Results 91 to 100 of about 34,434 (253)
Advances and Perspectives in Graphene‐Based Quantum Dots Enabled Neuromorphic Devices
Advanced Science, EarlyView.Graphene‐based QDs are zero‐dimensional carbon nanomaterials with pronounced quantum confinement and tunable electronic structures. Herein, we summarize their synthesis strategies and functionalization methods, and highlight their functional roles and operating mechanisms in devices, as well as recent advances in neuromorphic electronics. We anticipate
Yulin Zhen +9 more
wiley +1 more source
Memristive Physical Reservoir Computing
Advanced Science, EarlyView.Memristors’ nonlinear dynamics and input‐dependent memory effects make them ideal candidates for high‐performance physical reservoir computing (RC). Based on their conductance modulation, memristors can be classified as electronic or optoelectronic types.
Dian Jiao +9 more
wiley +1 more source
Advanced Science, EarlyView.Bi2O2Se/Bi2O5Se bilayer heterostructure exhibits reversible structural evolution during device operation, directly revealed by atomic‐scale investigation. Oxygen vacancy redistribution governs filament formation and rupture, enabling stable multilevel resistive switching and synaptic‐like behaviors.
Yen‐Jung Chen +8 more
wiley +1 more source
High-Temperature Bipolar-Mode Operation of Normally-Off Diamond JFET
IEEE Journal of the Electron Devices Society, 2017 High temperature characteristics of bipolar-mode operation of normally-off diamond junction field-effect transistors were investigated up to 573 K. As an important factor, the current gain depending on the gate current was analyzed with a theoretical ...
Takayuki Iwasaki +6 more
doaj +1 more source
Paralleling insulated-gate bipolar transistors in the H-bridge structure to reduce current stress. [PDF]
SN Appl Sci, 2021 Memarian Sorkhabi M +3 more
europepmc +1 more source
High‐Yield Fabrication of Electrolyte‐Gated Transistors Based on Graphene Acetic Acid
Advanced Electronic Materials, EarlyView.We fabricated a liquid‐gated transistor based on graphene acetic acid, which is dielectrophoretically deposited, featuring a spatial resolution down to 10 microns. Our method enables a versatile and reproducible fabrication featuring state‐of‐the‐art performance.
Georgian Giani Ilie +13 more
wiley +1 more source
A Modified Bipolar Translinear Cell with Improved Linear Range and Its Applications [PDF]
, 2012 This paper presents a technique to extend the linear input voltage range of a sinh mixed translinear cell proposed by Fabre [1]. This technique extends the linear operation range of the circuit by inserting common-anode-connected pairs into the mixed ...
Kiranon, W. +4 more
core +1 more source
RRAM Variability Harvesting for CIM‐Integrated TRNG
Advanced Electronic Materials, EarlyView.This work demonstrates a compute‐in‐memory‐compatible true random number generator that harvests intrinsic cycle‐to‐cycle variability from a 1T1R RRAM array. Parallel entropy extraction enables high‐throughput bit generation without dedicated circuits. This approach achieves NIST‐compliant randomness and low per‐bit energy, offering a scalable hardware
Ankit Bende +4 more
wiley +1 more source
IEEE Journal of the Electron Devices Society, 2018 Symmetric lateral NPN bipolar junction transistors on Si-on-insulator having epitaxially grown emitter/collector regions are demonstrated, for the first time.
Pouya Hashemi +4 more
doaj +1 more source
A 2.4-GHz, 2.2-W, 2-V fully-integrated CMOS circular-geometry active-transformer power amplifier [PDF]
, 2001 A 2.4-GHz, 2.2-W, 2-V fully integrated circular geometry power amplifier with 50 Ω input and output matching is fabricated using 2.5V, 0.35 pm CMOS transistors. It can also produce 450mW using a 1V supply. Harmonic suppression is 64dB or better.
Aoki, Ichiro +3 more
core