Results 91 to 100 of about 582,766 (203)

750 A/6 500 V High Power Density IGBT Module for Rail Transit Application

机车电传动, 2016
Low loss is the key for high voltage Insulated Gate Bipolar Transistor (IGBT) design and manufacture. Based on "U"- shape enhanced double diffused metal oxide semiconductor(DMOS+) cell structure, enhanced controllable punch through(CPT+), variation of ...
LIU Guoyou, LUO Haihui, LI Qunfeng, HUANG Jianwei, QIN Rongzhen   +4 more
doaj  

Insulated gate bipolar transistor (IGBT) simulation using IG-Spice

, 2010
A physics-based insulated gate bipolar transistor (IGBT) model has been successfully implemented into a widely available circuit simulation package, IG-Spice.
Mitter, Chang Su
core  

Effects of gamma irradiation on the electrical characteristics of trench-gate non-punch-through insulated gate bipolar transistor

, 2019
We studied the effects of gamma-ray irradiation on the static and dynamic electrical characteristics of a trench-gate non-punch-through insulated gate bipolar transistor (IGBT) device.
Sun, Gwang Min, Shin, Chansun, Baek, Hani, Yoon, Tae-Sik   +3 more
core   +1 more source

Insulated-gate bipolar transistor formed in the bulk silicon and using «Silicon on insulator» technology

, 2020
Представлены результаты оптимизации конструктивно-технологических параметров приборных структур биполярного транзистора с изолированным затвором (БТИЗ), сформированного в стандартном кремнии и по технологии «Кремний на изоляторе» (КНИ ...
Stempitsky, V. R., Lovshenko, I. Yu., Ловшенко, И. Ю., Shelibak, I., Шелибак, И., Стемпицкий, В. Р.   +5 more
core  

Thermal stability of IGBT high-frequency operation

, 2000
Thermal stability of high-frequency insulated gate bipolar transistor (IGBT) operation is studied in this paper. The nonpunch-through IGBT is found to be stable when operated within its rated temperature.
Sheng, Kuang, Finney, Stephen J., Williams, Barry W.   +2 more
core   +1 more source

Three-Dimensional Insulated Gate Bipolar Transistor (IGBT) Development [PDF]

, 1992
A new insulated gate bipolar transistor structure, the 3D-IGBT, is presented. The 3D-IGBT utilizes selective epitaxial silicon to form a top contacted anode and still retain the cellular structure of vemcally oriented devices.
Neudeck, G.W., Gilbert, P.V.
core  

Physics-based model of planar-gate IGBT Including MOS side two-dimensional effects

, 2010
An existing physics-based insulated gate bipolar transistor (IGBT) model, which has been proven accurate for both inductive turn-off and inductive turn-on simulations, is modified to account for planar-gate IGBT 2-D effects at the MOS end of the drift ...
Bryant, Angus T., Angus Bryant, Hudgins, Jerry L., Bryant, A, Palmer, PR, ,, Liqing Lu, Palmer, Patrick R., Enrico Santi, Santi, Enrico, Patrick R. Palmer, Lu, Liqing, Lu, LQ, Hudgins, JL, Santi, E, Jerry L. Hudgins   +15 more
core   +1 more source

Design, Simulation and Fabrication of Insulated Gate Bipolar Transistors (IGBT) [PDF]

, 2003
This project serves as a study to determine the feasibility of the current CMOS toolsets and processes available at Semiconductor \u26 Microsystems Fabrication Laboratory (SMFL) for the fabrication of whole wafer power devices.
Jhaveri, Tejas K
core  

Physics-based insulated-gate bipolar transistor model with input capacitance correction

, 2015
Insulated-gate bipolar transistor (IGBT) terminal capacitances play an important role in IGBT switching transients. The terminal capacitance modelling is a difficult task because of their operating-point-dependent characteristics.
Palmer, PR, Otsuki, M, ,, Yang, X
core  

Analytical Model For The Insulated-Gate Bipolar Transistor Under All Free-Carrier Injection Conditions

, 1996
The insulated-gate bipolar transistor (IGBT) is the most advanced and promising power switching device. This paper presents an analytical model for the current-voltage characteristics of such a device.
Liou, J. J., Yue, Y., Batarseh, I.
core