Results 131 to 140 of about 621 (172)
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IEEE Transactions on Power Electronics, 1990
It is shown that a nonquasi-static analysis must be used to describe the transient current and voltage waveforms of the IGBT (insulated-gate bipolar transistor). The nonquasi-static analysis is necessary because the transports of electrons and holes are coupled for the low-gain, high-level injection conditions, and because the quasi-neutral base width ...
A R Hefner
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It is shown that a nonquasi-static analysis must be used to describe the transient current and voltage waveforms of the IGBT (insulated-gate bipolar transistor). The nonquasi-static analysis is necessary because the transports of electrons and holes are coupled for the low-gain, high-level injection conditions, and because the quasi-neutral base width ...
A R Hefner
exaly +2 more sources
Modeling and characterization of the insulated gate bipolar transistor (IGBT) for SPICE simulation
[1993] Proceedings of the 5th International Symposium on Power Semiconductor Devices and ICs, 2002A semiempirical CAD (computer-aided design) model for power IGBTs (insulated-gate bipolar transistors) which is physically based and uses subcircuit representation is presented. The model has sufficient flexibility to account for the unique characteristics of IGBT operation, while still retaining a simple form with readily extractable model parameters.
Z. Shen, T.P. Chow
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Identification of failure precursor parameters for Insulated Gate Bipolar Transistors (IGBTs)
2008 International Conference on Prognostics and Health Management, 2008Insulated Gate Bipolar Transistors (IGBTs) are used in applications such as the switching of automobile and train traction motors, high voltage power supplies, and in aerospace applications such as switch mode power supplies (SMPS) to regulate DC voltage.
Nishad Patil +3 more
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A Bipolar "Command Charge" Pulser for Lasers with Insulated Gate Bipolar Transistors (IGBT's)
Twentieth Conference Record on Power Modulator Symposium, 20051. Abstract The design approach and practical results on a 2 joule, 26 kV, 6,5kHz pulser, using IGBT's as primary switches, are reported. These switches are arranged in a conventional inverter bridge configuration. A voltage step-up pulse transformer, with high voltage secondary capacitor, serves as load.
G.L. Bredenkamp, J.J. Nel, D.J. Mulder
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Thermal reliability of power insulated gate bipolar transistor (IGBT) modules
Twelfth Annual IEEE Semiconductor Thermal Measurement and Management Symposium. Proceedings, 2002Thermal behavior of power insulated gate bipolar transistor (IGBT) modules was studied in this paper experimentally. Due primarily to the thermal mismatch in IGBT sandwich structure, thermal stress induced solder fatigue failures, such as the forming and growing of voids and cracks in IGBT solder layers, were quasi-dynamically observed in thermal ...
null Wuchen Wu +6 more
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Radiation Displacement Defect in SuperJunction Insulated Gate Bipolar Transistor (SJ-IGBT)
2021 IEEE Region 10 Symposium (TENSYMP), 2021In this work, we report the impact of displacement defect due to radiation effect in the superjunction insulated gate bipolar transistor (SJ-IGBT). Simulations on its DC characteristics, breakdown voltage and power dissipation are carried out via technology computer-aided design (TCAD) simulation.
Gyeongyeop Lee +2 more
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Materials Science Forum, 2005
In this paper, the performance of high-voltage (10kV) 4H-SiC n- and p-channel IGBTs and n-channel MOS-Gated Bipolar Transistor (MGT) are investigated and compared using 2- dimensional numerical simulations. We have found that the MGT in SiC is not suitable for applications at high blocking voltages and the p-channel IGBT is a better choice because of a
Lin Zhu, S. Balachandran, T.P. Chow
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In this paper, the performance of high-voltage (10kV) 4H-SiC n- and p-channel IGBTs and n-channel MOS-Gated Bipolar Transistor (MGT) are investigated and compared using 2- dimensional numerical simulations. We have found that the MGT in SiC is not suitable for applications at high blocking voltages and the p-channel IGBT is a better choice because of a
Lin Zhu, S. Balachandran, T.P. Chow
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A novel gate geometry for the IGBT: the trench planar insulated gate bipolar transistor (TPIGBT)
IEEE Electron Device Letters, 1999This letter demonstrates a simple way to improve the performance of a planar, fine lithography insulated gate bipolar transistor (IGBT), by incorporating a trench gate between the cathode cells. The results of this new trench-planar IGBT (TPIGBT) clearly demonstrate a significant reduction in the voltage drop without degrading the breakdown voltage ...
O. Spulber +5 more
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Modern insulated gate bipolar transistor (IGBT) gate driving methods for robustness and reliability
2020This chapter has presented an overview of state-of-the-art advanced gate driver techniques for enhancing the reliability of IGBT modules. Broadly speaking, methods can be classified in detection methods, optimization methods, and protection methods. Additionally, optimization and protection methods can be roughly classified in simple (and cheap) and ...
Luo, Haoze +2 more
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Hardware design of magnetically isolated gate driver using Insulated Gate Bipolar Transistor (IGBT) [PDF]
2017 IEEE 8th Control and System Graduate Research Colloquium (ICSGRC), 2017 This paper presents the hardware design of compact H-bridge magnetically isolated gate driver using Insulated Gate Bipolar Transistor (IGBT) as power device. The new Gate Driver (GD) circuit is tested experimentally with various switching frequency to observe the performance of the circuit.
Siti Zaliha Mohammad Noor +1 more
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