Results 191 to 200 of about 16,299 (241)
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The Superjunction Insulated Gate Bipolar Transistor Optimization and Modeling
IEEE Transactions on Electron Devices, 2010Marina Antoniou +2 more
exaly +2 more sources
Expert systems with applications, 2019
This study focuses on the aging evaluation of Insulated gate bipolar transistor (IGBT) modules to ensure their stability during operation. An aging degree evaluation model is proposed based on whale optimization algorithm optimized extreme learning ...
Ling-ling Li +3 more
semanticscholar +1 more source
This study focuses on the aging evaluation of Insulated gate bipolar transistor (IGBT) modules to ensure their stability during operation. An aging degree evaluation model is proposed based on whale optimization algorithm optimized extreme learning ...
Ling-ling Li +3 more
semanticscholar +1 more source
Radiation Displacement Defect in SuperJunction Insulated Gate Bipolar Transistor (SJ-IGBT)
2021 IEEE Region 10 Symposium (TENSYMP), 2021In this work, we report the impact of displacement defect due to radiation effect in the superjunction insulated gate bipolar transistor (SJ-IGBT). Simulations on its DC characteristics, breakdown voltage and power dissipation are carried out via technology computer-aided design (TCAD) simulation.
Gyeongyeop Lee +2 more
openaire +1 more source
A Bipolar "Command Charge" Pulser for Lasers with Insulated Gate Bipolar Transistors (IGBT's)
Twentieth Conference Record on Power Modulator Symposium, 20051. Abstract The design approach and practical results on a 2 joule, 26 kV, 6,5kHz pulser, using IGBT's as primary switches, are reported. These switches are arranged in a conventional inverter bridge configuration. A voltage step-up pulse transformer, with high voltage secondary capacitor, serves as load.
G.L. Bredenkamp, J.J. Nel, D.J. Mulder
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Identification of failure precursor parameters for Insulated Gate Bipolar Transistors (IGBTs)
2008 International Conference on Prognostics and Health Management, 2008Insulated Gate Bipolar Transistors (IGBTs) are used in applications such as the switching of automobile and train traction motors, high voltage power supplies, and in aerospace applications such as switch mode power supplies (SMPS) to regulate DC voltage.
Nishad Patil +3 more
openaire +1 more source
Materials Science Forum, 2005
In this paper, the performance of high-voltage (10kV) 4H-SiC n- and p-channel IGBTs and n-channel MOS-Gated Bipolar Transistor (MGT) are investigated and compared using 2- dimensional numerical simulations. We have found that the MGT in SiC is not suitable for applications at high blocking voltages and the p-channel IGBT is a better choice because of a
Lin Zhu, S. Balachandran, T.P. Chow
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In this paper, the performance of high-voltage (10kV) 4H-SiC n- and p-channel IGBTs and n-channel MOS-Gated Bipolar Transistor (MGT) are investigated and compared using 2- dimensional numerical simulations. We have found that the MGT in SiC is not suitable for applications at high blocking voltages and the p-channel IGBT is a better choice because of a
Lin Zhu, S. Balachandran, T.P. Chow
openaire +1 more source
Modern insulated gate bipolar transistor (IGBT) gate driving methods for robustness and reliability
2020This chapter has presented an overview of state-of-the-art advanced gate driver techniques for enhancing the reliability of IGBT modules. Broadly speaking, methods can be classified in detection methods, optimization methods, and protection methods. Additionally, optimization and protection methods can be roughly classified in simple (and cheap) and ...
Luo, Haoze +2 more
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1.2 kV trench insulated gate bipolar transistors (IGBT's) with ultralow on-resistance
IEEE Electron Device Letters, 1999In this letter, we report the full development of 1.2 kV Trench IGBT's with ultralow on-resistance, latch-up free operation and highly superior overall performance when compared to state of the art IGBT's. The minimum forward voltage drop at the standard current density of 100 A/cm/sup 2/ was 1.1 V for nonirradiated devices and 2.1 V for irradiated ...
F. Udrea +6 more
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Silicon IGBT (Insulated Gate Bipolar Transistor)
2011The silicon IGBT is arguably the most successful innovation in power semiconductor devices during the past three-decades. By using a combination of bipolar current flow controlled using an MOS-gate structure, the power gain was increased a million fold when compared with existing power bipolar junction transistors and power MOSFET structures with high ...
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