Results 161 to 170 of about 621 (173)

The Superjunction Insulated Gate Bipolar Transistor Optimization and Modeling

IEEE Transactions on Electron Devices, 2010
Florin Udrea, Marina Antoniou, Friedhelm Bauer   +2 more
exaly  

Physics-of-Failure, Condition Monitoring, and Prognostics of Insulated Gate Bipolar Transistor Modules: A Review

IEEE Transactions on Power Electronics, 2015
Hyunseok Oh, Byeng D Youn, Bongtae Han
exaly  

Test Scheme and Degradation Model of Accumulated Electrostatic Discharge (ESD) Damage for Insulated Gate Bipolar Transistor (IGBT) Prognostics

IEEE Transactions on Device and Materials Reliability, 2019
Hyunseok Oh, Junmin Lee, Chan Hee Park
exaly  

A dynamic n-buffer insulated gate bipolar transistor

Solid-State Electronics, 2001
Florin Udrea, G A J Amaratunga
exaly  

Increase of the Reliability of the Junction Terminations of Reverse-Conducting Insulated Gate Bipolar Transistor by Appropriate Backside Layout Design

IEEE Electron Device Letters, 2014
Wenliang Zhang, Xiaoli Tian, Yangjun Zhu   +2 more
exaly  

Investigation of the Dual Implant Reverse-Conducting SuperJunction Insulated-Gate Bipolar Transistor

IEEE Electron Device Letters, 2019
Emma Findlay, Florin Udrea, Marina Antoniou   +2 more
exaly  

Electrical performance of insulated gated bipolar transistor (IGBT) addressed by promising mechanism

IET Conference Proceedings
Hsin-Chia Yang, Sung-Ching Chi, Pei-Jun Yang, Bo-Hao Huang, Jin-An Kuo, Pei-Chi Wu, Yi-Sheng Peng, Zhen-Yu Cai   +7 more
openaire   +1 more source

AN ANALYTICAL MODEL ON THE TRANSIENT CHARACTERISTIC OF INSULATED GATE BIPOLAR TRANSISTOR (IGBT)

2014
openaire   +1 more source

An Extended Model for a Punch Through (PT) Trench Insulated Gate Bipolar Transistor (IGBT) and Its Transient Characteristics

2020
exaly  

Monolithically integrated power IGBT device (Insulated Gate Bipolar Transistor)

2006
TORRES ANTONINO, SUERI STEFANO, PATTI DAVIDE   +2 more
openaire   +1 more source