Results 11 to 20 of about 251,703 (265)

A High Precision On-Line Detection Method for IGBT Junction Temperature Based on Stepwise Regression Algorithm

open access: yesIEEE Access, 2020
The insulated gate bipolar transistor (IGBT), one of the most vulnerable component, is one of the most precious central component in the converter interior.
Lingfeng Shao, Yi Hu, Guoqing Xu
doaj   +1 more source

Tunnel-Junction Thermometry Down to Millikelvin Temperatures [PDF]

open access: yesPhysical Review Applied, 2015
9 pages, 6 ...
Casparis, L.   +9 more
openaire   +5 more sources

Influence of Parasitic Elements and Operating Conditions of Semiconductor Switches on Power Losses and the Junction Temperature of These Switches

open access: yesEnergies, 2023
This article presents the results of computer analysis of selected switching networks. In these analyses, the influence of selected parasitic components of electronic switches on the total and active power losses in these switches is considered. Analyses
Krzysztof Górecki
doaj   +1 more source

Resistance of Josephson-junction arrays at low temperatures [PDF]

open access: yesPhysical Review B, 1998
24 pages, LaTeX references added, to appear in ...
Ioffe, L. B., Narozhny, B. N.
openaire   +2 more sources

Nonparametric Model-Based Online Junction Temperature and State-of-Health Estimation for Insulated Gate Bipolar Transistors

open access: yesIEEE Access, 2021
Insulated gate bipolar transistor (IGBT) is widely used in power equipment, it generally works in complex circuit profiles and it is very difficult to measure or predict the thermal parameters of the module in real-time and evaluate the corresponding ...
Xiangxiang Liu   +4 more
doaj   +1 more source

Magnetic Tunnel Junction as an On-Chip Temperature Sensor [PDF]

open access: yesScientific Reports, 2017
AbstractTemperature sensors are becoming an increasingly important component in System-on-Chip (SoC) designs with increasing transistor scaling, power density and associated heating effects. This work explores a compact nanoelectronic temperature sensor based on a Magnetic Tunnel Junction (MTJ) structure. The MTJ switches probabilistically depending on
Sengupta, Abhronil   +3 more
openaire   +2 more sources

Least Squares Method for Identification of IGBT Thermal Impedance Networks Using Direct Temperature Measurements

open access: yesEnergies, 2020
State-of-the-art methods for determining thermal impedance networks for IGBT (Insulated Gate Bipolar Transistor) modules usually involves the establishment of the relationship between the measured transistor or diode voltage and temperature under ...
Humphrey Mokom Njawah Achiri   +3 more
doaj   +1 more source

Online Short-Circuit Protection Strategy of an Electric Powerpack for Electric Oil Pump Applications

open access: yesIEEE Access, 2021
With the trend towards the miniaturisation and electrification of automotive components, the electric oil pump (EOP) is generally designed as an integrated powerpack in which a motor and an electronic control unit (ECU) are combined into an integrated ...
Youngwoo Noh, Wonkyu Kim, Ju Lee
doaj   +1 more source

Exciton-polariton Josephson junctions at finite temperatures [PDF]

open access: yesScientific Reports, 2017
AbstractWe consider finite temperature effects in a non-standard Bose-Hubbard model for an exciton- polariton Josephson junction (JJ) that is characterised by complicated potential energy landscapes (PEL) consisting of sets of barriers and wells. We show that the transition between thermal activation (classical) and tunneling (quantum) regimes exhibits
M. E. Lebedev   +5 more
openaire   +2 more sources

Junction Temperature Measurement in Optically-Controlled Power Mosfet

open access: yesProceedings of the 9th International Conference on Photonics, Optics and Laser Technology, 2021
The temperature-dependent optical properties of silicon carbide (SiC), such as refractive index and reflectivity, have been used for a direct monitoring of the junction temperature of a power MOSFET. In particular, the optical response of a 4H-SiC MOSFET-integrated Fabry-Perot cavity to temperature changes has been investigated through parametric ...
Rao S.   +4 more
openaire   +3 more sources

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