Results 21 to 30 of about 2,210,716 (290)
Nuclear Engineering and Technology, 2017 Fast neutron irradiation was used to improve the switching speed of a 600-V nonpunch-through insulated gate bipolar transistor. Fast neutron irradiation was carried out at 30-MeV energy in doses of 1 × 108 n/cm2, 1 × 109 n/cm2, 1 × 1010 n/cm2, and 1 ...
Ha Ni Baek +5 more
doaj +1 more source
Single‐switch coupled‐inductors‐based high step‐up converter with reduced voltage stress
IET Power Electronics, 2023 This paper proposes a non‐isolated DC‐DC high step‐up converter. To achieve a high voltage conversion ratio and overcome the problems related to near unity duty‐cycle of the conventional boost converter in high step‐up applications, coupled‐inductors ...
Siamak Khalili +3 more
doaj +1 more source
Controlling voltage drops in silicon diodes by electron irradiation and thermal treatment
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2018 High-frequency limiting rectifier diodes are used in power sources for rectifying alternating current, in protective elements of radio-electronic equipment, and in switching devices.
A. V. Karimov +5 more
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Doping-Less SiC p-i-n Diode: Design and Investigation
IEEE Access, 2021 We introduce a novel high-voltage SiC p-i-n diode considering a charge plasma approach. This technique facilitates the formation of the anode and the cathode regions within the silicon carbide without requiring any impurity doping by taking advantage of ...
Sara Hahmady, Stephen Bayne
doaj +1 more source
Research on crosstalk problem of SiC MOSFET module and countermeasures in application
机车电传动, 2023 In view of the crosstalk problem in the application of SiC MOSFET module, this paper first conducted a comparison of the parameters and measured waveform of three types of measuring differential probes to effectively reduce measurement error.
LIU Min'an +4 more
doaj
A Snapback-Free and Low Turn-Off Loss 15 kV 4H–SiC IGBT with Multifunctional P-Floating Layer
Micromachines, 2022 In this paper, a 4H–SiC IGBT with a multifunctional P-floating layer (MP-IGBT) is proposed and investigated by Silvaco TCAD simulations. Compared with the conventional 4H–SiC field stop IGBT (FS-IGBT), the MP-IGBT structure features a P-floating layer ...
Xiaodong Zhang +4 more
doaj +1 more source
Voltage drop apportionment in Eskom's distribution networks [PDF]
, 2002 Includes bibliographical references.
Carter-Brown, Clinton Geoffrey
core +1 more source
Alexandria Engineering Journal, 2022 Due to the non-linear nature of most of the loads, there is a greater demand for reactive power in the distribution network. Further, it wasted high energy on distribution and dropped the bus voltages.
Baseem Khan +5 more
doaj +1 more source
Energies, 2015 The installation of stationary super-capacitor energy storage system (ESS) in metro systems can recycle the vehicle braking energy and improve the pantograph voltage profile.
Huan Xia +4 more
doaj +1 more source
Energies, 2018 In this paper, a low-power reconfigurable ambient Radio Frequency to Direct Current power (RF–DC) converter using an internal threshold voltage cancellation (IVC) scheme with an auxiliary transistors block is presented.
Danial Khan +9 more
doaj +1 more source