Results 21 to 30 of about 179,194 (295)
Sensors, 2021 Extending the lifetime of power light-emitting diodes (LEDs) is achievable if proper control methods are implemented to reduce the side effects of an excessive junction temperature, TJ. The accuracy of state-of-the-art LED junction temperature monitoring
Demetrio Iero +6 more
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Low Loss Insulated Gate Bipolar Transistor With Electron Injection (EI-IGBT)
IEEE Journal of the Electron Devices Society, 2017 A new type insulated gate bipolar transistor (IGBT) with electron injection (EI-IGBT) is proposed in which an N+-buried layer is implemented in P-base region.
Wanjun Chen +10 more
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Simulation Study of an Insulated Gate Bipolar Transistor With Pinched-Off N-Type Pillar
IEEE Journal of the Electron Devices Society, 2016 This paper proposes a novel field-stop insulated gate bipolar transistor with an N-type pillar (NP-IGBT) formed on the silicon backside, which acts as a field-stop layer to pinch off electric field in the n-drift region under forward-blocking mode.
Mengxuan Jiang +4 more
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Energy Reports, 2023 The “source–load” attributes of the nodes in a new energy power system are complex and diverse due to a large amount of new energy access. The node power (active and reactive power) in the system can offer a changing mode, which causes several serious ...
Xuan Zhang +4 more
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Ultra Low Loss Trench Gate PCI-PiN Diode with VF<350mV [PDF]
, 2011 PiN diode forward voltage drop was reduced to as low as 325mV by the pulsed carrier injection (PCI) mechanism with trench MOS gate as the integrated injection control switch. The conventional PiN diodes have voltage drop of about 0.8V which is equivalent
Matsumoto Yasuaki +2 more
core +2 more sources
Numerical Analysis of 3-Dimensional Scaling Rules on a 1.2-kV Trench Clustered IGBT [PDF]
, 2018 3-dimensional scaling rules for the cathode cells and threshold voltages of a 1.2-kV Trench Clustered IGBT (TCIGBT) are investigated using calibrated models in Synopsys Sentaurus TCAD tools.
De Souza, M. +4 more
core +1 more source
Analysis of the A-C Voltage Control Circuit with ParallelConnection of SCR and Reactor [PDF]
, 1968 The a-c voltage control circuit, composed of parallel connection of a SCR and a reactor, gives the similar performance as the control circuit of a back to back SCR pair.
Fujitsuka, Takeshi +3 more
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Технологія та конструювання в електронній апаратурі, 2023 The paper considers using the technology of sheet thermomigration of three-dimensional zones, which implements p+-Si* liquid epitaxy on an n-Si wafer, to produce power semiconductor devices with crystals having thinned layers of high-resistive n-Si base,
Оlекsіі Polukhin, Vitalii Kravchina
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Investigation of FACTS devices to improve power quality in distribution networks [PDF]
, 2011 Flexible AC transmission system (FACTS) technologies are power electronic solutions that improve power transmission through enhanced power transfer volume and stability, and resolve quality and reliability issues in distribution networks carrying ...
Rehman Shaikh, Muhammad Asim +1 more
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IEEE Journal of the Electron Devices Society, 2019 A double-diode-isolation method with low parasitic capacitance devices and reverse clamping is proposed to accurately extract the high-frequency and high-voltage dynamic on-resistance ( $R_{\mathrm{ dson}}$ ) of AlGaN/GaN high electron mobility ...
Jianming Lei +8 more
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