IEEE transactions on industrial electronics (1982. Print), 2020 Yanyong Yang, Pinjia Zhang
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Towards Prognostics for Electronics Components [PDF]
Electronics components have an increasingly critical role in avionics systems and in the development of future aircraft systems. Prognostics of such components is becoming a very important research field as a result of the need to provide aircraft ...
Celaya, Jose R. +3 more
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A Novel Concept of Electron-Hole Enhancement for Superjunction Reverse-Conducting Insulated Gate Bipolar Transistor with Electron-Blocking Layer. [PDF]
Micromachines (Basel), 2023 Wang Z, Yang C, Huang X.
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Mobility of Carriers in Strong Inversion Layers Associated with Threshold Voltage for Gated Transistors. [PDF]
Micromachines (Basel)Yang HC +4 more
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Insulated Gate Bipolar Transistor (IGBT) may convey high current and sustain high breakdown voltages; it may provide high power control. In a sense, how IGBT demonstrates the capability of power control was not specifically described, and the equivalent bipolar junction transistors (BJT) activated by an applied bias to the insulated gate is intriguing.
Hsin-Chia Yang +3 more
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Applicability Analysis of High-Voltage Transmission and Substation Equipment Based on Silicon Carbide Devices. [PDF]
Micromachines (Basel)Zhang H +6 more
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Design and optimization of IGBT gate drivers for high insulation voltage up to 30kV
, 2016 International audienceIn this article, a design methodology tooptimize IGBT gate drivers for high insulation voltage capability(up to 30kV) is proposed.
Am, Sokchea +3 more
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Genetic Algorithm-Optimized CNN-BiLSTM Framework for Predicting the Remaining Useful Life of IGBT Modules. [PDF]
Sensors (Basel)Hao Y +5 more
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Simulation Study on 6.5 kV SiC Trench Gate p-Channel Superjunction Insulated Gate Bipolar Transistor. [PDF]
Micromachines (Basel)Kang KM, Hu JW, Huang CF.
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Remaining useful lifetime estimation for discrete power electronic devices using physics-informed neural network. [PDF]
Sci Rep, 2023 Lu Z, Guo C, Liu M, Shi R.
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