Results 71 to 80 of about 34,434 (253)

Asymmetric gate induced drain leakage and body leakage in vertical MOSFETs with reduced parasitic capacitance

open access: yes, 2006
Vertical MOSFETs, unlike conventional planar MOSFETs, do not have identical structures at the source and drain, but have very different gate overlaps and geometric configurations.
Ashburn, P.   +6 more
core   +1 more source

Controlling ion transport through nanopores: modeling transistor behavior [PDF]

open access: yes, 2018
We present a modeling study of a nanopore-based transistor computed by a mean-field continuum theory (Poisson-Nernst-Planck, PNP) and a hybrid method including particle simulation (Local Equilibrium Monte Carlo, LEMC) that is able to take ionic ...
Boda, Dezső   +4 more
core   +2 more sources

New‐Era Polymer Thermoelectrics: Material Innovations, Doping Frontiers, Decoupling Strategies, and Unconventional Applications

open access: yesAdvanced Materials, EarlyView.
The field of polymer thermoelectrics is entering a new era, featuring breakthroughs in addressing the conventional performance disparity between p‐type and n‐type polymers, pioneering doping frontiers, and sophisticated decoupling strategies. This review explores innovations in molecular design and superior stabilities, bridging the gap from ...
Suhao Wang
wiley   +1 more source

Low-power integrated-circuit driver for ferrite-memory word lines [PDF]

open access: yes, 1970
Composite circuit uses both n-p-n bipolar and p-channel MOS transistors /BIMOS/. The BIMOS driver provides 1/ ease of integrated circuit construction, 2/ low standby power consumption, 3/ bidirectional current pulses, and 4/ current-pulse amplitudes and ...
Katz, S.
core   +1 more source

Neuromorphic Electronics for Intelligence Everywhere: Emerging Devices, Flexible Platforms, and Scalable System Architectures

open access: yesAdvanced Materials, EarlyView.
The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj   +8 more
wiley   +1 more source

Phase Engineering of Nanomaterials (PEN): Evolution, Current Challenges, and Future Opportunities

open access: yesAdvanced Materials, EarlyView.
This review summarizes the synthesis, phase transition, advanced characterization spanning ex situ to in situ and operando techniques, and diverse applications of phase engineering of nanomaterials (PEN). It further outlines key challenges and future opportunities, such as phase stability, architecture control, and artificial intelligence (AI)‐driven ...
Ye Chen   +7 more
wiley   +1 more source

Neutron and proton tests of different technologies for the upgrade of the cold readout electronics of the ATLAS Hadronic End-cap Calorimeter

open access: yes, 2011
The expected increase of total integrated luminosity by a factor ten at the HL-LHC compared to the design goals for LHC essentially eliminates the safety factor for radiation hardness realized at the current cold amplifiers of the ATLAS Hadronic End-cap ...
Nagel, Martin
core   +2 more sources

Bioelectrical Interfaces Beyond Excitable Cells: Cancer, Aging, and Gene Expression Modulation

open access: yesAdvanced Materials Interfaces, EarlyView.
ABSTRACT The investigation of biological conductivity has evolved from its classical foundation based on ionic fluxes underpinning cardiac and neuronal excitability to a multifaceted regulator of cellular physiology. Traditional approaches for probing electrical events in living matter focused largely on action potentials recording.
Paolo Cadinu   +14 more
wiley   +1 more source

High-Frequency Characteristics of InGaP/GaAs Double Heterojunction Bipolar Transistor Epitaxially Grown on 200 mm Ge/Si Wafers

open access: yesIEEE Journal of the Electron Devices Society, 2020
N-p-n InGaP/GaAs double heterojunction bipolar transistor has been successfully grown on a 200 mm Ge/Si wafer using metalorganic chemical vapor deposition with low defect density of 107 cm-2.
Loke Wan Khai   +11 more
doaj   +1 more source

CMOS optical-sensor array with high output current levels and automatic signal-range centring [PDF]

open access: yes, 1994
A CMOS compatible photosensor with high output current levels, and an area-efficient scheme for automatic signal-range centring according to illumination conditions are presented.
Carmona Galán, Ricardo   +3 more
core   +1 more source

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