Results 21 to 30 of about 34,434 (253)
Recent developments in monolithic integration of InGaAsP/InP optoelectronic devices [PDF]
, 1982 Monolithically integrated optoelectronic circuits combine optical devices such as light sources (injection lasers and light emitting diodes) and optical detectors with solid-state semiconductor devices such as field effect transistors, bipolar ...
Bar-Chaim, Nadav +7 more
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Фізика і хімія твердого тіла, 2016 Reducing the size of silicon devices is accompanied by an increase in the effective rate of electrons, decrease transit time and the transition to a ballistic work. Power consumption is reduced too. Formation of large integrated circuits structures on Si-
S. P. Novosyadlyy, A. M. Bosats'kyy
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Доклады Белорусского государственного университета информатики и радиоэлектроники, 2020 Individual forecasting of the reliability of semiconductor devices, taking into account gradual failures, is an urgent task, as it allows you to choose highly reliable instances for critical electronic devices of long-term functioning.
S. M. Borovikov +3 more
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Приборы и методы измерений, 2019 Controlling of parameters of manufactured transistors and interoperational controlling during their production are necessary conditions for production of competitive products of electronic industry.
N. I. Gorbachuk +3 more
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The Cryogenic Temperature Behavior of Bipolar, MOS, and DTMOS Transistors in Standard CMOS
IEEE Journal of the Electron Devices Society, 2018 Both CMOS bandgap voltage references and temperature sensors rely on the temperature behavior of either CMOS substrate BJTs or MOS transistors in weak inversion.
Harald Homulle +3 more
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Electricity, 2021 The object of this research was a self-resonated inverter, based on paralleled Insulated-Gate Bipolar Transistors (IGBTs), for high-frequency induction heating equipment, operating in a wide range of output powers, applicable for research and industrial ...
Borislav Dimitrov +3 more
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Silicon-based distributed voltage-controlled oscillators [PDF]
, 2001 Distributed voltage-controlled oscillators (DVCOs) are presented as a new approach to the design of silicon VCOs at microwave frequencies. In this paper, the operation of distributed oscillators is analyzed and the general oscillation condition is ...
Hajimiri, Ali, Wu, Hui
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Formation of MOS-transistors with isolation of active elements by oxiden porous silicon [PDF]
Технологія та конструювання в електронній апаратурі, 2009 Ultrathin functional layers of MOS transistors require high-quality isolation of active elements. A new method for forming epitaxial structures for silicon-on-insulator technology based on porous silicon is proposed.
S. P. Novosyadlyi, V. M. Vivcharuk
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Heterostructure unipolar spin transistors [PDF]
, 2004 We extend the analogy between charge-based bipolar semiconductor electronics and spin-based unipolar electronics by considering unipolar spin transistors with different equilibrium spin splittings in the emitter, base, and collector.
G. Vignale +3 more
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Micromachines, 2020 As the need for green and effective utilization of energy continues to grow, the advancements in the energy and power electronics industry are constantly driven by this need, as both industries are intertwined for obvious reasons. The developments in the
Immanuel N. Jiya, Rupert Gouws
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