Results 81 to 90 of about 582,766 (203)

Novel Low Turn-Off Loss Trench-Gate FS-IGBT With a Hybrid $p^{{+}}/{n}$ Collector Structure

IEEE Journal of the Electron Devices Society, 2019
A trench-gate field stop insulated gate bipolar transistor (TFS-IGBT) with a novel hybrid p+/n collector structure is proposed to enhance the trade-off relationship between the on-state voltage drop (Von) and the turn-off energy loss (Eoff). The proposed
Kui Ma, Weijia Zhang, Wai Tung Ng
doaj   +1 more source

2-D modelling and optimisation of trench insulated gate bipolar transistors (TIGBT)

, 2014
A 2-D theoretical study for the Trench Insulated Gate Bipolar Transistor (IGBT) is performed. Extensive numerical simulations, analytical modeling using a mathematically developed PIN diode-PNP transistor model and optimisation of Trench IGBTs are ...
Udrea, F, Amaratunga, GAJ, ,
core  

STUDY ON THE OPTIMIZATION OF IGBT THERMAL MANAGEMENT FOR PTC HEATER [PDF]

Journal of Engineering Science and Technology, 2015
It is essential to optimize HVAC (Heating, Ventilation and Air-Conditioning) system for a thermal plant or an electric vehicle since it has a significant effect on the thermal efficiency.
J. W. JEONG, Y. L. LEE
doaj  

2-D modelling and optimisation of trench insulated gate bipolar transistors (TIGBT)

, 1996
A 2-D theoretical study for the Trench Insulated Gate Bipolar Transistor (IGBT) is performed. Extensive numerical simulations, analytical modeling using a mathematically developed PIN diode-PNP transistor model and optimisation of Trench IGBTs are ...
Udrea, F, Amaratunga, GAJ, ,
core  

Analytical modeling of device-circuit interactions for the power insulated gate bipolar transistor (IGBT) [PDF]

IEEE Transactions on Industry Applications, 1990
The device-circuit interactions of the power insulated gate bipolar transistor (IGBT) for a series resistor-inductor load, both with and without a snubber, are simulated. An analytical model for the transient operation of the IGBT, previously developed, is used in conjunction with the load circuit state equations for the simulations.
openaire   +1 more source

Desarrollo de un modelo electro-termo-mecánico mediante análisis por elementos finitos y calibración vía resultados experimentales de una IGBT (Insulated Gate Bipolar Transistor)

, 2013
Consulta en la Biblioteca ETSI Industriales (9059)Martínez Feliu, F. (2012). Desarrollo de un modelo electro-termo-mecánico mediante análisis por elementos finitos y calibración vía resultados experimentales de una IGBT (Insulated Gate Bipolar Transistor)
Martínez Feliu, Francisco
core  

A Network Topological Approach-Based Transient 3-D Electrothermal Model of Insulated-Gate Bipolar Transistor

, 2020
International audienceWith the continuous miniaturization and rapid increase in the power ratings of an insulated-gate bipolar transistor (IGBT), the exact junction temperature becomes one of the critical performance parameters in evaluating the ...
Ren, Zhuoxiang, Yang, Shiyou, Chen, Jiajia   +2 more
core   +1 more source

Research on the Press-pack IGBT with High SCSOA

Kongzhi Yu Xinxi Jishu, 2017
DC breaker is one of the main equipment of HVDC system converter station. As an essential component of DC breaker, the electrical performance and reliability of the press-pack IGBT (insulated gate bipolar transistor) are particularly important.
LENG Guoqing, ZHAO Ge, JIN Rui, GAO Mingchao, WEN Jialiang, PAN Yan   +5 more
doaj  

Optimized Design in Current, Temperature and Stress Distributions for Paralleled Chips in Press-Pack IGBT Modules

CSEE Journal of Power and Energy Systems
In a press-pack insulated gate bipolar transistor (IGBT), a compact packaging structure forms a strong electromagnetic coupling, thermal coupling, and stress coupling, threatening current sharing, temperature sharing, and stress sharing of paralleled ...
Lubin Han, Lin Liang, Yong Kang
doaj   +1 more source

Steady-state analytical model for the trench insulated gate bipolar transistor

, 1995
A steady-state, physically-based analytical model for the Trench Insulated Gate Bipolar Transistor which accounts for a combined PIN diode - PNP transistor carrier dynamics is proposed. Previous models (i.e.
Udrea, F, Amaratunga, GAJ, ,
core