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Series connection of insulated gate bipolar transistors (IGBTs)
2005 European Conference on Power Electronics and Applications, 2005R. Withanage, N. Shammas, S. Tennakoon
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High Power Insulated Gate Bipolar Transistors (IGBTs)
Extended Abstracts of the 1988 International Conference on Solid State Devices and Materials, 1988H. Ohashi, A. Nakagawa, M. Hideshima
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Insulated gate bipolar transistor (IGBT) simulation using IG-Spice
2014Master of ...
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Silicon Carbide (SiC) Insulated Gate Bipolar Transistors (IGBTs) for High Voltage Applications
The significant interest that SiC has attracted over the last decades, coupled with the ease of voltage control and low conduction losses of the IGBTs, have led to their development and sample fabrication. Although these devices demonstrated the advantages that SiC IGBTs can bring in High Voltage power applications, their characteristics are not yet ...openaire +2 more sources
Trench-gate insulated-gate bipolar transistors (IGBTs)
2020LEE MENG-CHIA +4 more
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Design and fabrication of insulated gate bipolar transistor (IGBT) using wafer bonding technology
2008With the enhanced performance of the novel Lateral IGBT can be proved through simulation, its fabrication remains a challenge. In this project, we investigated many different fabrication methodologies, and wafer bonding is found to be only viable choice.
Tan, Cher Ming., Tse, Man Siu.
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Methods of manufacture for trench-gate insulated-gate bipolar transistors (IGBTs)
2023LEE MENG-CHIA +4 more
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Vertical insulated gate bipolar transistor (IGBT) with two type control gates
2023KATO TAKAHIRO, SAKANO TATSUNORI
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