Results 11 to 20 of about 2,210,716 (290)
Extending the lifetime of power light-emitting diodes (LEDs) is achievable if proper control methods are implemented to reduce the side effects of an excessive junction temperature, TJ. The accuracy of state-of-the-art LED junction temperature monitoring
Demetrio Iero +6 more
doaj +1 more source
Simulation Study of an Insulated Gate Bipolar Transistor With Pinched-Off N-Type Pillar
This paper proposes a novel field-stop insulated gate bipolar transistor with an N-type pillar (NP-IGBT) formed on the silicon backside, which acts as a field-stop layer to pinch off electric field in the n-drift region under forward-blocking mode.
Mengxuan Jiang +4 more
doaj +1 more source
Low Loss Insulated Gate Bipolar Transistor With Electron Injection (EI-IGBT)
A new type insulated gate bipolar transistor (IGBT) with electron injection (EI-IGBT) is proposed in which an N+-buried layer is implemented in P-base region.
Wanjun Chen +10 more
doaj +1 more source
The “source–load” attributes of the nodes in a new energy power system are complex and diverse due to a large amount of new energy access. The node power (active and reactive power) in the system can offer a changing mode, which causes several serious ...
Xuan Zhang +4 more
doaj +1 more source
Influence of electrostatics upon electrospray with the intention of application to colloid thrusters [PDF]
PhDA thorough experimental and theoretical characterization of the effect of electrostatics on the electrospray process, focusing particularly on the flow rate sensitivity to the applied potential difference (voltage), has been completed.
Ryan, Charles N.
core +3 more sources
KOMBINASI FEED BACK DAN FEED FORWARD KONTROLLER PI SEBAGAI KENDALI DYNAMIC VOLTAGE RESTORER (DVR) UNTUK MEMULIHKAN VOLTAGE SAG DAN INTERRUPTION [PDF]
Dynamic voltage restorer (DVR) is one of equipments to protect sensitive load from voltage drop. DVR is installed series with line feeder by serial transformer which injecting voltage when under voltage occurs. This research is investigate the capability
Ashari, Mochamad; Institut Teknologi Sepuluh Nopember +3 more
core +1 more source
A double-diode-isolation method with low parasitic capacitance devices and reverse clamping is proposed to accurately extract the high-frequency and high-voltage dynamic on-resistance ( $R_{\mathrm{ dson}}$ ) of AlGaN/GaN high electron mobility ...
Jianming Lei +8 more
doaj +1 more source
The paper considers using the technology of sheet thermomigration of three-dimensional zones, which implements p+-Si* liquid epitaxy on an n-Si wafer, to produce power semiconductor devices with crystals having thinned layers of high-resistive n-Si base,
Оlекsіі Polukhin, Vitalii Kravchina
doaj +1 more source
4H-SiC Trench-Type Accumulation Super Barrier Rectifier(TASBR) for Low Forward Voltage Drop
Kwang-Soo Kim
exaly +3 more sources
Compensation to Fulfill Voltage Drop Security in Medium Voltage Feeders [PDF]
Increasing the load or expanding the feeder can increase the voltage drop. In addition, the greater the flow of reactive power on the line, the worse the voltage drop. On the other hand, the voltage must meet certain safety limits, and one way to correct
Saodah, Siti +7 more
core +1 more source

