Results 31 to 40 of about 34,434 (253)
Hardening electronic devices against very high total dose radiation environments [PDF]
, 1972 The possibilities and limitations of hardening silicon semiconductor devices to the high neutron and gamma radiation levels and greater than 10 to the eighth power rads required for the NERVA nuclear engine development are discussed. A comparison is made
Buchanan, B. +3 more
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Ion bipolar junction transistors [PDF]
Proceedings of the National Academy of Sciences, 2010 Dynamic control of chemical microenvironments is essential for continued development in numerous fields of life sciences. Such control could be achieved with active chemical circuits for delivery of ions and biomolecules. As the basis for such circuitry, we report a solid-state ion bipolar junction transistor (IBJT) based on conducting polymers and ...
Tybrandt, Klas +3 more
openaire +3 more sources
ASEAN Journal on Science and Technology for Development, 2017 An Investigation of the Effects of Emitter Pre-Deposition Temperature in Double-Diffued Polysilicon Emitter Bipolar ...
E.F Chor, C.P Chen, L.S Tan
doaj +1 more source
A Breakdown Voltage Multiplier for High Voltage Swing Drivers [PDF]
, 2007 A novel breakdown voltage (BV) multiplier is introduced that makes it possible to generate high output voltage swings using transistors with low breakdown voltages. The timing analysis of the stage is used to optimize its dynamic response.
Hajimiri, Ali, Mandegaran, Sam
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Adaptive us-mrac for disturbance cancellation [PDF]
, 1995 A variable structure, model reference adaptive control (VS-MRAC) devoted to cancel interferences without the requirement of an auxiliary input is proposed.
Bertran Albertí, Eduardo +1 more
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Доклады Белорусского государственного университета информатики и радиоэлектроники, 2022 When evaluating the individual reliability of semiconductor devices by gradual failures for a given operating time, the value of the electrical parameter of a particular instance for this operating time is predicted using the simulation method. To obtain
V. O. Kaziuchyts +3 more
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Very wide range tunable CMOS/bipolar current mirrors with voltage clamped input [PDF]
, 1999 In low power current mode signal processing circuits it is often necessary to use current mirrors to replicate and amplify/attenuate current signals and clamp the voltage of nodes with high parasitic capacitances so that the smallest currents do not ...
Andreou, Andreas G. +2 more
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Cascoded Active Quencher for SPADs With Bipolar Differential Amplifier in 0.35 μm BiCMOS
IEEE Photonics Journal, 2022 Fast active quenching of single-photon avalanche diodes (SPADs) is important to reduce the afterpulsing probability (APP). An option to reduce the reaction time of electronics to a SPAD's avalanche is to design a quencher exploiting bipolar ...
Bernhard Goll +2 more
doaj +1 more source
A Novel Low Dynamic Resistance Dual-Directional SCR With High Holding Voltage for 12 V Applications
IEEE Journal of the Electron Devices Society, 2020 The excellent area efficiency of dual-directional SCRs (DDSCRs) have made them desirable for low-voltage and high-voltage applications. However, to implement the required symmetrical structure, conventional DDSCRs have to lengthen their ESD discharge ...
Kyoung-Il Do, Yong-Seo Koo
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Hyperchaotic Self-Oscillations of Two-Stage Class C Amplifier With Generalized Transistors
IEEE Access, 2021 This paper yields process of development, numerical analysis, lumped circuit modeling, and experimental verification of a new hyperchaotic oscillator based on the fundamental topology of two-stage amplifier.
Jiri Petrzela
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