Results 221 to 230 of about 16,299 (241)

Simulation Study of an Injection Enhanced Insulated-Gate Bipolar Transistor With p-Base Schottky Contact

IEEE Transactions on Electron Devices, 2016
M. Jiang, Zheng John Shen
semanticscholar   +1 more source

Dielectric and partial discharge investigations on high power insulated gate bipolar transistor modules

IEEE transactions on dielectrics and electrical insulation, 2015
Saravanakumar Arumugam, S. Gorchakov, T. Schoenemann   +2 more
semanticscholar   +1 more source

Design and fabrication of insulated gate bipolar transistor (IGBT) using wafer bonding technology

2008
With the enhanced performance of the novel Lateral IGBT can be proved through simulation, its fabrication remains a challenge. In this project, we investigated many different fabrication methodologies, and wafer bonding is found to be only viable choice.
Tan, Cher Ming., Tse, Man Siu.
openaire   +1 more source

An Insulated-Gate Bipolar Transistor With a Collector Trench Electron Extraction Channel

IEEE Electron Device Letters, 2015
M. Jiang, Xin Yin, Zhikang Shuai, Jun Wang, Z. Shen   +4 more
semanticscholar   +1 more source

A 4500 V injection enhanced insulated gate bipolar transistor (IEGT) operating in a mode similar to a thyristor

Proceedings of IEEE International Electron Devices Meeting, 1993
M. Kitagawa, Ichiro Omura, S. Hasegawa, Tomoki Inoue, A. Nakagawa   +4 more
semanticscholar   +1 more source

A thermal model for insulated gate bipolar transistor module

IEEE transactions on power electronics, 2004
Zhaohui Luo, Hyungkeun Ahn, M. Nokali
semanticscholar   +1 more source

An analytical model for the steady-state and transient characteristics of the power insulated-gate bipolar transistor

, 1988
A. Hefner, D. Blackburn
semanticscholar   +1 more source

Turn-Off Time as an Early Indicator of Insulated Gate Bipolar Transistor Latch-up

IEEE transactions on power electronics, 2012
D. W. Brown, M. Abbas, A. Ginart, I. Ali, P. Kalgren, G. Vachtsevanos   +5 more
semanticscholar   +1 more source

Performance trade-off for the Insulated Gate Bipolar Transistor: Buffer layer versus base lifetime reduction

1986 17th Annual IEEE Power Electronics Specialists Conference, 1987
A. Hefner, D. Blackburn
semanticscholar   +1 more source

Insulated-Gate Bipolar Transistor Rectifiers: Why They Are Not Used in Traction Power Substations

IEEE Vehicular Technology Magazine, 2014
V. Gelman
semanticscholar   +1 more source