Results 171 to 172 of about 621 (172)

3D scaling for insulated gate bipolar transistors (IGBTs) with low Vce(sat).

Kazuo Tsutsui, Kuniyuki Kakushima, Takuya Hoshii, A. Nakajima, Shinichi Nishizawa, Hitoshi Wakabayashi, Iriya Muneta, K. Sato, Tomoko Matsudai, Wataru Saito, Takuya Saraya, K. Itou, M. Fukui, S. Suzuki, Masaharu Kobayashi, T. Takakura, Toshiro Hiramoto, Atsushi Ogura, Y. Numasawa, Ichiro Omura, Hiromichi Ohashi, Hiroshi Iwai   +21 more
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Netzwerksimulation des Insulated Gate Bipolar Transistor (IGBT).

openaire   +1 more source