Results 71 to 80 of about 16,299 (241)
A thermal network model considering thermal coupling effect and TIM degradation in IGBT modules
Energy Reports, 2023 Thermal interface materials (TIMs), as important materials for heat dissipation of insulated gate bipolar transistor (IGBT) modules, degrade under long-term thermal cycling, resulting in elevated junction temperatures and threatening the safe operation ...
Xiaotong Zhang +5 more
doaj +1 more source
IET Power Electronics, Volume 19, Issue 1, January/December 2026.This article presents a Fifteen‐level inverter topology that has a lesser number of switches (12) and can accommodate isolated DC sources. The total harmonic elimination (THD) of the proposed topology using genetic algorithm is within the IEEE 519 standards. Further, the fifteen‐level inverter is implemented in Hardware and firing pulses were generated
Yogesh Joshi +4 more
wiley +1 more source
Energies, 2020 State-of-the-art methods for determining thermal impedance networks for IGBT (Insulated Gate Bipolar Transistor) modules usually involves the establishment of the relationship between the measured transistor or diode voltage and temperature under ...
Humphrey Mokom Njawah Achiri +3 more
doaj +1 more source
A four‐step control for IGBT switching improvement using an active voltage gate driver
IET Power Electronics, 2022 Gate drivers form an essential interface between the high power transistors and low voltage control circuits in power converters to govern the transistor switching operations and maintain other ancillary functions.
Chen Li +5 more
doaj +1 more source
IET Power Electronics, Volume 19, Issue 1, January/December 2026.The multisource adaptive fusion CNN‐transformer method proposed in this study can provide theoretical and technical support for fault diagnosis of high‐voltage MCHBI. It has a promising potential for engineering applications. Abstract In high‐voltage applications, the number of cascaded H‐bridge inverter units is large, the failure probability ...
Weiman Yang +4 more
wiley +1 more source
General 3D Lumped Thermal Model with Various Boundary Conditions for High Power IGBT Modules [PDF]
, 2016 Accurate thermal dynamics modeling of high power Insulated Gate Bipolar Transistor (IGBT) modules is important information for the reliability analysis and thermal design of power electronic systems. However, the existing thermal models have their limits
Bahman, Amir Sajjad +2 more
core +2 more sources
IET Power Electronics, Volume 19, Issue 1, January/December 2026.This paper proposes a non‐contact method for measuring the turn‐off time of insulated‐gate bipolar transistor (IGBT) devices in modular multilevel converters (MMC) submodules, using the decay of load‐side common‐mode current. The technique leverages existing current‐sensing infrastructure and avoids intrusive modifications, enabling real‐time ...
Jiyun Liu +7 more
wiley +1 more source
Доклады Белорусского государственного университета информатики и радиоэлектроники, 2019 The results of the optimization of design and technological parameters device structures insulated-gate bipolar transistor (IGBT), formed in bulk silicon and using «Silicon on Insulator» (SOI) technology are presented.
S. Ibrahim +2 more
doaj
Numerical analysis and thermal fatigue life prediction of solder layer in a SiC-IGBT power module
Fracture and Structural Integrity, 2020 Limited by the mechanical properties of materials, silicon (Si) carbide insulated gate bipolar transistor (IGBT) can no longer meet the requirements of high power and high frequency electronic devices.
Dianhao Zhang +3 more
doaj +1 more source
Characterization of an integrated buck converter using infrared thermography [PDF]
, 2014 This study deals with new integrated systems for power electronics applications including wide-gap semiconductors. Integration of Silicon carbide (SiC) components provides for instance new perspectives with higher temperature ...
Haussener, Marion +4 more
core +2 more sources