Results 151 to 160 of about 621 (172)

Experimental-theoretical thermal and electrical analyses of insulated gate bipolar transistors (IGBT) power module

2017 16th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm), 2017
Applications of high-power insulated gate bipolar transistor (IGBT) modules include railway traction, motor drives, and hybrid electric vehicles. The reliability of these semiconductor devices is tightly linked to the operating junction temperatures of IGBT and diode chips present in them.
Philippe R. d'Egmont, Carolina P. Naveira-Cotta, Robson F. S. Dias, Christopher P. Tostado, Fernando P. Duda, Kelvin Chen   +5 more
openaire   +1 more source

Series connection of insulated gate bipolar transistors (IGBTs)

2005 European Conference on Power Electronics and Applications, 2005
R. Withanage, N. Shammas, S. Tennakoon
openaire   +1 more source

Silicon Carbide (SiC) Insulated Gate Bipolar Transistors (IGBTs) for High Voltage Applications

The significant interest that SiC has attracted over the last decades, coupled with the ease of voltage control and low conduction losses of the IGBTs, have led to their development and sample fabrication. Although these devices demonstrated the advantages that SiC IGBTs can bring in High Voltage power applications, their characteristics are not yet ...
openaire   +2 more sources

High Power Insulated Gate Bipolar Transistors (IGBTs)

Extended Abstracts of the 1988 International Conference on Solid State Devices and Materials, 1988
H. Ohashi, A. Nakagawa, M. Hideshima
openaire   +1 more source

Insulated gate bipolar transistor (IGBT) simulation using IG-Spice

2014
Master of ...
openaire   +1 more source

Thermal Simulation of Switching Pulses in an Insulated Gate Bipolar Transistor (IGBT) Power Module

2015
Abstract : A simulation was performed to predict the thermal behavior of a commercial power module with silicon insulated gate bipolar transistors (IGBTs) during switching of multiple power pulses.
openaire   +1 more source

Simulation Study of a Thyristor Conduction-Insulated Gate Bipolar Transistor (TC-IGBT) With a p-n-p Base and an n-p-n Collector for Reducing Turn-Off Loss

IEEE Transactions on Electron Devices, 2020
Mengxuan Jiang, Longjiang Gao
exaly  

Design and fabrication of insulated gate bipolar transistor (IGBT) using wafer bonding technology

2008
With the enhanced performance of the novel Lateral IGBT can be proved through simulation, its fabrication remains a challenge. In this project, we investigated many different fabrication methodologies, and wafer bonding is found to be only viable choice.
Tan, Cher Ming., Tse, Man Siu.
openaire   +1 more source

A High-Precision Adaptive Thermal Network Model for Monitoring of Temperature Variations in Insulated Gate Bipolar Transistor (IGBT) Modules

Energies, 2018
Ning An, Mingxing Du, Kexin Wei
exaly  

A New Fin p-Body Insulated Gate Bipolar Transistor With Low Miller Capacitance

IEEE Electron Device Letters, 2015
Hao Feng, Yuichi Onozawa, Johnny K O Sin   +2 more
exaly