Results 181 to 190 of about 16,299 (241)
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IEEE Transactions on Power Electronics, 1990
It is shown that a nonquasi-static analysis must be used to describe the transient current and voltage waveforms of the IGBT (insulated-gate bipolar transistor). The nonquasi-static analysis is necessary because the transports of electrons and holes are coupled for the low-gain, high-level injection conditions, and because the quasi-neutral base width ...
A R Hefner
exaly +2 more sources
It is shown that a nonquasi-static analysis must be used to describe the transient current and voltage waveforms of the IGBT (insulated-gate bipolar transistor). The nonquasi-static analysis is necessary because the transports of electrons and holes are coupled for the low-gain, high-level injection conditions, and because the quasi-neutral base width ...
A R Hefner
exaly +2 more sources
Energies, 2018 This paper proposes a novel method for optimizing the Cauer-type thermal network model considering both the temperature influence on the extraction of parameters and the errors caused by the physical structure.
Ning An, Mingxing Du, Zhen Hu
exaly +2 more sources
650 V Super-Junction Insulated Gate Bipolar Transistor Based on 45 μm Ultrathin Wafer Technology
IEEE Electron Device Letters, 2022In this letter, 650 V generation I (thin) and generation II (ultrathin) super-junction insulated gate bipolar transistors (SJ-IGBT) based on deep trench etching and refilling processes are manufactured.
Yuzhou Wu +6 more
semanticscholar +1 more source
Physics‐based insulated‐gate bipolar transistor model with input capacitance correction
IET Power Electronics, 2015 Xin Yang, Patrick R Palmer
exaly +2 more sources
A New Fin p-Body Insulated Gate Bipolar Transistor With Low Miller Capacitance
IEEE Electron Device Letters, 2015Hao Feng, Wentao Yang, Yuichi Onozawa
exaly +2 more sources
A transient model for insulated gate bipolar transistors (IGBTs)
International Journal of Electronics, 2008In this paper, we present a physics-based model for the non punch-through (NPT) insulated gate bipolar transistor (IGBT) during transient turn off period. The steady state part of the model is derived from the solution of the ambipolar diffusion equation in the drift region of the NPT IGBT.
Sehwan Ryu +5 more
openaire +1 more source
Series Connection of Insulated Gate Bipolar Transistors (IGBTs)
IEEE Transactions on Power Electronics, 2012High-voltage switches required in present power electronics applications are realized by connecting existing devices in series. Unequal sharing of voltage across series-connected devices can be minimized by using active gate control techniques, snubber circuits, and active clamping circuits.
Ruchira Withanage, Noel Shammas
openaire +1 more source
Transactions of the Institute of Measurement and Control, 2020
This paper proposes a new approach for power electronic converters faults prognosis under-insulated gate bipolar transistor (IGBT) failures. Power electronic converters such as inverters and rectifiers are crucial parts of most renewable energy systems ...
Adla Ismail +3 more
semanticscholar +1 more source
This paper proposes a new approach for power electronic converters faults prognosis under-insulated gate bipolar transistor (IGBT) failures. Power electronic converters such as inverters and rectifiers are crucial parts of most renewable energy systems ...
Adla Ismail +3 more
semanticscholar +1 more source