Results 1 to 10 of about 40,359 (249)
Direct measurement of the carrier leakage in an InGaAsP/InP laser [PDF]
, 1983 Carrier leakage over the heterobarrier in an InGaAsP/InP laser is measured directly in a laser-bipolar-transistor structure.
Chen, T. R. +6 more
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IEEE Journal of the Electron Devices Society, 2020 In this article, a novel bipolar-field-effect composite power transistor, called SiC GCBT (Silicon Carbide Gate-Controlled Bipolar-field-effect Composite Transistor) is presented and studied.
Yipan Zhang, Baoxing Duan, Yintang Yang
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IEEE Journal of the Electron Devices Society, 2021 4H-SiC is a wide-bandgap material that exhibits excellent high-temperature conductivity and high operating voltage. These characteristics can provide high electrostatic discharge (ESD) robustness in high voltage applications. However, a considerably wide
Kyoung-Il Do +3 more
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Journal of Engineering, 2021 The research aims to design a narrow-band frequency drive amplifier (1.5GHz -1.6GHz), which is used to boost the transmitter amplifier's input signal or amplify the GPS, GlONASS signals at the L1 band.
ABDO zouhair Ballouk +2 more
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International Journal of Advances in Telecommunications, Electrotechnics, Signals and Systems, 2012 This paper presents a new active building block (ABB) called voltage gain-controlled modified current feedback amplifier (VGC-MCFOA) based on bipolar junction transistor technology.
Norbert Herencsar +4 more
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Investigating student understanding of bipolar junction transistor circuits
Physical Review Physics Education Research, 2018 The research reported in this article represents a systematic, multiyear investigation of student understanding of the behavior of bipolar junction transistor circuits using a variety of different tasks to isolate and probe key aspects of transistor ...
Kevin L. Van De Bogart +1 more
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Приборы и методы измерений, 2019 Controlling of parameters of manufactured transistors and interoperational controlling during their production are necessary conditions for production of competitive products of electronic industry.
N. I. Gorbachuk +3 more
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Very wide range tunable CMOS/bipolar current mirrors with voltage clamped input [PDF]
, 1999 In low power current mode signal processing circuits it is often necessary to use current mirrors to replicate and amplify/attenuate current signals and clamp the voltage of nodes with high parasitic capacitances so that the smallest currents do not ...
Andreou, Andreas G. +2 more
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DEVELOPMENT OF CONTROLLED RECTIFIERS BASED ON THE BIPOLAR WITH STATIC INDUCTION TRANSISTORS (BSIT)
Вестник Дагестанского государственного технического университета: Технические науки, 2016 Aim. The aim of this study is to develop one of the most perspective semiconductor device suitable for creation and improvement of controlled rectifiers, bipolar static induction transistor.Methods.
F. I. Bukashev, A. R. Shakhmaeva
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Hardening electronic devices against very high total dose radiation environments [PDF]
, 1972 The possibilities and limitations of hardening silicon semiconductor devices to the high neutron and gamma radiation levels and greater than 10 to the eighth power rads required for the NERVA nuclear engine development are discussed. A comparison is made
Buchanan, B. +3 more
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