Simulation of Interference‐Enhanced Raman Amplification for Advanced Microelectronic Applications
This work presents an open‐source tool modeling interference‐enhanced Raman intensities in any multilayered structures. Depending on the stack and laser source, constructive interferences can be exploited to improve strain or composition measurement.
D. Monteil +9 more
wiley +1 more source
Investigation of Device- and Circuit-Level Reliability of Inverse-Mode Silicon-Germanium Heterojunction Bipolar Transistors. [PDF]
Kim T +5 more
europepmc +1 more source
Highly biomimetic spiking neuron using SiGe heterojunction bipolar transistors for energy-efficient neuromorphic systems. [PDF]
Kim Y, Kim H, Oh K, Park JH, Baek CK.
europepmc +1 more source
An Overview on Formation of Radiation-Induced Interface Traps in Silicon-Based Devices. [PDF]
Dai X, Zhu M, Wu F, Ren Y, Liu M.
europepmc +1 more source
Mobility of Carriers in Strong Inversion Layers Associated with Threshold Voltage for Gated Transistors. [PDF]
Yang HC +4 more
europepmc +1 more source
Polarity-dependent ferroelectric modulations in two-dimensional hybrid perovskite heterojunction transistors. [PDF]
Li E +9 more
europepmc +1 more source
An x-band slow-wave T/R switch in 0.25-μm SiGe BiCMOS [PDF]
Dinç, Tolga +2 more
core +1 more source
SPICE Model for SiC Bipolar Transistor and TTL Inverter Degradation Due to Gamma Radiation. [PDF]
Metreveli A, Hallén A, Zetterling CM.
europepmc +1 more source
Optimizing Energy/Current Fluctuation of RF-Powered Secure Adiabatic Logic for IoT Devices. [PDF]
Ribeiro BF, Takahashi Y.
europepmc +1 more source
Physical echo state network based on the nonlinearity and dynamic response of ambipolar heterostructure transistors. [PDF]
Zhong WM +8 more
europepmc +1 more source

