Results 11 to 20 of about 21,213 (253)
Optimum Control of Grid-Connected Solar Power System Under Asymmetrical Voltage Drop
International Journal of Renewable Energy Development, 2022 Solar power systems are now gradually dominating in providing clean, environmentally friendly energy and human health. In areas with a large share of solar power, grid connection control plays a key role in ensuring operational quality and stability ...
Van Binh Nguyen
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Simulation Study of an Insulated Gate Bipolar Transistor With Pinched-Off N-Type Pillar
IEEE Journal of the Electron Devices Society, 2016 This paper proposes a novel field-stop insulated gate bipolar transistor with an N-type pillar (NP-IGBT) formed on the silicon backside, which acts as a field-stop layer to pinch off electric field in the n-drift region under forward-blocking mode.
Mengxuan Jiang +4 more
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Energy Reports, 2023 The “source–load” attributes of the nodes in a new energy power system are complex and diverse due to a large amount of new energy access. The node power (active and reactive power) in the system can offer a changing mode, which causes several serious ...
Xuan Zhang +4 more
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Low Loss Insulated Gate Bipolar Transistor With Electron Injection (EI-IGBT)
IEEE Journal of the Electron Devices Society, 2017 A new type insulated gate bipolar transistor (IGBT) with electron injection (EI-IGBT) is proposed in which an N+-buried layer is implemented in P-base region.
Wanjun Chen +10 more
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4H-SiC Trench-type Accumulation Super Barrier Rectifier(TASBR) for Low Forward Voltage drop
Journal of IKEEE, 2017 Dong-woo Bae, Kwang-soo kim
exaly +3 more sources
Технологія та конструювання в електронній апаратурі, 2023 The paper considers using the technology of sheet thermomigration of three-dimensional zones, which implements p+-Si* liquid epitaxy on an n-Si wafer, to produce power semiconductor devices with crystals having thinned layers of high-resistive n-Si base,
Оlекsіі Polukhin, Vitalii Kravchina
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IEEE Journal of the Electron Devices Society, 2019 A double-diode-isolation method with low parasitic capacitance devices and reverse clamping is proposed to accurately extract the high-frequency and high-voltage dynamic on-resistance ( $R_{\mathrm{ dson}}$ ) of AlGaN/GaN high electron mobility ...
Jianming Lei +8 more
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Nuclear Engineering and Technology, 2017 Fast neutron irradiation was used to improve the switching speed of a 600-V nonpunch-through insulated gate bipolar transistor. Fast neutron irradiation was carried out at 30-MeV energy in doses of 1 × 108 n/cm2, 1 × 109 n/cm2, 1 × 1010 n/cm2, and 1 ...
Ha Ni Baek +5 more
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Single‐switch coupled‐inductors‐based high step‐up converter with reduced voltage stress
IET Power Electronics, 2023 This paper proposes a non‐isolated DC‐DC high step‐up converter. To achieve a high voltage conversion ratio and overcome the problems related to near unity duty‐cycle of the conventional boost converter in high step‐up applications, coupled‐inductors ...
Siamak Khalili +3 more
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Doping-Less SiC p-i-n Diode: Design and Investigation
IEEE Access, 2021 We introduce a novel high-voltage SiC p-i-n diode considering a charge plasma approach. This technique facilitates the formation of the anode and the cathode regions within the silicon carbide without requiring any impurity doping by taking advantage of ...
Sara Hahmady, Stephen Bayne
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