Results 171 to 180 of about 582,766 (203)
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Materials Science Forum, 2005
In this paper, the performance of high-voltage (10kV) 4H-SiC n- and p-channel IGBTs and n-channel MOS-Gated Bipolar Transistor (MGT) are investigated and compared using 2- dimensional numerical simulations. We have found that the MGT in SiC is not suitable for applications at high blocking voltages and the p-channel IGBT is a better choice because of a
Lin Zhu, S. Balachandran, T.P. Chow
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In this paper, the performance of high-voltage (10kV) 4H-SiC n- and p-channel IGBTs and n-channel MOS-Gated Bipolar Transistor (MGT) are investigated and compared using 2- dimensional numerical simulations. We have found that the MGT in SiC is not suitable for applications at high blocking voltages and the p-channel IGBT is a better choice because of a
Lin Zhu, S. Balachandran, T.P. Chow
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Silicon IGBT (Insulated Gate Bipolar Transistor)
2011The silicon IGBT is arguably the most successful innovation in power semiconductor devices during the past three-decades. By using a combination of bipolar current flow controlled using an MOS-gate structure, the power gain was increased a million fold when compared with existing power bipolar junction transistors and power MOSFET structures with high ...
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Modern insulated gate bipolar transistor (IGBT) gate driving methods for robustness and reliability
2020This chapter has presented an overview of state-of-the-art advanced gate driver techniques for enhancing the reliability of IGBT modules. Broadly speaking, methods can be classified in detection methods, optimization methods, and protection methods. Additionally, optimization and protection methods can be roughly classified in simple (and cheap) and ...
Luo, Haoze +2 more
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Impact of dormancy periods on power cycling of insulated gate bipolar transistors (IGBTS)
2016 IEEE Accelerated Stress Testing & Reliability Conference (ASTR), 2016Power cycling is a testing method for power semiconductor devices wherein switching functions are simulated to generate heat and raise junction temperature instead of using a chamber. Failure analysis of devices following the test can provide valuable insight into the failure modes and mechanisms of power electronic devices. Most switching applications
Nathan Valentine, Diganta Das
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High accuracy SPICE behavioral macromodeling of insulated gate bipolar transistor (IGBT)
APEC '98 Thirteenth Annual Applied Power Electronics Conference and Exposition, 2002This paper presents a new behavioral IGBT macromodel, that uses the enhanced capabilities of the nonlinear controlled sources implemented in modern SPICE like simulators. It describes the device's internal static equations directly with "in line equation" controlled sources and the nonlinear voltage dependent gate capacitances are piece-wise-linear ...
A. Maxim, D. Andreu, J. Boucher
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2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe), 2019
This paper presents a new gate driver concept that allows an online, open-loop adjustment of the switching behavior of power semiconductors during operation. An inductive impedance instead of an ohmic impedance enables the required adjustable gate current and thus the desired gate voltage curve.
Stamer, Fabian +2 more
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This paper presents a new gate driver concept that allows an online, open-loop adjustment of the switching behavior of power semiconductors during operation. An inductive impedance instead of an ohmic impedance enables the required adjustable gate current and thus the desired gate voltage curve.
Stamer, Fabian +2 more
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Improvement of the Safe Operating Area for P-Channel Insulated-Gate Bipolar Transistors (IGBTs)
Japanese Journal of Applied Physics, 1991A p-channel insulated-gate bipolar transistor (IGBT), which is supposed to be useful for many applications especially for inverters, is developed. The SOA (safe operating area) of p-channel IGBTs is narrower than that of n-channel IGBTs because of the positive-feedback mechanism between a high rate of the avalanche multiplication of electrons and ...
Katsunori Ueno +4 more
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Thermal and electrical evaluation of insulated gate bipolar transistor (IGBT) power modules
High Temperatures-High PressuresThe thermal reliability of two different high-power insulated gate bipolar transistor (IGBT) modules was studied under both conduction and switching regimes by experimental and numerical approaches. Indeed, the reliability of semiconductor devices is tightly linked to the junction temperatures reached in the IGBT, which is a function of the diode chips
Kelvin Chen +6 more
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Analysis of non-punch through trench emitter insulated gate bipolar transistor (IGBT)
1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings, 2002The modelling of steady-state characteristics in a trench emitter IGBT structure is presented. The semiconductor equations were solved in two dimensions with physical effects such as carrier-carrier scattering mobility, SRH and Auger recombination included.
L. Sabesan +4 more
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IEEE Transactions on Electron Devices, 1998
The switching performance of silicon (Si) punchthrough (PT) and a nonpunchthrough (NPT) insulated gate bipolar transistors (IGBT's) is compared under zero voltage switching (ZVS), both experimentally and using two-dimensional (2-D) device simulator. Extensive experimental results are obtained for both the devices under ZVS turn-on and turn-off, under a
S. Pendharkar, K. Shenai
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The switching performance of silicon (Si) punchthrough (PT) and a nonpunchthrough (NPT) insulated gate bipolar transistors (IGBT's) is compared under zero voltage switching (ZVS), both experimentally and using two-dimensional (2-D) device simulator. Extensive experimental results are obtained for both the devices under ZVS turn-on and turn-off, under a
S. Pendharkar, K. Shenai
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