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Research on the Short-Circuit Characteristics of Trench-Type SiC Power MOSFETs Under Single and Repetitive Pulse Strikes. [PDF]
Micromachines (Basel)Liu L, Pang B, Li S, Zhen Y, Li G.
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Precursor Parameter Identification for Insulated Gate Bipolar Transistor (IGBT) Prognostics
IEEE Transactions on Reliability, 2009Precursor parameters have been identified to enable development of a prognostic approach for insulated gate bipolar transistors (IGBT). The IGBT were subjected to thermal overstress tests using a transistor test board until device latch-up. The collector-emitter current, transistor case temperature, transient and steady state gate voltages, and ...
Diganta Das +2 more
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IEEE Transactions on Power Electronics, 1991
The drive circuit requirements of the OGBT are explained with the aid of an analytical model. This model can be used to describe the turn-on and turn-off, gate and anode, current and voltage waveforms for general external drive, load, and feedback circuits.
A R Hefner
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The drive circuit requirements of the OGBT are explained with the aid of an analytical model. This model can be used to describe the turn-on and turn-off, gate and anode, current and voltage waveforms for general external drive, load, and feedback circuits.
A R Hefner
exaly +3 more sources
"Insulated gate bipolar transistor (IGBT) with a trench gate structure "
1987 International Electron Devices Meeting, 1987This paper describes an improved IGBT with a trench gate structure, which demonstrates a low forward voltage drop of 1.4 volts at a forward conduction current density of 200A/cm2. This device structure was fabricated using a self-aligned process that permits closely spaced vertical trench gates with a unit cell of 8 µm.
H.R. Chang +3 more
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Modeling and characterization of the insulated gate bipolar transistor (IGBT) for SPICE simulation
[1993] Proceedings of the 5th International Symposium on Power Semiconductor Devices and ICs, 2002A semiempirical CAD (computer-aided design) model for power IGBTs (insulated-gate bipolar transistors) which is physically based and uses subcircuit representation is presented. The model has sufficient flexibility to account for the unique characteristics of IGBT operation, while still retaining a simple form with readily extractable model parameters.
Z. Shen, T.P. Chow
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Thermal reliability of power insulated gate bipolar transistor (IGBT) modules
Twelfth Annual IEEE Semiconductor Thermal Measurement and Management Symposium. Proceedings, 2002Thermal behavior of power insulated gate bipolar transistor (IGBT) modules was studied in this paper experimentally. Due primarily to the thermal mismatch in IGBT sandwich structure, thermal stress induced solder fatigue failures, such as the forming and growing of voids and cracks in IGBT solder layers, were quasi-dynamically observed in thermal ...
null Wuchen Wu +6 more
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2020 6th International Conference on Applied System Innovation (ICASI), 2020
Insulated Gate Bipolar Transistor (IGBT) has demonstrated the capability of providing relatively high current at various breakdown voltages. The driving mechanism relies on the input bias applied on the insulated gate, which is equivalent to a MOSFET transistor with high input impedance.
Hsin-Chia Yang
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Insulated Gate Bipolar Transistor (IGBT) has demonstrated the capability of providing relatively high current at various breakdown voltages. The driving mechanism relies on the input bias applied on the insulated gate, which is equivalent to a MOSFET transistor with high input impedance.
Hsin-Chia Yang
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2021 7th International Conference on Applied System Innovation (ICASI), 2021
Power devices have been overwhelmingly popular for the last decades. Insulated Gate Bipolar Transistor (IGBT) is quite dominant for the capability of providing relatively high current at pretty high sustaining breakdown voltages. The underlying bipolar junction transistors (including NPN and PNP) get activated as the bias is applied to the isolated ...
Hsin-Chia Yang
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Power devices have been overwhelmingly popular for the last decades. Insulated Gate Bipolar Transistor (IGBT) is quite dominant for the capability of providing relatively high current at pretty high sustaining breakdown voltages. The underlying bipolar junction transistors (including NPN and PNP) get activated as the bias is applied to the isolated ...
Hsin-Chia Yang
exaly +2 more sources
A novel gate geometry for the IGBT: the trench planar insulated gate bipolar transistor (TPIGBT)
IEEE Electron Device Letters, 1999This letter demonstrates a simple way to improve the performance of a planar, fine lithography insulated gate bipolar transistor (IGBT), by incorporating a trench gate between the cathode cells. The results of this new trench-planar IGBT (TPIGBT) clearly demonstrate a significant reduction in the voltage drop without degrading the breakdown voltage ...
O. Spulber +5 more
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