Overview of the Properties and Formation Process of Interface Traps in MOS and Linear Bipolar Devices. [PDF]
Micromachines (Basel)Ren Y, Zhu M, Dai X, Li L, Liu M.
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Breaking the p-type doping barrier in β-Ga<sub>2</sub>O<sub>3</sub>: a GaN-based heterojunction bipolar transistor with high gain, high breakdown, and RF capability. [PDF]
RSC AdvThan PH, Than TQ, Takaki Y.
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Research on Radiation-Hardened RCC Isolated Power Supply for High-Radiation-Field Applications. [PDF]
Micromachines (Basel)Lu X +7 more
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A DTMOS-Based Memristor Emulator Circuit for Low-Power Biomedical Signal Conditioning. [PDF]
Micromachines (Basel)Barraj I.
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Highly Efficient Conductivity Modulation via Stacked Multi-Gate Graphene Ambipolar Transistors. [PDF]
Nanomaterials (Basel)Nie C +5 more
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Role of the channel on the memory window of HfZrO<sub>x</sub> ferroelectric field-effect transistors with p-type Si-doped InZnO<sub>x</sub> channel. [PDF]
Sci RepPark H, Lim S, Lee S, Lee JW, Woo J.
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Design of a Bandgap Reference Circuit for MEMS Integrated Accelerometers. [PDF]
Micromachines (Basel)Zhang W +5 more
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Computing-in-memory architecture for Kolmogorov-Arnold networks based on tunable Gaussian-like memory cells. [PDF]
Nat CommunWen Z +10 more
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Special Issue: 2D Layered Nanomaterials and Heterostructures for Electronics, Optoelectronics, and Sensing. [PDF]
Nanomaterials (Basel)Giannazzo F +3 more
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A 3.0-V, High-Precision, High-PSRR BGR with High-Order Compensation and Improved FVF Pre-Regulation. [PDF]
Micromachines (Basel)Shen Y +7 more
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