Results 61 to 70 of about 34,434 (253)
Research progress of THz solid state amplifier
Dianzi Jishu Yingyong, 2019 With the development of semiconductor technology, characteristic frequency of transistors have been improving so far and into THz frequency range, which makes it possible for solid state devices to work in THz frequency range.
Guo Fangjin +5 more
doaj +1 more source
Bioinspired Adaptive Sensors: A Review on Current Developments in Theory and Application
Advanced Materials, EarlyView.This review comprehensively summarizes the recent progress in the design and fabrication of sensory‐adaptation‐inspired devices and highlights their valuable applications in electronic skin, wearable electronics, and machine vision. The existing challenges and future directions are addressed in aspects such as device performance optimization ...
Guodong Gong +12 more
wiley +1 more source
Фізика і хімія твердого тіла, 2017 This paper analyzes performance of bipolar transistors based on AlGaAs/GaAs heterostructures (HBT). Use of heterojunction as emitter junction allows radical improvement of its performance.
S. P. Novosyadlyj, S. I. Boyko
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Miniature electrometer preamplifier effectively compensates for input capacitance [PDF]
, 1966 Negative capacitance preamplifier using a dual MOS /Metal Oxide Silicon/ transistor in conjunction with bipolar transistors is used with intracellular microelectrodes in recording bioelectric potentials.
Burrous, C. N., De~boo, G. J.
core +1 more source
Matched wideband low-noise amplifiers for radio astronomy [PDF]
, 2009 Two packaged low noise amplifiers for the 0.3–4 GHz frequency range are described. The amplifiers can be operated at temperatures of 300–4 K and achieve noise temperatures in the 5 K range (
Bardin, J. +3 more
core +1 more source
Role of the Recombination Zone in Organic Light‐Emitting Devices
Advanced Materials, EarlyView.This review summarizes the critical role of the recombination zone in organic light‐emitting diodes (OLEDs). We highlight that broadening the recombination zone in OLEDs based on emissive layers with balanced charge transport and high photoluminescence quantum yields provides a promising route toward achieving both long operational lifetime and high ...
Yungui Li, Karl Leo
wiley +1 more source
A Perspective on SOI Symmetric Lateral Bipolar Transistors for Ultra-Low-Power Systems
IEEE Journal of the Electron Devices Society, 2016 The reasons why state-of-the-art vertical bipolar circuits dissipate very high power are explained. The recent advent of SOI symmetric lateral bipolar transistors invites us to rethink bipolar as a high-speed but low-power technology.
Tak H. Ning
doaj +1 more source
Advanced Materials, EarlyView.A fully flexible ion‐gel‐gated graphene‐channel transistor driven by a triboelectric nanogenerator enables self‐powered tactile sensing and synaptic learning. Mimicking spike‐rate‐dependent plasticity, the device exhibits frequency‐selective potentiation and depression, supporting rate‐coded neuromorphic computation even under flex.
Hanseong Cho +3 more
wiley +1 more source
Bipolar Nb3Cl8 Field Effect Transistors
MagnetochemistryField effect transistors based on few-layered van der Waals transition metal halide (TMH) Nb3Cl8 are studied in this work. Few-layered Nb3Cl8 exhibits typical N-type semiconducting behavior controlled by a Si gate, with the electrical signal enhancing as
Yixiang Lu +3 more
doaj +1 more source
Elektronika ir Elektrotechnika, 2023 This paper deals with the design, implementation, and measurements of a frequency converter with bipolar sinusoidal pulse width modulation (SPWM) of output voltage for two-phase induction motors.
Jan Kanuch +3 more
doaj +1 more source