Results 151 to 160 of about 582,766 (203)
Comprehensive analysis of faults and diagnosis techniques in cascaded multi-level inverters. [PDF]
HeliyonGatla RK +7 more
europepmc +1 more source
The principle of magnetic flux switch. [PDF]
Sci RepHeidary A, Ghaffarian Niasar M, Popov M.
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2020 6th International Conference on Applied System Innovation (ICASI), 2020
Insulated Gate Bipolar Transistor (IGBT) has demonstrated the capability of providing relatively high current at various breakdown voltages. The driving mechanism relies on the input bias applied on the insulated gate, which is equivalent to a MOSFET transistor with high input impedance.
Sung-Ching Chi, Hsin-Chia Yang
exaly +2 more sources
Insulated Gate Bipolar Transistor (IGBT) has demonstrated the capability of providing relatively high current at various breakdown voltages. The driving mechanism relies on the input bias applied on the insulated gate, which is equivalent to a MOSFET transistor with high input impedance.
Sung-Ching Chi, Hsin-Chia Yang
exaly +2 more sources
Precursor Parameter Identification for Insulated Gate Bipolar Transistor (IGBT) Prognostics
IEEE Transactions on Reliability, 2009Precursor parameters have been identified to enable development of a prognostic approach for insulated gate bipolar transistors (IGBT). The IGBT were subjected to thermal overstress tests using a transistor test board until device latch-up. The collector-emitter current, transistor case temperature, transient and steady state gate voltages, and ...
Diganta Das, Kai Goebel, Michael Pecht
exaly +2 more sources
IEEE Transactions on Power Electronics, 1991
The drive circuit requirements of the OGBT are explained with the aid of an analytical model. This model can be used to describe the turn-on and turn-off, gate and anode, current and voltage waveforms for general external drive, load, and feedback circuits.
A R Hefner
exaly +2 more sources
The drive circuit requirements of the OGBT are explained with the aid of an analytical model. This model can be used to describe the turn-on and turn-off, gate and anode, current and voltage waveforms for general external drive, load, and feedback circuits.
A R Hefner
exaly +2 more sources
IEEE Transactions on Power Electronics, 1990
It is shown that a nonquasi-static analysis must be used to describe the transient current and voltage waveforms of the IGBT (insulated-gate bipolar transistor). The nonquasi-static analysis is necessary because the transports of electrons and holes are coupled for the low-gain, high-level injection conditions, and because the quasi-neutral base width ...
A R Hefner
exaly +2 more sources
It is shown that a nonquasi-static analysis must be used to describe the transient current and voltage waveforms of the IGBT (insulated-gate bipolar transistor). The nonquasi-static analysis is necessary because the transports of electrons and holes are coupled for the low-gain, high-level injection conditions, and because the quasi-neutral base width ...
A R Hefner
exaly +2 more sources
A Novel Gate Geometry for the IGBT: The Trench Planar Insulated Gate Bipolar Transistor (TPIGBT)
IEEE Electron Device Letters, 1999This letter demonstrates a simple way to improve the performance of a planar, fine lithography insulated gate bipolar transistor (IGBT), by incorporating a trench gate between the cathode cells. The results of this new trench-planar IGBT (TPIGBT) clearly demonstrate a significant reduction in the voltage drop without degrading the breakdown voltage ...
O Spulber, S Hardikar, E M S Narayanan
exaly +2 more sources
1.2 kV Trench Insulated Gate Bipolar Transistors (IGBT's) With Ultralow On-Resistance
IEEE Electron Device Letters, 1999In this letter, we report the full development of 1.2 kV Trench IGBT's with ultralow on-resistance, latch-up free operation and highly superior overall performance when compared to state of the art IGBT's. The minimum forward voltage drop at the standard current density of 100 A/cm/sup 2/ was 1.1 V for nonirradiated devices and 2.1 V for irradiated ...
Florin Udrea +2 more
exaly +2 more sources
Analysis of the dynamic avalanche of punch through insulated gate bipolar transistor (PT-IGBT)
Solid-State Electronics, 2009 Abstract In the paper proposed here, we are studying the dynamic avalanche from experimental results first, dynamic avalanche is identified on a punch through insulated gate bipolar transistor (PT-IGBT) module 1200 V–300 A from Mitsubishi. Secondly, the phenomenon is analysed thanks to simple solid state devices equations.
Lefranc, Pierre +3 more
openaire +4 more sources