Results 11 to 20 of about 611,519 (305)

A Junction Temperature Prediction Method Based on Multivariate Linear Regression Using Current Fall Characteristics of SiC MOSFETs [PDF]

Sensors
The junction temperature (Tj) is a key parameter reflecting the thermal behavior of Silicon carbide (SiC) MOSFETs and is essential for condition monitoring and reliability assessment in power electronic systems.
Haihong Qin, Yang Zhang, Yu Zeng, Yuan Kang, Ziyue Zhu, Fan Wu   +5 more
doaj   +2 more sources

Monitoring Junction Temperature of RF MOSFET under Its Working Condition Using Fiber Bragg Grating [PDF]

Micromachines, 2022
When a high-power radio frequency (RF) metal oxide semiconductor field effect transistor (MOSFET) works in low-efficiency situations, considerable power is dissipated into heat, resulting in an excessive junction temperature and a likely failure. In this
Zhenmin Liu, Na Chen, Yong Liu, Zhenyi Chen, Fufei Pang, Tingyun Wang   +5 more
doaj   +2 more sources

LED Junction Temperature Measurement: From Steady State to Transient State [PDF]

Sensors
In this review, we meticulously analyze and consolidate various techniques used for measuring the junction temperature of light-emitting diodes (LEDs) by examining recent advancements in the field as reported in the literature.
Xinyu Zhao, Honglin Gong, Lihong Zhu, Zhenyao Zheng, Yijun Lu   +4 more
doaj   +2 more sources

Junction temperature prediction method of GaN HEMT power devices based on accurate on-voltage testing

Energy Reports, 2023
Compared with Si devices, GaN HEMT has lower on-resistance, lower junction capacitance, higher switching frequency, higher switching speed and higher junction temperature capability. It is widely used in automotive, aerospace and other fields.
Haihong Qin, Jiangjin Peng, Zimo Zhang, Fanghua Zhang, Xu Zhao, Zhenxiang Xu   +5 more
doaj   +1 more source

Room-temperature single-electron junction. [PDF]

Proceedings of the National Academy of Sciences, 1996
The design, realization, and test performances of an electronic junction based on single-electron phenomena that works in the air at room temperature are hereby reported. The element consists of an electrochemically etched sharp tungsten stylus over whose tip a nanometer-size crystal was synthesized.
Facci P, Erokhin V, Carrara S, Nicolini C   +3 more
openaire   +4 more sources

Indirect Thermographic Temperature Measurement of a Power-Rectifying Diode Die Based on a Heat Sink Thermogram

Energies, 2022
This article concerns the indirect thermographic measurement of the junction temperature of a D00-250-10 semiconductor diode. Herein, we show how the temperature of the semiconductor junction was estimated on the basis of the heat sink temperature.
Krzysztof Dziarski, Arkadiusz Hulewicz, Łukasz Drużyński, Grzegorz Dombek   +3 more
doaj   +1 more source

Thermal Performance of LED Filament in Flip-Chip Packaging Manufactured for Different Correlated Color Temperature

Applied Sciences, 2021
The effect of correlated color temperature (CCT) on the thermal performance of light emitting diode (LED) filament in flip-chip packaging was investigated in detail.
He Jiang, Jiming Sa, Cong Fan, Yiwen Zhou, Hanwen Gu, Xuezhou Yang, Xiaofeng Su, Zhushanying Zhang   +7 more
doaj   +1 more source

Tunnel-Junction Thermometry Down to Millikelvin Temperatures [PDF]

Physical Review Applied, 2015
9 pages, 6 ...
Casparis, L., Khaymovich, Ivan, Maradan, D., Saira, Olli-Pentti, Palma, M., Meschke, M., Pekola, Jukka, Zumbühl, D.M., Feshchenko, Anna   +9 more
openaire   +5 more sources

Influence of Parasitic Elements and Operating Conditions of Semiconductor Switches on Power Losses and the Junction Temperature of These Switches

Energies, 2023
This article presents the results of computer analysis of selected switching networks. In these analyses, the influence of selected parasitic components of electronic switches on the total and active power losses in these switches is considered. Analyses
Krzysztof Górecki
doaj   +1 more source

Nonparametric Model-Based Online Junction Temperature and State-of-Health Estimation for Insulated Gate Bipolar Transistors

IEEE Access, 2021
Insulated gate bipolar transistor (IGBT) is widely used in power equipment, it generally works in complex circuit profiles and it is very difficult to measure or predict the thermal parameters of the module in real-time and evaluate the corresponding ...
Xiangxiang Liu, Tianlei Jiao, Diganta Das, Ijaz Haider Naqvi, Michael Pecht   +4 more
doaj   +1 more source