Results 21 to 30 of about 621 (172)
Evaluation of the turn‐off transient controllability for high‐power IGBT modules
IET Power Electronics, 2022 The efficient and flexible conversion of electrical energy is increasingly accomplished by megawatt insulated gate bipolar transistor (IGBT) modules. Their dynamic performance is influenced by the gate driver control, operating points and the switching ...
Kun Tan +7 more
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Energies, 2020 This study proposes an electrothermal averaged model of the diode–transistor switch including insulated gate bipolar transistor (IGBT) and a rapid switching diode.
Paweł Górecki, Krzysztof Górecki
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Energies, 2017 In the application of vehicle power supply and distributed power generation, there are strict requirements for the pulse width modulation (PWM) converter regarding power density and reliability.
Xianjin Huang +3 more
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Simulation Study of an Insulated Gate Bipolar Transistor With Pinched-Off N-Type Pillar
IEEE Journal of the Electron Devices Society, 2016 This paper proposes a novel field-stop insulated gate bipolar transistor with an N-type pillar (NP-IGBT) formed on the silicon backside, which acts as a field-stop layer to pinch off electric field in the n-drift region under forward-blocking mode.
Mengxuan Jiang +4 more
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Вестник Дагестанского государственного технического университета: Технические науки, 2016 Aim. The aim of the study is to determine the impact of structural and technological parameters on the resistance of the bipolar static induction transistor.Methods.
T. A. Ismailov +2 more
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Доклады Белорусского государственного университета информатики и радиоэлектроникиThis work presents the results of computer simulations of the operational characteristics of vertical channel Insulated Gate Bipolar Transistor (IGBT) device structures designed according to the following technologies: Trench-IGBT, Superjunction Trench ...
Trong Thanh Nguyen +3 more
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Structural Features and Recent Progress of Super Junction IGBT
机车电传动, 2021 With the development of insulated gate bipolar transistor (IGBT) technology, the field stop structure is getting closer to its theoretical limit. Super junction (SJ) is known as "milestone in power MOSFET" and has been introduced in IGBT to further ...
Jinping ZHANG, Xiang XIAO, Bo ZHANG
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The Analysis Of Accuracy Of Selected Methods Of Measuring The Thermal Resistance Of IGBTs
Metrology and Measurement Systems, 2015 In the paper selected methods of measuring the thermal resistance of an IGBT (Insulated Gate Bipolar Transistor) are presented and the accuracy of these methods is analysed.
Górecki Krzysztof, Górecki Paweł
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A Simplified Spice Model for IGBT
Active and Passive Electronic Components, 1998 A simplified IGBT (Insulated Gate Bipolar Transistor) SPICE macromodel, based on its equivalent circuit, is proposed. This macromodel is provided to simulate various mechanisms governing the behavior of the IGBT, and it takes into account specific ...
A. Haddi +4 more
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Study on the IGBT Using a Deep Trench Filled With SiO2 and High-k Dielectric Film
IEEE Journal of the Electron Devices Society, 2020 A novel insulated gate bipolar transistor (IGBT) using a deep trench filled with SiO2 and high-k dielectric film (HKF) is presented. The deep trench with the HKF can provide rapid depletion of the drift region during the turn-off transient, eliminating ...
Weizhen Chen, Junji Cheng
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