Results 31 to 40 of about 7,414 (228)
Adjoint method for the optimization of insulated gate bipolar transistors
AIP Advances, 2019 A mathematical algorithm is presented for the computation of optimum doping profiles that maximize the breakdown voltage and on-state current in insulated gate bipolar transistors (IGBT).
C. Zhu, P. Andrei
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Solidifying Power Electronics [Historical] [PDF]
, 2018 More than one century ago, in 1902, American engineer Peter Cooper Hewitt (1861\u20131921) derived the mercury arc-rectifier, enclosed in a glass bulb, from his mercury-vapor lamp of the previous year.
Guarnieri, Massimo
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Employment Of IGBT-Transistors For Bipolar Impulsed Micro-Arc Oxidation
Transport and Telecommunication, 2015 The paper is devoted to the use of insulated gate bipolar transistors (IGBT) for the micro-arc oxidation (MAO) process. The technical requirements to the current switches of power supplies for the pulsed bipolar MAO technology have been developed.
Krainyukov Alexander, Kutev Valery
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Real-Time HIL Emulation of DRM With Machine Learning Accelerated WBG Device Models
IEEE Open Journal of Power Electronics, 2023 The proliferation of artificial intelligence (AI) has opened up new avenues for the modeling of power electronics with ultra-fast transient responses, such as wide-bandgap (WBG) devices.
Songyang Zhang +2 more
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A Fault-Tolerant T-Type Multilevel Inverter Topology With Increased Overload Capability and Soft-Switching Characteristics [PDF]
, 2017 he performance of a novel three-phase four-leg fault-tolerant T-type inverter topology is introduced in this paper. This inverter topology provides a fault-tolerant solution to any open-circuit and certain short-circuit switching faults in the power ...
Demerdash, Nabeel +4 more
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Investigation of FACTS devices to improve power quality in distribution networks [PDF]
, 2011 Flexible AC transmission system (FACTS) technologies are power electronic solutions that improve power transmission through enhanced power transfer volume and stability, and resolve quality and reliability issues in distribution networks carrying ...
Rehman Shaikh, Muhammad Asim +1 more
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GA-LSTM-Based Degradation Prediction for IGBTs in Power Electronic Systems
EnergiesThe reliability and lifetime of insulated gate bipolar transistors (IGBTs) are critical to ensuring the stability and safety of power electronic systems.
Yunfeng Qiu, Zehong Li, Shan Tian
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Micromachines, 2020 As the need for green and effective utilization of energy continues to grow, the advancements in the energy and power electronics industry are constantly driven by this need, as both industries are intertwined for obvious reasons. The developments in the
Immanuel N. Jiya, Rupert Gouws
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Failure precursors for insulated gate bipolar transistors (IGBTs) [PDF]
9th International Seminar on Power Semiconductors (ISPS 2008), 2008 Failure precursors indicate changes in a measured variable that can be associated with impending failure. By identifying precursors to failure and by monitoring them, system failures can be predicted and actions can be taken to mitigate their effects. In this study, three potential failure precursor candidates, threshold voltage, transconductance, and ...
N. Patil, D. Das, K. Goebel, M. Pecht
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High-power active devices [PDF]
, 2006 Very high-power (HP) electronics represents a small part of the electronics market. In semiconductor terms, HP represents a world device market of 600 million euros out of a total 200 billion euros for all semiconductors—a mere 0.3 per cent. At the multi-
Carroll, E
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