Results 111 to 120 of about 34,434 (253)

Electronic system for high power load control [PDF]

, 1980
Parallel current paths are divided into two groups, with control devices in the current paths of one group each having a current limiting resistor, and the control devices in the other group each having no limiting resistor, so that when the control ...
Miller, E. L.
core   +1 more source

Illuminating the Intracellular World: Breakthroughs in Nanoscale Optoelectronics

Advanced Electronic Materials, EarlyView.
This perspective explores optoelectronic biointerfaces spanning macroscale flexible devices to nanoscale intracellular systems, emphasizing their integration across dimensions. It examines capacitive, Faradaic, and photothermal mechanisms that enable light‐driven control of cellular activity and highlights key material and design challenges in ...
Tania Assaf, Menahem Y. Rotenberg
wiley   +1 more source

Investigation of Analog Memristor Characteristics for Hardware Synaptic Weight in Multilayer Neural Network

Advanced Intelligent Systems, Volume 7, Issue 3, March 2025.
The systematic design of memristor‐based neural network is provided by analog conductance state parameters to accurately emulate the software‐based high‐resolution weight at discrete device level. The requirement of discrete analog conductance of memristor device is measured as ≈50 states with nonlinearity value of ≈0.142 within the deviation range of ...
Jingon Jang, Yoonseok Song, Sungjun Park
wiley   +1 more source

Laser-induced local activation of Mg-doped GaN with a high lateral resolution for high power vertical devices

AIP Advances, 2018
A method for laser-induced local p-type activation of an as-grown Mg-doped GaN sample with a high lateral resolution is developed for realizing high power vertical devices for the first time. As-grown Mg-doped GaN is converted to p-type GaN in a confined
Noriko Kurose, Kota Matsumoto, Fumihiko Yamada, Teuku Muhammad Roffi, Itaru Kamiya, Naotaka Iwata, Yoshinobu Aoyagi   +6 more
doaj   +1 more source

A Flexible and Energy‐Efficient Compute‐in‐Memory Accelerator for Kolmogorov–Arnold Networks

Advanced Intelligent Systems, EarlyView.
This article presents KA‐CIM, a compute‐in‐memory accelerator for Kolmogorov–Arnold Networks (KANs). It enables flexible and efficient computation of arbitrary nonlinear functions through cross‐layer co‐optimization from algorithm to device. KA‐CIM surpasses CPU, ASIC, VMM‐CIM, and prior KAN accelerators by 1–3 orders of magnitude in energy‐delay ...
Chirag Sudarshan, Oliver Artner, Paul‐Philipp Manea, Sebastian Siegel, Susanne Hoffmann‐Eifert, Regina Dittmann, John Paul Strachan   +6 more
wiley   +1 more source

Gate Drive Circuit for Noninsulating Gate GaN-Transistors Enabling Fast Switching and High-Frequency Operation

IEEE Open Journal of Industry Applications
Increasing requirements for high switching frequency and high power density have driven the development of gallium nitride power transistors. Among them, some GaN transistors feature a noninsulating gate, such as gate injection transistors and Schottky ...
Xiaomeng Geng, Carsten Kuring, Benedikt Kohlhepp, Oliver Hilt, Sibylle Dieckerhoff   +4 more
doaj   +1 more source

Electroencephalogram‐Driven Recognition of Parkinson's Disease Through a Mycelium‐Inspired Memristive Reservoir Computing Circuit

Advanced Intelligent Systems, EarlyView.
This work presents a bio‐inspired computing framework for Parkinson's disease analog recognition using electroencephalogram signals. Temporally encoded EEG features stimulate a mycelium‐inspired memristive reservoir, where disease‐related patterns emerge through physical spatiotemporal dynamics.
Ioannis K. Chatzipaschalis, Ioannis Tompris, Pantelis Fraidakis, Iosif‐Angelos Fyrigos, Antonio Rubio, Georgios Ch. Sirakoulis   +5 more
wiley   +1 more source

Characterization and Modeling of SH in Multi-Finger RF LDMOS Transistors Using BSIM-BULK Model

IEEE Journal of the Electron Devices Society
In this work, we present self-heating (SH) characterization and modeling of 130 nm Bipolar-CMOS-DMOS (BCD) technology node multi-finger Laterally Diffused Metal-Oxide-Semiconductor (LDMOS) transistors using extensive DC and S-parameter ...
Ayushi Sharma, Shivendra Singh Parihar, Anirban Kar, Weike Wang, Kimihiko Imura, Yogesh Singh Chauhan   +5 more
doaj   +1 more source

5,12‐TIPS‐Substitution of Tetracene: Effects on Redox Potentials and Cyclic Voltammetric Behavior in CH2Cl2 and THF1

Chemistry – A European Journal, EarlyView.
Tetracene and bis(tri(isopropyl)silylethynyl)tetracene (TIPS‐tetracene) exhibit characteristic similarities and differences in their electrochemical redox behavior depending on the base solvent of the electrolyte. Analysis of cyclic voltammograms allows the quantification of substituent and solvent effects and the calculation of an “electrochemical gap.
Holger F. Bettinger, Simon Schundelmeier, Bernd Speiser   +2 more
wiley   +1 more source

Lead‐free inorganic halide perovskite‐based synaptic memory for next generation neuromorphic computing

InfoMat, EarlyView.
Lead‐free inorganic halide perovskites enable resistive switching synaptic devices capable of mimicking biological learning and multimodal information processing, offering a promising platform for next‐generation neuromorphic computing and artificial intelligence hardware. Abstract Inorganic halide perovskites (IHPs) have emerged as promising materials
Subhasish Chanda, Deepak Kumar, Iman Biswas, Manisha Sharma, Youngmin Lee, Sejoon Lee, Sanjeev Kumar Sharma, Aniruddha Mondal   +7 more
wiley   +1 more source