Results 1 to 10 of about 179,194 (295)
Nuclear Engineering and Technology, 2017 Fast neutron irradiation was used to improve the switching speed of a 600-V nonpunch-through insulated gate bipolar transistor. Fast neutron irradiation was carried out at 30-MeV energy in doses of 1 × 108 n/cm2, 1 × 109 n/cm2, 1 × 1010 n/cm2, and 1 ...
Ha Ni Baek +5 more
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Single‐switch coupled‐inductors‐based high step‐up converter with reduced voltage stress
IET Power Electronics, 2023 This paper proposes a non‐isolated DC‐DC high step‐up converter. To achieve a high voltage conversion ratio and overcome the problems related to near unity duty‐cycle of the conventional boost converter in high step‐up applications, coupled‐inductors ...
Siamak Khalili +3 more
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Doping-Less SiC p-i-n Diode: Design and Investigation
IEEE Access, 2021 We introduce a novel high-voltage SiC p-i-n diode considering a charge plasma approach. This technique facilitates the formation of the anode and the cathode regions within the silicon carbide without requiring any impurity doping by taking advantage of ...
Sara Hahmady, Stephen Bayne
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An assessment of contact metallization for high power and high temperature diamond Schottky devices [PDF]
, 2012 Different metals W, Al, Ni and Cr were evaluated as Schottky contacts on the same p-type lightly boron doped homoepitaxial diamond layer. The current–voltage (I–V) characteristics, the series resistance and the thermal stability are discussed in the ...
Achard, Jocelyn +7 more
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Controlling voltage drops in silicon diodes by electron irradiation and thermal treatment
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2018 High-frequency limiting rectifier diodes are used in power sources for rectifying alternating current, in protective elements of radio-electronic equipment, and in switching devices.
A. V. Karimov +5 more
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Interplay of bulk and interface effects in the electric-field driven transition in magnetite [PDF]
, 2009 Contact effects in devices incorporating strongly-correlated electronic materials are comparatively unexplored. We have investigated the electrically-driven phase transition in magnetite (100) thin films by four-terminal methods.
Fursina, A. A. +3 more
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A Snapback-Free and Low Turn-Off Loss 15 kV 4H–SiC IGBT with Multifunctional P-Floating Layer
Micromachines, 2022 In this paper, a 4H–SiC IGBT with a multifunctional P-floating layer (MP-IGBT) is proposed and investigated by Silvaco TCAD simulations. Compared with the conventional 4H–SiC field stop IGBT (FS-IGBT), the MP-IGBT structure features a P-floating layer ...
Xiaodong Zhang +4 more
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Piezoelectric vibration energy harvesting: A connection configuration scheme to increase operational range and output power [PDF]
, 2016 For a conventional monolithic piezoelectric transducer (PT) using a full-bridge rectifier, there is a threshold voltage that the open-circuit voltage measured across the PT must attain prior to any transfer of energy to the storage capacitor at the ...
Du, S, Jia, Y, Seshia, AA
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Research on crosstalk problem of SiC MOSFET module and countermeasures in application
机车电传动, 2023 In view of the crosstalk problem in the application of SiC MOSFET module, this paper first conducted a comparison of the parameters and measured waveform of three types of measuring differential probes to effectively reduce measurement error.
LIU Min'an +4 more
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Alexandria Engineering Journal, 2022 Due to the non-linear nature of most of the loads, there is a greater demand for reactive power in the distribution network. Further, it wasted high energy on distribution and dropped the bus voltages.
Baseem Khan +5 more
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