Results 211 to 220 of about 16,299 (241)

Simulation of transient turn-off characteristics of a trench emitter insulated gate bipolar transistor (IGBT)

Proceedings of International Conference on Microelectronics, 2002
The modelling of transient turn-off characteristics in an IGBT structure is presented. The semiconductor equations are solved in two dimensions with physical effects such as carrier-carrier scattering mobility and SRH and Auger recombination included. The I-V characteristics, turn-off behaviour and hole concentration have been investigated.
L. Sabesan, P. Mawby, M.S. Towers, K. Board, P. Waind   +4 more
openaire   +1 more source

An improved understanding for the transient operation of the power insulated gate bipolar transistor (IGBT)

20th Annual IEEE Power Electronics Specialists Conference, 1989
A. Hefner
semanticscholar   +1 more source

Series connection of insulated gate bipolar transistors (IGBTs)

2005 European Conference on Power Electronics and Applications, 2005
R. Withanage, N. Shammas, S. Tennakoon
openaire   +1 more source

High Power Insulated Gate Bipolar Transistors (IGBTs)

Extended Abstracts of the 1988 International Conference on Solid State Devices and Materials, 1988
H. Ohashi, A. Nakagawa, M. Hideshima
openaire   +1 more source

Insulated gate bipolar transistor (IGBT) simulation using IG-Spice

2014
Master of ...
openaire   +1 more source

Thermal Simulation of Switching Pulses in an Insulated Gate Bipolar Transistor (IGBT) Power Module

2015
Abstract : A simulation was performed to predict the thermal behavior of a commercial power module with silicon insulated gate bipolar transistors (IGBTs) during switching of multiple power pulses.
openaire   +1 more source

An analytical insulated-gate bipolar transistor (IGBT) model for steady-state and transient applications under all free-carrier injection conditions

, 1996
Y. Yue, J. Liou, I. Batarseh
semanticscholar   +1 more source

Lifetime Estimation of Insulated Gate Bipolar Transistor Modules Using Two-Step Bayesian Estimation

IEEE transactions on device and materials reliability, 2017
Yizhou Lu, A. Christou
semanticscholar   +1 more source

An Ultralow Loss Superjunction Reverse Blocking Insulated-Gate Bipolar Transistor With Shorted-Collector Trench

IEEE Electron Device Letters, 2016
K. Zhou, X. Luo, Linhua Huang, Qing Liu, T. Sun, Zhaoji Li, Bo Zhang   +6 more
semanticscholar   +1 more source

Simulation Study of a Thyristor Conduction-Insulated Gate Bipolar Transistor (TC-IGBT) With a p-n-p Base and an n-p-n Collector for Reducing Turn-Off Loss

IEEE Transactions on Electron Devices, 2020
Mengxuan Jiang, Longjiang Gao
exaly