Results 71 to 80 of about 621 (172)

Optimized Design in Current, Temperature and Stress Distributions for Paralleled Chips in Press-Pack IGBT Modules

CSEE Journal of Power and Energy Systems
In a press-pack insulated gate bipolar transistor (IGBT), a compact packaging structure forms a strong electromagnetic coupling, thermal coupling, and stress coupling, threatening current sharing, temperature sharing, and stress sharing of paralleled ...
Lubin Han, Lin Liang, Yong Kang
doaj   +1 more source

750 A/6 500 V High Power Density IGBT Module for Rail Transit Application

机车电传动, 2016
Low loss is the key for high voltage Insulated Gate Bipolar Transistor (IGBT) design and manufacture. Based on "U"- shape enhanced double diffused metal oxide semiconductor(DMOS+) cell structure, enhanced controllable punch through(CPT+), variation of ...
LIU Guoyou, LUO Haihui, LI Qunfeng, HUANG Jianwei, QIN Rongzhen   +4 more
doaj  

Research on the Press-pack IGBT with High SCSOA

Kongzhi Yu Xinxi Jishu, 2017
DC breaker is one of the main equipment of HVDC system converter station. As an essential component of DC breaker, the electrical performance and reliability of the press-pack IGBT (insulated gate bipolar transistor) are particularly important.
LENG Guoqing, ZHAO Ge, JIN Rui, GAO Mingchao, WEN Jialiang, PAN Yan   +5 more
doaj  

Promising Algorithm Addressing the Mechanism and Charac-teristic Curves of Insulated Gated Bipolar Transistor (IGBT)

Insulated Gate Bipolar Transistor (IGBT) may convey high current and sustain high breakdown voltages; it may provide high power control. In a sense, how IGBT demonstrates the capability of power control was not specifically described, and the equivalent bipolar junction transistors (BJT) activated by an applied bias to the insulated gate is intriguing.
Hsin-Chia Yang, Sung-Ching Chi, Pei-Jun Yang, Bo-Hao Huang   +3 more
openaire   +1 more source

Mobility of Carriers in Strong Inversion Layers Associated with Threshold Voltage for Gated Transistors. [PDF]

Micromachines (Basel)
Yang HC, Chi SC, Huang BH, Lai TC, Yang HY.   +4 more
europepmc   +1 more source

A Novel Concept of Electron-Hole Enhancement for Superjunction Reverse-Conducting Insulated Gate Bipolar Transistor with Electron-Blocking Layer. [PDF]

Micromachines (Basel), 2023
Wang Z, Yang C, Huang X.
europepmc   +1 more source

Applicability Analysis of High-Voltage Transmission and Substation Equipment Based on Silicon Carbide Devices. [PDF]

Micromachines (Basel)
Zhang H, Nie M, Dong Q, Liu H, Jia P, Li Z, Fang Y.   +6 more
europepmc   +1 more source

Genetic Algorithm-Optimized CNN-BiLSTM Framework for Predicting the Remaining Useful Life of IGBT Modules. [PDF]

Sensors (Basel)
Hao Y, Wu J, Zhang Z, Wang Y, Wang T, Liang Y.   +5 more
europepmc   +1 more source

Simulation Study on 6.5 kV SiC Trench Gate p-Channel Superjunction Insulated Gate Bipolar Transistor. [PDF]

Micromachines (Basel)
Kang KM, Hu JW, Huang CF.
europepmc   +1 more source

A Quasi-Resonant System for High-Frequency Trans-Spinal Magnetic Stimulation (HF-TSMS). [PDF]

IEEE Trans Biomed Eng
Marturano F, Straney D, Colella M, Chen YI, Ay I, Bonmassar G.   +5 more
europepmc   +1 more source