Study on Total Ionize Dose Irradiation Damages of Silicon Epitaxial Planar NPN Bipolar Transistor
Yuanzineng kexue jishu, 2022 In this paper, the total ionize dose (TID) irradiations for NPN bipolar transistors were carried out by 60Co γ rays. Obvious degradations were observed after irradiation, which are manifested as the increase of base current and the decrease of current ...
PENG Chao;LEI Zhifeng;ZHANG Hong;ZHANG Zhangang;HE Yujuan
doaj
Radiation Effects in CMOS Isolation Oxides: Differences and Similarities With Thermal Oxides [PDF]
, 2013 Radiation effects in thick isolation oxides of modern CMOS technologies are investigated using dedicated test structures designed using two commercial foundries.
Estribeau, Magali +7 more
core +3 more sources
Strain-Based Room-Temperature Non-Volatile MoTe$_2$ Ferroelectric Phase Change Transistor
, 2019 The primary mechanism of operation of almost all transistors today relies on electric-field effect in a semiconducting channel to tune its conductivity from the conducting 'on'-state to a non-conducting 'off'-state.
Askari, Hesam +7 more
core +1 more source
Evaluation of Low Dose Rate Sensitivity in Discrete Bipolar Junction Transistors [PDF]
We evaluate the low dose rate sensitivity in several families of discrete bipolar transistors across device parameter, quality assurance level, and irradiation bias configuration.
Chen, Dakai +7 more
core +1 more source
High-gain AlGaAs/GaAs double heterojunction Darlington phototransistors for optical neural networks [PDF]
, 1991 High-gain MOCVD-grown (metal-organic chemical vapor deposition) AlGaAs/GaAs/AlGaAs n-p-n double heterojunction bipolar transistors (DHBTs) and Darlington phototransistor pairs are provided for use in optical neural networks and other optoelectronic ...
Kim, Jae H., Lin, Steven H.
core +1 more source
Designing analog circuits in CMOS [PDF]
, 2004 The evolution in CMOS technology dictated by Moore's Law is clearly beneficial for designers of digital circuits, but it presents difficult challenges, such as lowered nominal supply voltages, for their peers in the analog world who want to keep pace ...
Annema, Anne-Johan +3 more
core +1 more source
Study on the Switching Time-Variation of Simultaneously Controlled IGBT: Case of Defibrillators Design [PDF]
Bioautomation, 2009 Samples of integrated gain bipolar transistors (IGBT) of the same type but produced under different technologies were tested about the switching time-variation.
Mudrov T., Kostov J.
doaj
High-performance flexible BiCMOS electronics based on single-crystal Si nanomembrane
npj Flexible Electronics, 2017 Electronics: Microfabrication enables integrated silicon-based thin-film transistors Semiconductor-based thin-film electronics is an emerging field in modern electronics due to the advance in mechanical flexibility, yet the fabrication that is currently ...
Jung-Hun Seo +4 more
doaj +1 more source
Nature and Characteristics of a Voltage-Biased Varistor and its Embedded Transistor
IEEE Journal of the Electron Devices Society, 2015 An unorthodox approach for producing simple and yet practical transistors based on ceramic platforms is discussed in this paper. To achieve this, we modify the original nonlinear current-voltage (I-V) characteristics of a varistor by superimposing a ...
Raghvendra K. Pandey +2 more
doaj +1 more source
Employment Of IGBT-Transistors For Bipolar Impulsed Micro-Arc Oxidation
Transport and Telecommunication, 2015 The paper is devoted to the use of insulated gate bipolar transistors (IGBT) for the micro-arc oxidation (MAO) process. The technical requirements to the current switches of power supplies for the pulsed bipolar MAO technology have been developed.
Krainyukov Alexander, Kutev Valery
doaj +1 more source