Results 201 to 210 of about 16,299 (241)

Impact of dormancy periods on power cycling of insulated gate bipolar transistors (IGBTS)

2016 IEEE Accelerated Stress Testing & Reliability Conference (ASTR), 2016
Power cycling is a testing method for power semiconductor devices wherein switching functions are simulated to generate heat and raise junction temperature instead of using a chamber. Failure analysis of devices following the test can provide valuable insight into the failure modes and mechanisms of power electronic devices. Most switching applications
Nathan Valentine, Diganta Das
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High accuracy SPICE behavioral macromodeling of insulated gate bipolar transistor (IGBT)

APEC '98 Thirteenth Annual Applied Power Electronics Conference and Exposition, 2002
This paper presents a new behavioral IGBT macromodel, that uses the enhanced capabilities of the nonlinear controlled sources implemented in modern SPICE like simulators. It describes the device's internal static equations directly with "in line equation" controlled sources and the nonlinear voltage dependent gate capacitances are piece-wise-linear ...
A. Maxim, D. Andreu, J. Boucher
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New Gate Driver for online adjustable switching behavior of Insulated Gate Bipolar Transistors (IGBTs)

2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe), 2019
This paper presents a new gate driver concept that allows an online, open-loop adjustment of the switching behavior of power semiconductors during operation. An inductive impedance instead of an ohmic impedance enables the required adjustable gate current and thus the desired gate voltage curve.
Stamer, Fabian, Liske, Andreas, Hiller, Marc   +2 more
openaire   +2 more sources

Analysis of non-punch through trench emitter insulated gate bipolar transistor (IGBT)

1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings, 2002
The modelling of steady-state characteristics in a trench emitter IGBT structure is presented. The semiconductor equations were solved in two dimensions with physical effects such as carrier-carrier scattering mobility, SRH and Auger recombination included.
L. Sabesan, P. Mawby, M. Towers, K. Board, P. Waind   +4 more
openaire   +1 more source

Analysis of the dynamic avalanche of punch through insulated gate bipolar transistor (PT-IGBT)

Solid-State Electronics, 2009
Abstract In the paper proposed here, we are studying the dynamic avalanche from experimental results first, dynamic avalanche is identified on a punch through insulated gate bipolar transistor (PT-IGBT) module 1200 V–300 A from Mitsubishi. Secondly, the phenomenon is analysed thanks to simple solid state devices equations.
Lefranc, Pierre, Planson, Dominique, Morel, Hervé, Bergogne, Dominique   +3 more
openaire   +3 more sources

Thermal and electrical evaluation of insulated gate bipolar transistor (IGBT) power modules

High Temperatures-High Pressures
The thermal reliability of two different high-power insulated gate bipolar transistor (IGBT) modules was studied under both conduction and switching regimes by experimental and numerical approaches. Indeed, the reliability of semiconductor devices is tightly linked to the junction temperatures reached in the IGBT, which is a function of the diode chips
Kelvin Chen, Robson F. S. Dias, Fernando P. Duda, Carolina P. Naveira-Cotta, Christopher P. Tostado, Rodrigo P. M. Moreira, Philippe R. d’Egmont   +6 more
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Zero voltage switching behavior of punchthrough and nonpunchthrough insulated gate bipolar transistors (IGBT's)

IEEE Transactions on Electron Devices, 1998
The switching performance of silicon (Si) punchthrough (PT) and a nonpunchthrough (NPT) insulated gate bipolar transistors (IGBT's) is compared under zero voltage switching (ZVS), both experimentally and using two-dimensional (2-D) device simulator. Extensive experimental results are obtained for both the devices under ZVS turn-on and turn-off, under a
S. Pendharkar, K. Shenai
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Improvement of the Safe Operating Area for P-Channel Insulated-Gate Bipolar Transistors (IGBTs)

Japanese Journal of Applied Physics, 1991
A p-channel insulated-gate bipolar transistor (IGBT), which is supposed to be useful for many applications especially for inverters, is developed. The SOA (safe operating area) of p-channel IGBTs is narrower than that of n-channel IGBTs because of the positive-feedback mechanism between a high rate of the avalanche multiplication of electrons and ...
Katsunori Ueno, Yasuyuki Hoshi, Noriyuki Iwamuro, Naoki Kumagai Naoki Kumagai, Osamu Hashimoto Osamu Hashimoto   +4 more
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Experimental-theoretical thermal and electrical analyses of insulated gate bipolar transistors (IGBT) power module

2017 16th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm), 2017
Applications of high-power insulated gate bipolar transistor (IGBT) modules include railway traction, motor drives, and hybrid electric vehicles. The reliability of these semiconductor devices is tightly linked to the operating junction temperatures of IGBT and diode chips present in them.
Philippe R. d'Egmont, Carolina P. Naveira-Cotta, Robson F. S. Dias, Christopher P. Tostado, Fernando P. Duda, Kelvin Chen   +5 more
openaire   +1 more source

Freewheeling Current-Based Sensorless Field-Oriented Control of Five-Phase Permanent Magnet Synchronous Motors Under Insulated Gate Bipolar Transistor Failures of a Single Phase

IEEE transactions on industrial electronics (1982. Print), 2022
B. Tian, M. Molinas, Q. An, Bo Zhou, Jiadan Wei   +4 more
semanticscholar   +1 more source