Results 131 to 140 of about 34,434 (253)
Advanced Functional Materials, Volume 36, Issue 36, 4 May 2026.Ultrathin 2D indium oxide memtransistors are reproducibly fabricated via a scalable liquid‐metal‐printing process under ambient, low‐temperature conditions. The devices achieve robust, gate‐tunable bipolar memristive switching with high switching ratios at a BEOL‐compatible maximum processing temperature of 300°C. Governed by trap‐controlled transport,
Sanghyun Moon +6 more
wiley +1 more source
High Gain Graphene Based Hot Electron Transistor with Record High Saturated Output Current Density
Advanced Electronic MaterialsHot electron transistors (HETs) represent an exciting new device for integration into semiconductor technology, holding the promise of high‐frequency electronics beyond the limits of SiGe bipolar hetero transistors.
Carsten Strobel +9 more
doaj +1 more source
The Role of Ionic Liquids at the Biological Interfaces in Bioelectronics
Advanced Science, Volume 13, Issue 26, 8 May 2026.Ionic liquids (ILs) are highlighted as key artificial ionic materials that bridge biological ion‐based signaling and electronic devices. By understanding their composition, structure, function relationships, and mechanisms, ILs can advance from high performance electrolyte to core materials enabling integrated, multifunctional bioelectronics for ...
Yeong‐sinn Ye +5 more
wiley +1 more source
Irradiate-anneal screening of total dose effects in semiconductor devices [PDF]
An extensive investigation of irradiate-anneal (IRAN) screening against total dose radiation effects was carried out as part of a program to harden the Mariner Jupiter/Saturn 1977 (MJS'77) spacecraft to survive the Jupiter radiation belts.
Price, W. E., Stanley, A. G.
core +1 more source
From Supramolecular Order to Device Performance in Langmuir–Blodgett and Langmuir–Schaefer Films
ChemNanoMat, Volume 12, Issue 5, May 2026.This review delves into the theoretical fundamentals and key methods for the electrical and electrochemical characterization of Langmuir–Blodgett (LB) and Langmuir–Schaefer (LS) films, with a particular emphasis on the precise nanostructuring control these techniques offer. By analyzing a selection of influential studies—ranging from early foundational
Maria Luisa Braunger +6 more
wiley +1 more source
Hippocampus, Volume 36, Issue 3, May 2026.ABSTRACT The importance of precise timing of neuronal activity, relative to ongoing slower oscillations, is reshaping the engram theory and our understanding of how memories are encoded and stored. The hippocampal theta‐wave phase‐encoding of neuronal firing predicts behavioral outcomes and cognitive performance in memory tasks.
Paula Gonçalves Vieira Teixeira +3 more
wiley +1 more source
InfoMat, Volume 8, Issue 5, May 2026.Single‐domain Si‐doped β‐Ga2O3 thin films grown on off‐axis sapphire eliminate domain boundaries, improving transport and photogating. Gate‐pulse modulation suppresses persistent photoconductivity, yielding ultrafast response and high detectivity. Integrated into a 24 × 24 array, the devices enable high frame rate DUV imaging and energy‐efficient ...
Jae Young Kim +9 more
wiley +1 more source
Artificial sensory and motor nervous systems enabled by bioinspired nanowire heterostructure synapse
InfoMat, Volume 8, Issue 5, May 2026.A p‐i‐n heterostructured junction synaptic transistor was fabricated, composed of poly(3‐hexylthiophene‐2,5‐diyl) nanowire thin‐film/poly(methyl methacrylate)/ZnO nanowires (PZJ STs), which can emulate biological sensory and motor nervous systems.
Lu Yang +7 more
wiley +1 more source
ChemistryOpen, Volume 15, Issue 5, May 2026.This review summarizes recent advances in the synthesis and processing of carbon nanotubes and carbon nanocomposites, highlighting structure–property relationships and their applications in energy storage, biomedical systems, and environmental technologies, with emphasis on performance optimization and sustainable material design.
Noor‐ul‐Huda Altaf +9 more
wiley +1 more source
CMOS array design automation techniques [PDF]
The design considerations and the circuit development for a 4096-bit CMOS SOS ROM chip, the ATL078 are described. Organization of the ATL078 is 512 words by 8 bits.
Feller, A., Lombardi, T.
core +1 more source