Results 131 to 140 of about 621 (173)
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Series Connection of Insulated Gate Bipolar Transistors (IGBTs)
IEEE Transactions on Power Electronics, 2012High-voltage switches required in present power electronics applications are realized by connecting existing devices in series. Unequal sharing of voltage across series-connected devices can be minimized by using active gate control techniques, snubber circuits, and active clamping circuits.
Ruchira Withanage, Noel Shammas
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A Bipolar "Command Charge" Pulser for Lasers with Insulated Gate Bipolar Transistors (IGBT's)
Twentieth Conference Record on Power Modulator Symposium, 20051. Abstract The design approach and practical results on a 2 joule, 26 kV, 6,5kHz pulser, using IGBT's as primary switches, are reported. These switches are arranged in a conventional inverter bridge configuration. A voltage step-up pulse transformer, with high voltage secondary capacitor, serves as load.
G.L. Bredenkamp, J.J. Nel, D.J. Mulder
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Modeling and characterization of the insulated gate bipolar transistor (IGBT) for SPICE simulation
[1993] Proceedings of the 5th International Symposium on Power Semiconductor Devices and ICs, 2002A semiempirical CAD (computer-aided design) model for power IGBTs (insulated-gate bipolar transistors) which is physically based and uses subcircuit representation is presented. The model has sufficient flexibility to account for the unique characteristics of IGBT operation, while still retaining a simple form with readily extractable model parameters.
Z. Shen, T.P. Chow
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Radiation Displacement Defect in SuperJunction Insulated Gate Bipolar Transistor (SJ-IGBT)
2021 IEEE Region 10 Symposium (TENSYMP), 2021In this work, we report the impact of displacement defect due to radiation effect in the superjunction insulated gate bipolar transistor (SJ-IGBT). Simulations on its DC characteristics, breakdown voltage and power dissipation are carried out via technology computer-aided design (TCAD) simulation.
Gyeongyeop Lee +2 more
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Identification of failure precursor parameters for Insulated Gate Bipolar Transistors (IGBTs)
2008 International Conference on Prognostics and Health Management, 2008Insulated Gate Bipolar Transistors (IGBTs) are used in applications such as the switching of automobile and train traction motors, high voltage power supplies, and in aerospace applications such as switch mode power supplies (SMPS) to regulate DC voltage.
Nishad Patil +3 more
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Thermal reliability of power insulated gate bipolar transistor (IGBT) modules
Twelfth Annual IEEE Semiconductor Thermal Measurement and Management Symposium. Proceedings, 2002Thermal behavior of power insulated gate bipolar transistor (IGBT) modules was studied in this paper experimentally. Due primarily to the thermal mismatch in IGBT sandwich structure, thermal stress induced solder fatigue failures, such as the forming and growing of voids and cracks in IGBT solder layers, were quasi-dynamically observed in thermal ...
null Wuchen Wu +6 more
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Silicon IGBT (Insulated Gate Bipolar Transistor)
2011The silicon IGBT is arguably the most successful innovation in power semiconductor devices during the past three-decades. By using a combination of bipolar current flow controlled using an MOS-gate structure, the power gain was increased a million fold when compared with existing power bipolar junction transistors and power MOSFET structures with high ...
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A novel gate geometry for the IGBT: the trench planar insulated gate bipolar transistor (TPIGBT)
IEEE Electron Device Letters, 1999This letter demonstrates a simple way to improve the performance of a planar, fine lithography insulated gate bipolar transistor (IGBT), by incorporating a trench gate between the cathode cells. The results of this new trench-planar IGBT (TPIGBT) clearly demonstrate a significant reduction in the voltage drop without degrading the breakdown voltage ...
O. Spulber +5 more
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Modern insulated gate bipolar transistor (IGBT) gate driving methods for robustness and reliability
2020This chapter has presented an overview of state-of-the-art advanced gate driver techniques for enhancing the reliability of IGBT modules. Broadly speaking, methods can be classified in detection methods, optimization methods, and protection methods. Additionally, optimization and protection methods can be roughly classified in simple (and cheap) and ...
Luo, Haoze +2 more
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1.2 kV trench insulated gate bipolar transistors (IGBT's) with ultralow on-resistance
IEEE Electron Device Letters, 1999In this letter, we report the full development of 1.2 kV Trench IGBT's with ultralow on-resistance, latch-up free operation and highly superior overall performance when compared to state of the art IGBT's. The minimum forward voltage drop at the standard current density of 100 A/cm/sup 2/ was 1.1 V for nonirradiated devices and 2.1 V for irradiated ...
F. Udrea +6 more
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