Results 81 to 90 of about 16,299 (241)

Active Voltage Balancing Control of 9‐Level Multicell‐Based A‐NPC Inverters

open access: yesIET Power Electronics, Volume 19, Issue 1, January/December 2026.
We present a optimization‐free PWM control for single‐phase 9‐level FC A‐NPC inverters that converts measured current and capacitor voltages into logic equations to both balance FC voltages and generate the commanded levels. By removing objective functions/optimizers, it enables fast, simple implementation, with experiments showing robust performance ...
Kasra Amirsoleymani, Vahid Dargahi
wiley   +1 more source

SIMSCAPE Electrical Modelling of the IGBT with Parameter Optimization Using Genetic Algorithm

open access: yesJournal of Electrical and Computer Engineering, 2021
The concept introduced by MathWorks in the Simscape product is the link representation between the SIMSCAPE library components that correspond to physical connections transmitting power.
Mohamed Baghdadi   +3 more
doaj   +1 more source

Power Converter's IGBT Multi‐State Reliability Analysis for Low Failure Rate Operation

open access: yesIET Power Electronics, Volume 19, Issue 1, January/December 2026.
This paper proposes a multi‐state reliability analysis for IGBTs in power converters, moving beyond the conventional two‐stage model with a constant failure rate and introduces a multi‐state Markov chain model for voltage source converters under different modulation scenarios.
Qiaohan Su   +3 more
wiley   +1 more source

IGBTs: Concept, Development and New Structures

open access: yesKongzhi Yu Xinxi Jishu, 2017
The insulated gate bipolar transistor (IGBT) is arguably the most innovative power device today. It is the only device concept known today that incorporates in a single cell a MOSFET with a bipolar junction transistor, whereby both devices are active in ...
Florin Udrea
doaj  

Experimental Study of the Fretting Amplitude of the Contact Surface in a PP‐IGBT Module During Power Cycling

open access: yesIET Power Electronics, Volume 19, Issue 1, January/December 2026.
This work investigates the displacement amplitude of the contact surfaces between the Si chip and the Mo emitter plate of a PP‐IGBT module during power cycling on the basis of experimental measurements, as well as the effects of loading conditions such as the load current, switching time and normal load on the displacement amplitude.
Tong An   +5 more
wiley   +1 more source

Towards a next-generation hybrid switch: Challenges and insights on the parallelization of SiC-MOSFET and Si-IGBT

open access: yesEletrônica de Potência
The application of hybrid semiconductor switches (HyS) emerges as a solution to the increasing demand for higher switching frequency and power density at a competitive cost.
Pedro H. G. Vilela   +4 more
doaj   +1 more source

Loss Characteristics of 6.5 kV RC-IGBT Applied to a Traction Converter

open access: yesEnergies, 2017
6.5 kV level IGBT (Insulated Gate Bipolar Transistor) modules are widely applied in megawatt locomotive (MCUs) traction converters, to achieve an upper 3.5 kV DC link, which is beneficial for decreasing power losses and increasing the power density ...
Xianjin Huang   +4 more
doaj   +1 more source

Utilization of bottom ash for alkali-activated (SI-AL) materials: a review [PDF]

open access: yes, 2015
In Malaysia, 180 tons/day of solid waste bottom ash are produced by a Tanjung Bin power station, which is one of the four coal power plants in Malaysia.
Abdul Kadir, Aeslina   +5 more
core  

Disturbance Rejection Control of Power Conversion System Based on Uncertainty and Disturbance Estimator

open access: yesIET Power Electronics, Volume 19, Issue 1, January/December 2026.
This paper proposes an Uncertainty and Disturbance Estimator (UDE)‐based dual‐loop control for Power Conversion Systems (PCS). Experiments show the UDE controller reduces response time by over 50% compared to PI control, significantly enhancing disturbance rejection against grid and command variations.
Haowen Ren, Xin Cao, Shixin Wang
wiley   +1 more source

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