Results 101 to 110 of about 582,766 (203)

An intelligent IGBT gate driver IC with temperature compensated gate side collector current sensing

, 2020
A temperature compensation system is proposed to improve the accuracy of a gate side collector current measurement technique for the insulated-gate bipolar transistor (IGBT). This technique requires only access to the gate terminal of the IGBT. Therefore,
Nishio, Haruhiko, Wang, Mengqi, Sasaki, Masahiro, Ng, Wai Tung, Li, Rophina, Hiroyuki, Nakajima, Yu, Jingshu, Zhang, Weijia, Kawashima, Tetsuya   +8 more
core  

An advanced physics-based sub-circuit model of a punch-trough insulated gate bipolar transistor

, 2009
An advanced sub-circuit model of the punch-trough insulated gate bipolar transistor (PT IGBT) based on the physics of internal device operation has been described in this article.
Zhongfu Zhou, Petar Igic, Nebojsa Jankovic, Steve Batcup   +3 more
core   +1 more source

Assessment of Off-State Negative Gate Voltage Requirements for IGBT’s

, 1998
This paper addresses the need for off-state negative gate bias with insulated gate bipolar transistor (IGBT) devices that experience a dv/dt when in the off state.
Williams, BW, McNeill, JN, Sheng, K, Finney, SJ   +3 more
core  

Self-Turn-on-Free 5V Gate Driving for 1200V Scaled IGBT [PDF]

Negative biasing of the gate voltage in a scaled insulated gate bipolar transistor (IGBT) during the off-state was modeled and found to be effective against self-turn-on failures.
長谷川, 一徳, Hasegawa, Kazunori, Fukui, Munetoshi, Sudo, Masaki, Saraya, Takuya, 大村, 一郎, Takeuchi, Kiyoshi, Takakura, Toshihiko, Tsukuda, Masanori, Suzuki, Shinichi, Hiramoto, Toshiro, オオムラ, イチロウ, ハセガワ, カズノリ, Itou, Kazuo, Omura, Ichiro, Abe, Seiya, Ninomiya, Tamotsu, 安部, 征哉, アベ, セイヤ   +18 more
core   +1 more source

Mobility of Carriers in Strong Inversion Layers Associated with Threshold Voltage for Gated Transistors. [PDF]

Micromachines (Basel)
Yang HC, Chi SC, Huang BH, Lai TC, Yang HY.   +4 more
europepmc   +1 more source

Review of IGBT models

, 2000
In this paper, insulated gate bipolar transistor (IGBT) models published in the literature are reviewed, analyzed, compared and classified into different categories according to mathematical type, objectives, complexity, accuracy and speed.
Sheng, Kuang, Finney, Stephen J., Finney, Stephen Jon, Williams, Barry W., Williams, Barry Wayne, Sheng, K   +5 more
core  

Improved ASHCPWM with Reduced IGBT Switching Actions and Kalman Filter-Based Zero-Sequence Suppression for Open-End Winding PMSM Drives. [PDF]

Micromachines (Basel)
Zhang Y, Qu M, Xie H, Xia Y, Hu L.
europepmc   +1 more source

Thermal/Mechanical Characteristics Simulation Analysis of Solder Layer Damage in IGBT Modules. [PDF]

Micromachines (Basel)
Zhou J, Chen J, He L, Tang H, Wu X.
europepmc   +1 more source

Applicability Analysis of High-Voltage Transmission and Substation Equipment Based on Silicon Carbide Devices. [PDF]

Micromachines (Basel)
Zhang H, Nie M, Dong Q, Liu H, Jia P, Li Z, Fang Y.   +6 more
europepmc   +1 more source

A Novel Concept of Electron-Hole Enhancement for Superjunction Reverse-Conducting Insulated Gate Bipolar Transistor with Electron-Blocking Layer. [PDF]

Micromachines (Basel), 2023
Wang Z, Yang C, Huang X.
europepmc   +1 more source