, 2015
In the paper selected methods of measuring the thermal resistance of an IGBT (Insulated Gate Bipolar Transistor) are presented and the accuracy of these methods is analysed.
Górecki Krzysztof, Górecki Paweł
doaj   +1 more source

Reverse-Conducting Insulated Gate Bipolar Transistor: A Review of Current Technologies

open access: yesIEEE Transactions on Electron Devices, 2019
The reverse-conducting insulated gate bipolar transistor (RC-IGBT) has several benefits over a separate IGBT and diode solution and has the potential to become the dominant device within many power electronic applications; including, but not limited to ...
E. Findlay, F. Udrea
semanticscholar   +1 more source

A Simplified Spice Model for IGBT

open access: yesActive and Passive Electronic Components, 1998
A simplified IGBT (Insulated Gate Bipolar Transistor) SPICE macromodel, based on its equivalent circuit, is proposed. This macromodel is provided to simulate various mechanisms governing the behavior of the IGBT, and it takes into account specific ...
A. Haddi   +4 more
doaj   +1 more source

Thermo-mechanical stress of bonded wires used in high power modules with alternating and direct current modes [PDF]

open access: yes, 2012
Today, power electronic reliability is a main subject of interest for many companies and laboratories. The main process leading to the IGBT failure is the cycling thermal stress.
Medjahed, Hassen   +2 more
core   +4 more sources

Optimization of Energy Efficiency in Photovoltaic Water Pumping Systems Using Neural Networks

open access: yesEnergy Science &Engineering, Volume 14, Issue 4, Page 2153-2181, April 2026.
This study investigates an optimal control strategy for a photovoltaic (PV) water pumping system aimed at improving efficiency and autonomy in off‐grid applications. The system uses an induction motor with direct torque control and compares three maximum power point tracking (MPPT) techniques: neural network–based MPPT, Incremental Conductance (IC ...
Sihem Ghoudelbourk   +3 more
wiley   +1 more source

Study on the IGBT Using a Deep Trench Filled With SiO2 and High-k Dielectric Film

open access: yesIEEE Journal of the Electron Devices Society, 2020
A novel insulated gate bipolar transistor (IGBT) using a deep trench filled with SiO2 and high-k dielectric film (HKF) is presented. The deep trench with the HKF can provide rapid depletion of the drift region during the turn-off transient, eliminating ...
Weizhen Chen, Junji Cheng
doaj   +1 more source

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