Results 161 to 170 of about 621 (172)

Insulated Gate Bipolar Transistor IGBT Theory and Design

2003
openaire   +1 more source

Physics-of-Failure, Condition Monitoring, and Prognostics of Insulated Gate Bipolar Transistor Modules: A Review

IEEE Transactions on Power Electronics, 2015
Hyunseok Oh, Bongtae Han, Patrick Mccluskey   +2 more
exaly  

The Superjunction Insulated Gate Bipolar Transistor Optimization and Modeling

IEEE Transactions on Electron Devices, 2010
Marina Antoniou, F Udrea, Friedhelm Bauer   +2 more
exaly  

Increase of the Reliability of the Junction Terminations of Reverse-Conducting Insulated Gate Bipolar Transistor by Appropriate Backside Layout Design

IEEE Electron Device Letters, 2014
Wenliang Zhang, Yangjun Zhu, Xiaoli Tian   +2 more
exaly  

Physics‐based insulated‐gate bipolar transistor model with input capacitance correction

IET Power Electronics, 2015
Xin Yang, Patrick R Palmer
exaly  

Test Scheme and Degradation Model of Accumulated Electrostatic Discharge (ESD) Damage for Insulated Gate Bipolar Transistor (IGBT) Prognostics

IEEE Transactions on Device and Materials Reliability, 2019
Junmin Lee, Hyunseok Oh, Chan Hee Park
exaly  

Electrical method to measure the transient thermal impedance of insulated gate bipolar transistor module

IET Power Electronics, 2015
Guo-Quan Lu, Yunhui Mei
exaly  

AN ANALYTICAL MODEL ON THE TRANSIENT CHARACTERISTIC OF INSULATED GATE BIPOLAR TRANSISTOR (IGBT)

2014
openaire   +1 more source

Electrical performance of insulated gated bipolar transistor (IGBT) addressed by promising mechanism

IET Conference Proceedings
Hsin-Chia Yang, Sung-Ching Chi, Pei-Jun Yang, Bo-Hao Huang, Jin-An Kuo, Pei-Chi Wu, Yi-Sheng Peng, Zhen-Yu Cai   +7 more
openaire   +1 more source

An Extended Model for a Punch Through (PT) Trench Insulated Gate Bipolar Transistor (IGBT) and Its Transient Characteristics

2020
exaly