Results 41 to 50 of about 34,434 (253)

Damage Effect of Single and Sequential Neutron/γ Irradiation on Bipolar Device

Yuanzineng kexue jishu
Bipolar transistors are widely used in electronic circuits and serve as core components in various devices. In the complex radiation environments, electronic circuits are exposed to more than one type of radiation particle.
XING Jiabin1, WANG Kai2, CAO Fei1, YANG Jianqun2, QIN Jianqiang1
doaj   +1 more source

Temperature dependence of breakdown and avalanche multiplication in In0.53Ga0.47As diodes and heterojunction bipolar transistors [PDF]

, 2003
The avalanche multiplication and impact ionization coefficients in In/sub 0.53/Ga/sub 0.47/As p-i-n and n-i-p diodes over a range of temperature from 20-400 K were measured and shown to have negative temperature dependence.
David, J.P.R., Houston, P.A., Krysa, A., Ng, W.K., Tan, C.H., Yee, M.   +5 more
core   +1 more source

A power sharing series power BJT array with isolated low voltage control for AC power control applications [PDF]

, 2006
A technique for a continuously variable AC resistance using a series BJT array is presented. This array provides high power dissipation capability and uniform voltage and power distribution across the individual transistors. The array, controlled using a
Cho, Paul, Kularatna, Nihal
core   +2 more sources

Emergence of Plasma Photonics

IEEE Photonics Journal, 2011
The past several years have witnessed the emergence of a subfield of photonics in which the unique optical and electronic properties of microplasmas and gases are coupled with solid phase materials and optical components to realize photodetectors ...
J. G. Eden
doaj   +1 more source

Bipolar spintronics: From spin injection to spin-controlled logic

, 2007
An impressive success of spintronic applications has been typically realized in metal-based structures which utilize magnetoresistive effects for substantial improvements in the performance of computer hard drives and magnetic random access memories ...
Ansermet J-P, Ashcroft N W, Bychkov Y A, Chen P Moser J Kotissek P Sadowski J Zenger M Weiss D Wegscheider W, Dennis C L, Dietl T, Dietl T, Dzhioev R I, Dzhioev R I, Fabian J, Fabian J Žutić I Das Sarma S, Ganichev S D, Hartman U, Hirota E, Igor Žutić, Janik E, Jansen R, Jaroslav Fabian, Jonker B T, Jonker B T, Jungwirth T Sinova J Masek J Kucera J MacDonald A H, Maekawa S, Maekawa S, Maekawa S, Meier F, Petukhov A G Smelyankiy V N Osipov V V, Rashba E I, Schmidt G, Shockley W, Silsbee R H, Steven C Erwin, Sze S M, Tiwari S, Weisbuch C, Winkler R, Yamauchi T, Žutić I, Žutić I Petukhov A Erwin S C   +37 more
core   +1 more source

CMOS OTA-C high-frequency sinusoidal oscillators [PDF]

, 1991
Several topology families are given to implement practical CMOS sinusoidal oscillators by using operational transconductance amplifier-capacitor (OTA-C) techniques. Design techniques are proposed taking into account the CMOS OTA's dominant nonidealities.
Huertas Díaz, José Luis, Linares Barranco, Bernabé, Rodríguez Vázquez, Ángel Benito, Sánchez Sinencio, Edgar   +3 more
core   +1 more source

Multi-mode kernel principal component analysis–based incipient fault detection for pulse width modulated inverter of China Railway High-speed 5

Advances in Mechanical Engineering, 2017
This article deals with incipient fault of insulated-gate bipolar transistors to improve the safety of traction systems of China Railway High-speed 5. Combining with the pulse width modulated strategy which makes signals variate periodically, the multi ...
Hongtian Chen, Bin Jiang, Ningyun Lu, Zehui Mao   +3 more
doaj   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

A Perspective on Symmetric Lateral Bipolar Transistors on SOI as a Complementary Bipolar Logic Technology

IEEE Journal of the Electron Devices Society, 2015
Recently published reports suggest that symmetric lateral bipolar transistors on semiconductor-on-insulator (SOI) is CMOS compatible in fabrication process, and can be much denser than CMOS due to their much larger (5-10× larger) drive-current ...
Tak H. Ning, Jin Cai
doaj   +1 more source

Method and apparatus for increasing resistance of bipolar buried layer integrated circuit devices to single-event upsets [PDF]

, 1991
Bipolar transistors fabricated in separate buried layers of an integrated circuit chip are electrically isolated with a built-in potential barrier established by doping the buried layer with a polarity opposite doping in the chip substrate.
Zoutendyk, John A.
core   +1 more source